Effects of in-plane magnetic fields on the electronic cyclotron effective mass and Landé factor in GaAs-(Ga,Al)As quantum wells

• Autor(a) principal: Reyes-Gómez,E.
• Data de Publicação: 2006
• Outros Autores: Perdomo Leiva,C. A., Oliveira,L. E., Dios-Leyva,M. de
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Brazilian Journal of Physics
• Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600016
• topic: Magnetic fields; Quantum wells; g-factor; Cyclotron effective mass

The dependence of the electron Landé g-factor on carrier confinement in quantum wells recently gained both experimental and theoretical interest. The g factor of electrons in GaAs-(Ga,Al)As quantum wells is of special interest, as it changes its sign at a certain value of the well width. In the present work, the effects of an in-plane magnetic field on the cyclotron effective mass and on the Landé g<FONT FACE=Symbol>^</FONT>-factor in single GaAs-(Ga,Al)As quantum wells are studied. Theoretical calculations are performed in the framework of the effective-mass and non-parabolic-band approximations. The Ogg-McCombe Hamiltonian is used for the conduction-band electrons in the semiconductor heterostructure, and the Landé g<FONT FACE=Symbol>^</FONT>-factor theoretically evaluated is found in good agrement with available experimental measurements.