Production and characterization of indium oxide and indium nitride

• Autor(a) principal: Jimenez B.,Luis C.
• Data de Publicação: 2006
• Outros Autores: Méndez P.,Henry A., Páez S.,Beynor A., Ramírez O.,María E., Rodríguez H.,Hernán
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Brazilian Journal of Physics
• Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600058
• topic: Indium oxide; Indium nitride; Scattering mechanisms; Thermoelectric power

Thin films of indium oxide 200 nm thick and indium nitride 150 nm thick were produced by reactive sputtering deposition onto soda lime substrates. The Indium cathode was kept under vacuum attached to a high voltage dc. The In xOy films were obtained in argon-oxygen mixture with total pressure between 2 and 7 Pa, current density between 0.04 and 0.56 mA/cm² and substrate temperature of 300 K. The In xNy films were obtained in argon-nitrogen mixture with total pressure between 1 and 5 Pa, current density between 0.18 and 14 mA/cm² and substrate temperature of 320 K. Results revealed that thin films give rise to high conductivity, are transparent and have a carrier density of 10(19) cm- 3 for In xOy and 10(17) cm- 3 for In xNy. These results were obtained mainly from temperature dependent alpha and sigma measurements. The reduced chemical potential was calculated considering three different scattering mechanisms i.e. interaction with optically polarized phonons, interaction with ionized impurities and interaction with grains, in order to identify the main scattering mechanism, which resulted to be due to impurities.