An FET-based microwave active circuit with dual-band negative group delay

• Autor(a) principal: Ravelo,Blaise
• Data de Publicação: 2011
• Outros Autores: De Blasi,Serge
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Journal of Microwaves. Optoelectronics and Electromagnetic Applications
• Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S2179-10742011000200006
• topic: Dual-band device; microwave active circuit; negative group delay (NGD); signal synchronization

Recent studies proved that certain electronic active circuits are capable to exhibit simultaneously a negative group delay (NGD) and amplification in microwave frequency bands. One of the simplest topologies generating this counterintuitive NGD function effect is formed by a series RLC-network in cascade with a transistor. By using this cell, similar to the classical electronic functions, dual-band NGD microwave devices with loss compensation possibility can be designed. Theoretic demonstrations concerning the theory of the NGD circuit considered are presented. The dual-band NGD concept feasibility is concretely illustrated by an example of EM/circuit co-simulations. So, in frequency domain, dual-band NGD with minimal values of about -1 ns was observed simultaneously within two frequency bands centered at about 1.05 GHz and 2.05 GHz. To highlight the functioning of the hybrid device considered, time-domain analysis showing the RF/microwave signal advancement is performed. As application, the concept investigated can be envisaged for data synchronization in multi-channel wireless communication systems eventually degraded by undesired EMI effects.