Electron and photon stimulated ion desorption from poly(thiophene)

• Autor(a) principal: Rita,J. R. Santa
• Data de Publicação: 2013
• Outros Autores: Borges,B. G. A. L., Beck,B., Garcia-Basabe,Y., Roman,L. S., Rocco,M. L. M.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Journal of the Brazilian Chemical Society (Online)
• Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-50532013000400013
• topic: poly(thiophene); semiconducting polymers; electron stimulated ion desorption (ESID); photon stimulated ion desorption (PSID); secondary electrons

Poly(thiophene) (PT) was studied by the electron (ESID) and photon (PSID) stimulated ion desorption techniques coupled with time-of-flight mass spectrometry (TOF-MS) in order to investigate the response from this semiconducting polymer when submitted to electron and photon beams. Atomic sulfur ions and its isotopic contributions could be clearly identified. Maximum intensity in the ESID ion yield curves was measured for all ions around 900 eV, which may be related to carbon 1s ionization and explained in terms of the Auger stimulated ion desorption process. The study of the influence of secondary electrons for the desorption process was also investigated, which is highly important, since they involve lower energy levels, affecting the properties of interest of photovoltaic materials. TOF-PSID analysis on PT films with different thicknesses showed an increase in the efficiency to desorb higher mass species, like C3HS+. This result was attributed to the role of secondary electrons originated in the inner layers of the material.