Photoluminescence properties of Te doped AlGaAsSb alloys

• Autor(a) principal: Toginho Filho,D. O.
• Data de Publicação: 2005
• Outros Autores: Dias,I. F. L., Duarte,J. L., Laureto,E., Harmand,Jean C.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Brazilian Journal of Physics
• Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332005000600015

A detailed study of the photoluminescence properties in undoped and Te-doped AlGaAsSb alloys lattice matched to InP is presented. Photoluminescent temperature and excitation intensity dependences are employed to discuss the origin of the dominant transition and the influence of the presence of Al and Te on the fluctuation of the electrostatic potential in the epitaxial layers. The behavior of PL dominant transitions is associated with the quasi-donor-acceptor-pair (QDAP) model at a low temperature interval. The temperature dependence of photoluminescence intensities showed characteristics similar to those observed for amorphous semiconductors and disordered superlattices. The presence of two V elements, or the presence of Sb in the ternary and quaternary (III)-III-V-V alloys, causes a reduction in photoluminescence intensity temperature dependence, when compared to (III)-III-III-V alloys.