Differential Gain Analysis of InGaAs/InGaAsP/InP Multiquantum Well Lasers with 1.55 mm Emission Wavelength

Detalhes bibliográficos
Autor(a) principal: Furtado,M.T.
Data de Publicação: 1997
Outros Autores: Carvalho Jr.,W., Machado,A.M., Jomori,K.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331997000400005
Resumo: We present measurements of the differential gain of multiquantum well (MQW) broad area lasers emitting at 1.55<FONT FACE="Symbol">m</font>m wavelength, taking into account the nonuniform stimulated emission caused by filamentation within the optical cavity. The differential gain was determined from measurements of the threshold current density, considering the losses due to the inhomogenous carrier density distribution, as an apparent leakage current effect in the output power-current characteristics. The lasers were grown by low pressure MOCVD and incorporate an InGaAs/InGaAsP/InP separate confinement MQW active region. The results are compared with previous data reported on similar MQW heterostructures.
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spelling Differential Gain Analysis of InGaAs/InGaAsP/InP Multiquantum Well Lasers with 1.55 mm Emission WavelengthWe present measurements of the differential gain of multiquantum well (MQW) broad area lasers emitting at 1.55<FONT FACE="Symbol">m</font>m wavelength, taking into account the nonuniform stimulated emission caused by filamentation within the optical cavity. The differential gain was determined from measurements of the threshold current density, considering the losses due to the inhomogenous carrier density distribution, as an apparent leakage current effect in the output power-current characteristics. The lasers were grown by low pressure MOCVD and incorporate an InGaAs/InGaAsP/InP separate confinement MQW active region. The results are compared with previous data reported on similar MQW heterostructures.Sociedade Brasileira de Física1997-12-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331997000400005Brazilian Journal of Physics v.27 n.4 1997reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97331997000400005info:eu-repo/semantics/openAccessFurtado,M.T.Carvalho Jr.,W.Machado,A.M.Jomori,K.eng1999-06-14T00:00:00Zoai:scielo:S0103-97331997000400005Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:1999-06-14T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Differential Gain Analysis of InGaAs/InGaAsP/InP Multiquantum Well Lasers with 1.55 mm Emission Wavelength
title Differential Gain Analysis of InGaAs/InGaAsP/InP Multiquantum Well Lasers with 1.55 mm Emission Wavelength
spellingShingle Differential Gain Analysis of InGaAs/InGaAsP/InP Multiquantum Well Lasers with 1.55 mm Emission Wavelength
Furtado,M.T.
title_short Differential Gain Analysis of InGaAs/InGaAsP/InP Multiquantum Well Lasers with 1.55 mm Emission Wavelength
title_full Differential Gain Analysis of InGaAs/InGaAsP/InP Multiquantum Well Lasers with 1.55 mm Emission Wavelength
title_fullStr Differential Gain Analysis of InGaAs/InGaAsP/InP Multiquantum Well Lasers with 1.55 mm Emission Wavelength
title_full_unstemmed Differential Gain Analysis of InGaAs/InGaAsP/InP Multiquantum Well Lasers with 1.55 mm Emission Wavelength
title_sort Differential Gain Analysis of InGaAs/InGaAsP/InP Multiquantum Well Lasers with 1.55 mm Emission Wavelength
author Furtado,M.T.
author_facet Furtado,M.T.
Carvalho Jr.,W.
Machado,A.M.
Jomori,K.
author_role author
author2 Carvalho Jr.,W.
Machado,A.M.
Jomori,K.
author2_role author
author
author
dc.contributor.author.fl_str_mv Furtado,M.T.
Carvalho Jr.,W.
Machado,A.M.
Jomori,K.
description We present measurements of the differential gain of multiquantum well (MQW) broad area lasers emitting at 1.55<FONT FACE="Symbol">m</font>m wavelength, taking into account the nonuniform stimulated emission caused by filamentation within the optical cavity. The differential gain was determined from measurements of the threshold current density, considering the losses due to the inhomogenous carrier density distribution, as an apparent leakage current effect in the output power-current characteristics. The lasers were grown by low pressure MOCVD and incorporate an InGaAs/InGaAsP/InP separate confinement MQW active region. The results are compared with previous data reported on similar MQW heterostructures.
publishDate 1997
dc.date.none.fl_str_mv 1997-12-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331997000400005
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331997000400005
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97331997000400005
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.27 n.4 1997
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
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