Limitation of electron mobility in modulation-doped In0.53Ga0.47As/InP quantum wells at low temperatures
Autor(a) principal: | |
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Data de Publicação: | 2006 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Brazilian Journal of Physics |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300035 |
Resumo: | The low-temperature electron mobility is investigated here for electrons confined in modulation-doped In0.53Ga0.47As/InP single symmetric quantum wells. The subband structure calculation is developed via variational method, both Schrödinger and Poisson equations being solved simultaneously with adequate heterointerface matching conditions. With this in hands, the main electron scattering rates are computed, namely alloy disorder, remote ionized impurity, and interface roughness. As a result, interesting interchanges in these scattering rates were found by varying the well width and the spacer width, which show that some scattering mechanisms can surpass the alloy disorder scattering rate and come to limit the electron mobility, a behavior not reported in the literature. |
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Brazilian Journal of Physics |
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Limitation of electron mobility in modulation-doped In0.53Ga0.47As/InP quantum wells at low temperaturesElectron mobilityIn0:53Ga0:47As/InP Quantum WellsLow-temperatureThe low-temperature electron mobility is investigated here for electrons confined in modulation-doped In0.53Ga0.47As/InP single symmetric quantum wells. The subband structure calculation is developed via variational method, both Schrödinger and Poisson equations being solved simultaneously with adequate heterointerface matching conditions. With this in hands, the main electron scattering rates are computed, namely alloy disorder, remote ionized impurity, and interface roughness. As a result, interesting interchanges in these scattering rates were found by varying the well width and the spacer width, which show that some scattering mechanisms can surpass the alloy disorder scattering rate and come to limit the electron mobility, a behavior not reported in the literature.Sociedade Brasileira de Física2006-06-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300035Brazilian Journal of Physics v.36 n.2a 2006reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332006000300035info:eu-repo/semantics/openAccessLima,F. M. S.Veloso,A. B.Fonseca,A. L. A.Nunes,O. A. C.eng2006-07-06T00:00:00Zoai:scielo:S0103-97332006000300035Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2006-07-06T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false |
dc.title.none.fl_str_mv |
Limitation of electron mobility in modulation-doped In0.53Ga0.47As/InP quantum wells at low temperatures |
title |
Limitation of electron mobility in modulation-doped In0.53Ga0.47As/InP quantum wells at low temperatures |
spellingShingle |
Limitation of electron mobility in modulation-doped In0.53Ga0.47As/InP quantum wells at low temperatures Lima,F. M. S. Electron mobility In0:53Ga0:47As/InP Quantum Wells Low-temperature |
title_short |
Limitation of electron mobility in modulation-doped In0.53Ga0.47As/InP quantum wells at low temperatures |
title_full |
Limitation of electron mobility in modulation-doped In0.53Ga0.47As/InP quantum wells at low temperatures |
title_fullStr |
Limitation of electron mobility in modulation-doped In0.53Ga0.47As/InP quantum wells at low temperatures |
title_full_unstemmed |
Limitation of electron mobility in modulation-doped In0.53Ga0.47As/InP quantum wells at low temperatures |
title_sort |
Limitation of electron mobility in modulation-doped In0.53Ga0.47As/InP quantum wells at low temperatures |
author |
Lima,F. M. S. |
author_facet |
Lima,F. M. S. Veloso,A. B. Fonseca,A. L. A. Nunes,O. A. C. |
author_role |
author |
author2 |
Veloso,A. B. Fonseca,A. L. A. Nunes,O. A. C. |
author2_role |
author author author |
dc.contributor.author.fl_str_mv |
Lima,F. M. S. Veloso,A. B. Fonseca,A. L. A. Nunes,O. A. C. |
dc.subject.por.fl_str_mv |
Electron mobility In0:53Ga0:47As/InP Quantum Wells Low-temperature |
topic |
Electron mobility In0:53Ga0:47As/InP Quantum Wells Low-temperature |
description |
The low-temperature electron mobility is investigated here for electrons confined in modulation-doped In0.53Ga0.47As/InP single symmetric quantum wells. The subband structure calculation is developed via variational method, both Schrödinger and Poisson equations being solved simultaneously with adequate heterointerface matching conditions. With this in hands, the main electron scattering rates are computed, namely alloy disorder, remote ionized impurity, and interface roughness. As a result, interesting interchanges in these scattering rates were found by varying the well width and the spacer width, which show that some scattering mechanisms can surpass the alloy disorder scattering rate and come to limit the electron mobility, a behavior not reported in the literature. |
publishDate |
2006 |
dc.date.none.fl_str_mv |
2006-06-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300035 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300035 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/S0103-97332006000300035 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
dc.source.none.fl_str_mv |
Brazilian Journal of Physics v.36 n.2a 2006 reponame:Brazilian Journal of Physics instname:Sociedade Brasileira de Física (SBF) instacron:SBF |
instname_str |
Sociedade Brasileira de Física (SBF) |
instacron_str |
SBF |
institution |
SBF |
reponame_str |
Brazilian Journal of Physics |
collection |
Brazilian Journal of Physics |
repository.name.fl_str_mv |
Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF) |
repository.mail.fl_str_mv |
sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br |
_version_ |
1754734862712963072 |