Electron mobility in nitride materials

Detalhes bibliográficos
Autor(a) principal: Rodrigues,Clóves G.
Data de Publicação: 2002
Outros Autores: Freire,Valder N., Vasconcellos,Áurea R., Luzzi,Roberto
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200056
Resumo: We contribute here a theoretical study of the electron mobility in n-doped GaN, InN, and AlN at moderate to high electric fields. We solve the set of coupled nonlinear integro-differential equations of evolution to obtain the steady-state values of the basic intensive nonequilibrium thermodynamic variables for the three materials. The regions with ohmic and non-ohmic behavior in the electron drift velocity dependence on the electric field strength are characterized in the three nitrides. The electron mobility is calculated, and it is shown that the larger corresponds to InN, and the smaller to AlN.
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spelling Electron mobility in nitride materialsWe contribute here a theoretical study of the electron mobility in n-doped GaN, InN, and AlN at moderate to high electric fields. We solve the set of coupled nonlinear integro-differential equations of evolution to obtain the steady-state values of the basic intensive nonequilibrium thermodynamic variables for the three materials. The regions with ohmic and non-ohmic behavior in the electron drift velocity dependence on the electric field strength are characterized in the three nitrides. The electron mobility is calculated, and it is shown that the larger corresponds to InN, and the smaller to AlN.Sociedade Brasileira de Física2002-06-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200056Brazilian Journal of Physics v.32 n.2a 2002reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332002000200056info:eu-repo/semantics/openAccessRodrigues,Clóves G.Freire,Valder N.Vasconcellos,Áurea R.Luzzi,Robertoeng2002-11-26T00:00:00Zoai:scielo:S0103-97332002000200056Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2002-11-26T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Electron mobility in nitride materials
title Electron mobility in nitride materials
spellingShingle Electron mobility in nitride materials
Rodrigues,Clóves G.
title_short Electron mobility in nitride materials
title_full Electron mobility in nitride materials
title_fullStr Electron mobility in nitride materials
title_full_unstemmed Electron mobility in nitride materials
title_sort Electron mobility in nitride materials
author Rodrigues,Clóves G.
author_facet Rodrigues,Clóves G.
Freire,Valder N.
Vasconcellos,Áurea R.
Luzzi,Roberto
author_role author
author2 Freire,Valder N.
Vasconcellos,Áurea R.
Luzzi,Roberto
author2_role author
author
author
dc.contributor.author.fl_str_mv Rodrigues,Clóves G.
Freire,Valder N.
Vasconcellos,Áurea R.
Luzzi,Roberto
description We contribute here a theoretical study of the electron mobility in n-doped GaN, InN, and AlN at moderate to high electric fields. We solve the set of coupled nonlinear integro-differential equations of evolution to obtain the steady-state values of the basic intensive nonequilibrium thermodynamic variables for the three materials. The regions with ohmic and non-ohmic behavior in the electron drift velocity dependence on the electric field strength are characterized in the three nitrides. The electron mobility is calculated, and it is shown that the larger corresponds to InN, and the smaller to AlN.
publishDate 2002
dc.date.none.fl_str_mv 2002-06-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200056
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200056
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97332002000200056
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.32 n.2a 2002
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
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