Physical properties of CdS/ITO thin films growth by CBD technique with substrate oscillating agitation

Detalhes bibliográficos
Autor(a) principal: Salazar,Y. A.
Data de Publicação: 2006
Outros Autores: Patiño,R., Peña,J. L., Cauich,W., Oliva,A.I.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600069
Resumo: Cadmium sulphide (CdS) thin films deposited on indium tin oxide (ITO) substrates were prepared by chemical bath deposition technique by using different conditions to agitate the bath and the substrate. For substrate, an oscillating device working at 37 Hz was adapted to support each ITO substrate in order to agitate the substrate during deposition, meanwhile the chemical solution is heated and/not agitated. The deposited films were characterized on their morphology, on the band gap energy, and on thickness. The implemented novel technique for substrate oscillation has shown to improve the films quality, by the chemical bath without colloidal precipitates and by the clean film surfaces obtained. CdS films with variable deposition time can be achieved depending on the agitating technique. The mean band gap energy obtained around 2.41 eV is similar to the typical value reported in the literature for this material. In addition, by oscillating only the substrate during deposition is possible to obtain clean films and avoid the formation of colloidal precipitates on the chemical bath, normally presented when it is magnetically or ultrasonically agitated.
id SBF-2_c532501f874e6bb57a3fdaff93f5d726
oai_identifier_str oai:scielo:S0103-97332006000600069
network_acronym_str SBF-2
network_name_str Brazilian Journal of Physics
repository_id_str
spelling Physical properties of CdS/ITO thin films growth by CBD technique with substrate oscillating agitationCadmium sulphideChemical bath depositionOscillating agitationCadmium sulphide (CdS) thin films deposited on indium tin oxide (ITO) substrates were prepared by chemical bath deposition technique by using different conditions to agitate the bath and the substrate. For substrate, an oscillating device working at 37 Hz was adapted to support each ITO substrate in order to agitate the substrate during deposition, meanwhile the chemical solution is heated and/not agitated. The deposited films were characterized on their morphology, on the band gap energy, and on thickness. The implemented novel technique for substrate oscillation has shown to improve the films quality, by the chemical bath without colloidal precipitates and by the clean film surfaces obtained. CdS films with variable deposition time can be achieved depending on the agitating technique. The mean band gap energy obtained around 2.41 eV is similar to the typical value reported in the literature for this material. In addition, by oscillating only the substrate during deposition is possible to obtain clean films and avoid the formation of colloidal precipitates on the chemical bath, normally presented when it is magnetically or ultrasonically agitated.Sociedade Brasileira de Física2006-09-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600069Brazilian Journal of Physics v.36 n.3b 2006reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332006000600069info:eu-repo/semantics/openAccessSalazar,Y. A.Patiño,R.Peña,J. L.Cauich,W.Oliva,A.I.eng2006-11-29T00:00:00Zoai:scielo:S0103-97332006000600069Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2006-11-29T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Physical properties of CdS/ITO thin films growth by CBD technique with substrate oscillating agitation
title Physical properties of CdS/ITO thin films growth by CBD technique with substrate oscillating agitation
spellingShingle Physical properties of CdS/ITO thin films growth by CBD technique with substrate oscillating agitation
Salazar,Y. A.
Cadmium sulphide
Chemical bath deposition
Oscillating agitation
title_short Physical properties of CdS/ITO thin films growth by CBD technique with substrate oscillating agitation
title_full Physical properties of CdS/ITO thin films growth by CBD technique with substrate oscillating agitation
title_fullStr Physical properties of CdS/ITO thin films growth by CBD technique with substrate oscillating agitation
title_full_unstemmed Physical properties of CdS/ITO thin films growth by CBD technique with substrate oscillating agitation
title_sort Physical properties of CdS/ITO thin films growth by CBD technique with substrate oscillating agitation
author Salazar,Y. A.
author_facet Salazar,Y. A.
Patiño,R.
Peña,J. L.
Cauich,W.
Oliva,A.I.
author_role author
author2 Patiño,R.
Peña,J. L.
Cauich,W.
Oliva,A.I.
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Salazar,Y. A.
Patiño,R.
Peña,J. L.
Cauich,W.
Oliva,A.I.
dc.subject.por.fl_str_mv Cadmium sulphide
Chemical bath deposition
Oscillating agitation
topic Cadmium sulphide
Chemical bath deposition
Oscillating agitation
description Cadmium sulphide (CdS) thin films deposited on indium tin oxide (ITO) substrates were prepared by chemical bath deposition technique by using different conditions to agitate the bath and the substrate. For substrate, an oscillating device working at 37 Hz was adapted to support each ITO substrate in order to agitate the substrate during deposition, meanwhile the chemical solution is heated and/not agitated. The deposited films were characterized on their morphology, on the band gap energy, and on thickness. The implemented novel technique for substrate oscillation has shown to improve the films quality, by the chemical bath without colloidal precipitates and by the clean film surfaces obtained. CdS films with variable deposition time can be achieved depending on the agitating technique. The mean band gap energy obtained around 2.41 eV is similar to the typical value reported in the literature for this material. In addition, by oscillating only the substrate during deposition is possible to obtain clean films and avoid the formation of colloidal precipitates on the chemical bath, normally presented when it is magnetically or ultrasonically agitated.
publishDate 2006
dc.date.none.fl_str_mv 2006-09-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600069
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600069
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97332006000600069
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.36 n.3b 2006
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
_version_ 1754734863391391744