Surface morphology analysis of GaInAsSb films grown by liquid phase epitaxy

Detalhes bibliográficos
Autor(a) principal: Tirado-Mejía,L.
Data de Publicação: 2006
Outros Autores: Ramírez,J. G., Gómez,M. E., Ariza-Calderón,H.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600072
Resumo: We studied growth mechanisms in semiconducting Ga1 - xIn xAs ySb1 - y films grown by liquid phase epitaxy on (100) GaSb:Te (10(17) cm- 3) substrates at 600 ºC solution-substrate temperature. Atomic Force Microscopy (AFM) images of these films show step-like corrugations, undulations, grooves, and terraces. The terraces are a few nm in height and hundreds of nanometers in length. Epitaxial Ga1 - xIn xAs ySb1 - y films grow lattice-matched to the (100) GaSb substrates. These narrow-gap quaternary Ga1 - xIn xAs ySb1 - y compounds are suitable materials for heterostructure devices operating in the infrared wavelength range. The estimated x and y values are in the GaSb-rich zone. The step-like corrugations (bunching steps) are formed by different mechanisms, such as pinning effect probably due to impurities on the substrate surface.
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spelling Surface morphology analysis of GaInAsSb films grown by liquid phase epitaxyLiquid phase epitaxySurface structureQuaternary semiconductorsWe studied growth mechanisms in semiconducting Ga1 - xIn xAs ySb1 - y films grown by liquid phase epitaxy on (100) GaSb:Te (10(17) cm- 3) substrates at 600 ºC solution-substrate temperature. Atomic Force Microscopy (AFM) images of these films show step-like corrugations, undulations, grooves, and terraces. The terraces are a few nm in height and hundreds of nanometers in length. Epitaxial Ga1 - xIn xAs ySb1 - y films grow lattice-matched to the (100) GaSb substrates. These narrow-gap quaternary Ga1 - xIn xAs ySb1 - y compounds are suitable materials for heterostructure devices operating in the infrared wavelength range. The estimated x and y values are in the GaSb-rich zone. The step-like corrugations (bunching steps) are formed by different mechanisms, such as pinning effect probably due to impurities on the substrate surface.Sociedade Brasileira de Física2006-09-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600072Brazilian Journal of Physics v.36 n.3b 2006reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332006000600072info:eu-repo/semantics/openAccessTirado-Mejía,L.Ramírez,J. G.Gómez,M. E.Ariza-Calderón,H.eng2006-11-29T00:00:00Zoai:scielo:S0103-97332006000600072Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2006-11-29T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Surface morphology analysis of GaInAsSb films grown by liquid phase epitaxy
title Surface morphology analysis of GaInAsSb films grown by liquid phase epitaxy
spellingShingle Surface morphology analysis of GaInAsSb films grown by liquid phase epitaxy
Tirado-Mejía,L.
Liquid phase epitaxy
Surface structure
Quaternary semiconductors
title_short Surface morphology analysis of GaInAsSb films grown by liquid phase epitaxy
title_full Surface morphology analysis of GaInAsSb films grown by liquid phase epitaxy
title_fullStr Surface morphology analysis of GaInAsSb films grown by liquid phase epitaxy
title_full_unstemmed Surface morphology analysis of GaInAsSb films grown by liquid phase epitaxy
title_sort Surface morphology analysis of GaInAsSb films grown by liquid phase epitaxy
author Tirado-Mejía,L.
author_facet Tirado-Mejía,L.
Ramírez,J. G.
Gómez,M. E.
Ariza-Calderón,H.
author_role author
author2 Ramírez,J. G.
Gómez,M. E.
Ariza-Calderón,H.
author2_role author
author
author
dc.contributor.author.fl_str_mv Tirado-Mejía,L.
Ramírez,J. G.
Gómez,M. E.
Ariza-Calderón,H.
dc.subject.por.fl_str_mv Liquid phase epitaxy
Surface structure
Quaternary semiconductors
topic Liquid phase epitaxy
Surface structure
Quaternary semiconductors
description We studied growth mechanisms in semiconducting Ga1 - xIn xAs ySb1 - y films grown by liquid phase epitaxy on (100) GaSb:Te (10(17) cm- 3) substrates at 600 ºC solution-substrate temperature. Atomic Force Microscopy (AFM) images of these films show step-like corrugations, undulations, grooves, and terraces. The terraces are a few nm in height and hundreds of nanometers in length. Epitaxial Ga1 - xIn xAs ySb1 - y films grow lattice-matched to the (100) GaSb substrates. These narrow-gap quaternary Ga1 - xIn xAs ySb1 - y compounds are suitable materials for heterostructure devices operating in the infrared wavelength range. The estimated x and y values are in the GaSb-rich zone. The step-like corrugations (bunching steps) are formed by different mechanisms, such as pinning effect probably due to impurities on the substrate surface.
publishDate 2006
dc.date.none.fl_str_mv 2006-09-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600072
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600072
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97332006000600072
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.36 n.3b 2006
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
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