Improved electronic structure and optical properties of sp-hybridized semiconductors using LDA+U SIC
Autor(a) principal: | |
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Data de Publicação: | 2006 |
Outros Autores: | |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Brazilian Journal of Physics |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300014 |
Resumo: | We propose the local density approximation (LDA) plus an on-site Coulomb self-interaction-like correction (SIC) potential for describing sp-hybridized bonds in semiconductors and insulators. We motivate the present LDA+U SIC scheme by comparing the exact exchange (EXX) hole with the LDA exchange hole. The LDA+U SIC method yields good band-gap energies Eg and dielectric constants epsilon(omega ~ 0) of Si, Ge, GaAs, and ZnSe. We also show that LDA consistently underestimates the gamma-point effective electron m c and light-hole m lh masses, and the underlying reason for this is a too strong light-hole-electron coupling within LDA. The advantages of the LDA+U SIC approach are a computational time of the same order as the ordinary LDA, the orbital dependent LDA+U SIC exchange-correlation interaction is asymmetric analogously to the EXX potential, and the method can be used for materials and compounds involving localized d- and f-orbitals. |
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Brazilian Journal of Physics |
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Improved electronic structure and optical properties of sp-hybridized semiconductors using LDA+U SICElectronic structureOptical propertiesLDA+U SICWe propose the local density approximation (LDA) plus an on-site Coulomb self-interaction-like correction (SIC) potential for describing sp-hybridized bonds in semiconductors and insulators. We motivate the present LDA+U SIC scheme by comparing the exact exchange (EXX) hole with the LDA exchange hole. The LDA+U SIC method yields good band-gap energies Eg and dielectric constants epsilon(omega ~ 0) of Si, Ge, GaAs, and ZnSe. We also show that LDA consistently underestimates the gamma-point effective electron m c and light-hole m lh masses, and the underlying reason for this is a too strong light-hole-electron coupling within LDA. The advantages of the LDA+U SIC approach are a computational time of the same order as the ordinary LDA, the orbital dependent LDA+U SIC exchange-correlation interaction is asymmetric analogously to the EXX potential, and the method can be used for materials and compounds involving localized d- and f-orbitals.Sociedade Brasileira de Física2006-06-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300014Brazilian Journal of Physics v.36 n.2a 2006reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332006000300014info:eu-repo/semantics/openAccessPersson,ClasMirbt,Susanneeng2006-07-06T00:00:00Zoai:scielo:S0103-97332006000300014Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2006-07-06T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false |
dc.title.none.fl_str_mv |
Improved electronic structure and optical properties of sp-hybridized semiconductors using LDA+U SIC |
title |
Improved electronic structure and optical properties of sp-hybridized semiconductors using LDA+U SIC |
spellingShingle |
Improved electronic structure and optical properties of sp-hybridized semiconductors using LDA+U SIC Persson,Clas Electronic structure Optical properties LDA+U SIC |
title_short |
Improved electronic structure and optical properties of sp-hybridized semiconductors using LDA+U SIC |
title_full |
Improved electronic structure and optical properties of sp-hybridized semiconductors using LDA+U SIC |
title_fullStr |
Improved electronic structure and optical properties of sp-hybridized semiconductors using LDA+U SIC |
title_full_unstemmed |
Improved electronic structure and optical properties of sp-hybridized semiconductors using LDA+U SIC |
title_sort |
Improved electronic structure and optical properties of sp-hybridized semiconductors using LDA+U SIC |
author |
Persson,Clas |
author_facet |
Persson,Clas Mirbt,Susanne |
author_role |
author |
author2 |
Mirbt,Susanne |
author2_role |
author |
dc.contributor.author.fl_str_mv |
Persson,Clas Mirbt,Susanne |
dc.subject.por.fl_str_mv |
Electronic structure Optical properties LDA+U SIC |
topic |
Electronic structure Optical properties LDA+U SIC |
description |
We propose the local density approximation (LDA) plus an on-site Coulomb self-interaction-like correction (SIC) potential for describing sp-hybridized bonds in semiconductors and insulators. We motivate the present LDA+U SIC scheme by comparing the exact exchange (EXX) hole with the LDA exchange hole. The LDA+U SIC method yields good band-gap energies Eg and dielectric constants epsilon(omega ~ 0) of Si, Ge, GaAs, and ZnSe. We also show that LDA consistently underestimates the gamma-point effective electron m c and light-hole m lh masses, and the underlying reason for this is a too strong light-hole-electron coupling within LDA. The advantages of the LDA+U SIC approach are a computational time of the same order as the ordinary LDA, the orbital dependent LDA+U SIC exchange-correlation interaction is asymmetric analogously to the EXX potential, and the method can be used for materials and compounds involving localized d- and f-orbitals. |
publishDate |
2006 |
dc.date.none.fl_str_mv |
2006-06-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300014 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300014 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/S0103-97332006000300014 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
dc.source.none.fl_str_mv |
Brazilian Journal of Physics v.36 n.2a 2006 reponame:Brazilian Journal of Physics instname:Sociedade Brasileira de Física (SBF) instacron:SBF |
instname_str |
Sociedade Brasileira de Física (SBF) |
instacron_str |
SBF |
institution |
SBF |
reponame_str |
Brazilian Journal of Physics |
collection |
Brazilian Journal of Physics |
repository.name.fl_str_mv |
Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF) |
repository.mail.fl_str_mv |
sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br |
_version_ |
1754734862684651520 |