A study of SnO2 nanowire FET devices: ambipolarity effect induced by UV Light exposure and their use as UV sensors
Autor(a) principal: | |
---|---|
Data de Publicação: | 2021 |
Tipo de documento: | Dissertação |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFSCAR |
Texto Completo: | https://repositorio.ufscar.br/handle/ufscar/14318 |
Resumo: | In this work, SnO2 nanowires (NW) were grown by the Vapor-Liquid-Solid (VLS) method and used to build single NW FET devices. As-grown samples went through structural and morphological analysis and seven single NW devices were built, with a back-gated FET architecture, by direct photolithography. SnO2 NWs grown by VLS method presented the desired tetragonal structure and monocrystalline character, inspected by XRD and HRTEM techniques. In addition, the as-grown samples morphology of a NW with lengths of tens of micrometers and cross-section mostly displaying rectangular geometry were assured through SEM images. The device fabrication process by direct photolithography was proven to be efficient to build the back-gated FET architecture devices with great electrical contacts quality. Single SnO2NWFET’s transport properties were explored, where on/off ratio, mobility and carrier density parameters were extracted, resulting in values around 105, lower than 0.1 cm2/V and in the order of 1019/cm3, respectively. Schottky barrier heights were estimated, considering the gate bias as grounded and room temperature, and Φ_Bn values between 0.41 and 0.75 eV were found. Afterwards, different conditions were analyzed: the device (1) under positive gate bias (V_G>0) and no applied source/drain bias (V_DS=0); (2) V_DS>0 and V_G>0; (3) V_DS<0 and V_G<0 and (4) V_DS<0 , V_G<0 but under UV illumination. Regarding the latter, all devices presented UV induced ambipolary effect, where on/off states ratio with values of the same order were obtained and ranged from 1.1 to about 19.3. A simple band model to explain the observed behavior, i.e., describe how both types of carriers can contribute to the final current depending on the biasing was proposed. Ambipolarity is one of those effects that may direct its use for specific purposes, where a controllable separated unipolar mode can be achieved in one single device. Furthermore, the devices were tested as UV sensors and presented satisfactory results: as a UV photodetector, the acquired I_on⁄I_off ratio was found to be of the order of 〖10〗^4 for all devices investigated. In addition, rise time was found to range 0.56 s < τ_r< 0.63 s, whereas the decay time 0.54 s < τ_d< 0.75 s. According to those results, one can assure their huge feasibility as a UV sensor. |
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Arantes, Adryelle do NascimentoChiquito, Adenilson Joséhttp://lattes.cnpq.br/7087360072774314http://lattes.cnpq.br/6444614628132115d2a6ae48-49d8-419f-8680-da30938cb17b2021-05-27T11:27:42Z2021-05-27T11:27:42Z2021-03-18ARANTES, Adryelle do Nascimento. A study of SnO2 nanowire FET devices: ambipolarity effect induced by UV Light exposure and their use as UV sensors. 2021. Dissertação (Mestrado em Física) – Universidade Federal de São Carlos, São Carlos, 2021. Disponível em: https://repositorio.ufscar.br/handle/ufscar/14318.https://repositorio.ufscar.br/handle/ufscar/14318In this work, SnO2 nanowires (NW) were grown by the Vapor-Liquid-Solid (VLS) method and used to build single NW FET devices. As-grown samples went through structural and morphological analysis and seven single NW devices were built, with a back-gated FET architecture, by direct photolithography. SnO2 NWs grown by VLS method presented the desired tetragonal structure and monocrystalline character, inspected by XRD and HRTEM techniques. In addition, the as-grown samples morphology of a NW with lengths of tens of micrometers and cross-section mostly displaying rectangular geometry were assured through SEM images. The device fabrication process by direct photolithography was proven to be efficient to build the back-gated FET architecture devices with great electrical contacts quality. Single SnO2NWFET’s transport properties were explored, where on/off ratio, mobility and carrier density parameters were extracted, resulting in values around 105, lower than 0.1 cm2/V and in the order of 1019/cm3, respectively. Schottky barrier heights were estimated, considering the gate bias as grounded and room temperature, and Φ_Bn values between 0.41 and 0.75 eV were found. Afterwards, different conditions were analyzed: the device (1) under positive gate bias (V_G>0) and no applied source/drain bias (V_DS=0); (2) V_DS>0 and V_G>0; (3) V_DS<0 and V_G<0 and (4) V_DS<0 , V_G<0 but under UV illumination. Regarding the latter, all devices presented UV induced ambipolary effect, where on/off states ratio with values of the same order were obtained and ranged from 1.1 to about 19.3. A simple band model to explain the observed behavior, i.e., describe how both types of carriers can contribute to the final current depending on the biasing was proposed. Ambipolarity is one of those effects that may direct its use for specific purposes, where a controllable separated unipolar mode can be achieved in one single device. Furthermore, the devices were tested as UV sensors and presented satisfactory results: as a UV photodetector, the acquired I_on⁄I_off ratio was found to be of the order of 〖10〗^4 for all devices investigated. In addition, rise time was found to range 0.56 s < τ_r< 0.63 s, whereas the decay time 0.54 s < τ_d< 0.75 s. According to those results, one can assure their huge feasibility as a UV sensor.Neste trabalho, nanofios (NW, do inglês Nanowire) de SnO2 foram crescidos pelo método Vapor-Líquido-Sólido (VLS) e utilizados para construir dispositivos FET (do inglês, Field Effect Transistor) de um único nanofio (SnO2NWFET). As amostras crescidas passaram por análises estruturais e morfológicas e sete dispositivos foram construídos, com uma arquitetura do tipo back-gate, por fotolitografia direta. Os NWs de SnO2 crescidos pelo método VLS apresentaram a estrutura tetragonal e o caráter monocristalino desejados, inspecionados pelas técnicas de difratometria de raio X (DRX) e microscopia eletrônica de transmissão de alta resolução (HRTEM). Além disso, a morfologia de NWs com comprimentos de dezenas de micrômetros e seção transversal exibindo, em geral, geometria retangular foram observadas por meio de imagens de microscopia eletrônica de varredura (MEV). O processo de fabricação do dispositivo por fotolitografia direta mostrou-se eficiente para construir dispositivos com ótima qualidade de contatos elétricos. As propriedades de transporte de SnO2NWFET foram exploradas, onde a relação on/off, a mobilidade e os parâmetros de densidade de portadores foram extraídos, resultando em valores em torno de 105, menores que 0,1 cm2/V e na ordem de 1019/cm3, respectivamente. Foram estimadas as alturas das barreiras Schottky, considerando o gate como aterrado, e foram encontrados valores de Φ_Bn entre 0,41 e 0,75 eV. Posteriormente, diferentes condições foram analisadas: o dispositivo (1) com tensão positiva aplicada no gate (V_G>0), sem tensão aplicada na fonte/dreno (V_DS=0); (2) V_DS>0 e V_G>0; (3) V_DS<0 e V_G<0 e (4) V_DS<0 , V_G<0 mas sob irradiação de luz ultravioleta (UV). Em relação a este último, todos os dispositivos apresentaram efeito ambipolar induzido pela luz UV, onde foram obtidas relações de estados on/off com valores da mesma ordem que variaram de 1,1 a cerca de 19,3. Foi proposto um modelo simples de bandas para explicar o comportamento observado, ou seja, descrever como os dois tipos de portadores podem contribuir para a corrente final dependendo da polarização. A ambipolaridade é um daqueles efeitos que podem direcionar seu uso para fins específicos, onde um modo unipolar separado controlável pode ser alcançado em um único dispositivo. Além disso, os dispositivos foram testados como sensores de luz UV e apresentaram resultados satisfatórios: como fotodetector de luz UV, a relação I_on⁄I_off adquirida foi da ordem de 104 para todos os dispositivos investigados. Além disso, foi observado um tempo de subida (τ_r) 0,56 s < τ_r< 0,63, enquanto o tempo de decaimento (τ_d) 0,54 s < τ_d< 0,75 s. De acordo com esses resultados, pode-se assegurar sua enorme viabilidade como sensor UV.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)CNPQ : 302640/2010-0CNPQ: 305615/2014-9CNPQ: 305656/2018-0CAPES: 88882.461700/2019-01FAPESP: 2013/19692-0FAPESP: 2013/07296-2engUniversidade Federal de São CarlosCâmpus São CarlosPrograma de Pós-Graduação em Física - PPGFUFSCarAttribution-NonCommercial-NoDerivs 3.0 Brazilhttp://creativecommons.org/licenses/by-nc-nd/3.0/br/info:eu-repo/semantics/openAccessFET de um único nanofio de SnO2Nanofios de SnO2Ambipolaridade induzidaFotodetector de luz UV.SnO2 single nanowire FETSnO2 nanowiresVLS growthInduced ambipolarityUV photodetector.CIENCIAS EXATAS E DA TERRA::FISICA::FISICA DA MATERIA CONDENSADA::TRANSP.ELETRONICOS E PROP. ELETRICAS DE SUPERFICIES;INTERFACES E PELICULASA study of SnO2 nanowire FET devices: ambipolarity effect induced by UV Light exposure and their use as UV sensorsUm estudo de dispositivos de nanofios de SnO2: efeito de ambipolaridade induzido por luz UV e o uso como sensores de luz UVinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/masterThesis6006002c000bdd-a13f-4ae3-90e3-0cfe1cb12110reponame:Repositório Institucional da UFSCARinstname:Universidade Federal de São Carlos (UFSCAR)instacron:UFSCARORIGINALDISSERTAÇÃO_REPOSITÓRIO.pdfDISSERTAÇÃO_REPOSITÓRIO.pdfDissertaçãoapplication/pdf4358056https://repositorio.ufscar.br/bitstream/ufscar/14318/3/DISSERTA%c3%87%c3%83O_REPOSIT%c3%93RIO.pdf0e0f93ba422af59689991bf27f513d7cMD53MODELO carta versão final REPOSITÓRIO.pdfMODELO carta versão final REPOSITÓRIO.pdfCarta comprovanteapplication/pdf592140https://repositorio.ufscar.br/bitstream/ufscar/14318/4/MODELO%20carta%20vers%c3%a3o%20final%20REPOSIT%c3%93RIO.pdf529ca5a2b56e48a832f9631d20779cd6MD54CC-LICENSElicense_rdflicense_rdfapplication/rdf+xml; charset=utf-8811https://repositorio.ufscar.br/bitstream/ufscar/14318/5/license_rdfe39d27027a6cc9cb039ad269a5db8e34MD55TEXTDISSERTAÇÃO_REPOSITÓRIO.pdf.txtDISSERTAÇÃO_REPOSITÓRIO.pdf.txtExtracted texttext/plain102417https://repositorio.ufscar.br/bitstream/ufscar/14318/6/DISSERTA%c3%87%c3%83O_REPOSIT%c3%93RIO.pdf.txtc08449aba2b12a63f7aea0cdf6d2fcb9MD56MODELO carta versão final REPOSITÓRIO.pdf.txtMODELO carta versão final REPOSITÓRIO.pdf.txtExtracted texttext/plain1423https://repositorio.ufscar.br/bitstream/ufscar/14318/8/MODELO%20carta%20vers%c3%a3o%20final%20REPOSIT%c3%93RIO.pdf.txtb2f4ea5dea498286d424d4b7d59ab04cMD58THUMBNAILDISSERTAÇÃO_REPOSITÓRIO.pdf.jpgDISSERTAÇÃO_REPOSITÓRIO.pdf.jpgIM Thumbnailimage/jpeg7479https://repositorio.ufscar.br/bitstream/ufscar/14318/7/DISSERTA%c3%87%c3%83O_REPOSIT%c3%93RIO.pdf.jpgef9fafbb851f2b472e313e5e3280e15aMD57MODELO carta versão final REPOSITÓRIO.pdf.jpgMODELO carta versão final REPOSITÓRIO.pdf.jpgIM Thumbnailimage/jpeg6364https://repositorio.ufscar.br/bitstream/ufscar/14318/9/MODELO%20carta%20vers%c3%a3o%20final%20REPOSIT%c3%93RIO.pdf.jpg994936fc945f37b3b392f556505f54b4MD59ufscar/143182023-09-18 18:32:11.204oai:repositorio.ufscar.br:ufscar/14318Repositório InstitucionalPUBhttps://repositorio.ufscar.br/oai/requestopendoar:43222023-09-18T18:32:11Repositório Institucional da UFSCAR - Universidade Federal de São Carlos (UFSCAR)false |
dc.title.eng.fl_str_mv |
A study of SnO2 nanowire FET devices: ambipolarity effect induced by UV Light exposure and their use as UV sensors |
dc.title.alternative.por.fl_str_mv |
Um estudo de dispositivos de nanofios de SnO2: efeito de ambipolaridade induzido por luz UV e o uso como sensores de luz UV |
title |
A study of SnO2 nanowire FET devices: ambipolarity effect induced by UV Light exposure and their use as UV sensors |
spellingShingle |
A study of SnO2 nanowire FET devices: ambipolarity effect induced by UV Light exposure and their use as UV sensors Arantes, Adryelle do Nascimento FET de um único nanofio de SnO2 Nanofios de SnO2 Ambipolaridade induzida Fotodetector de luz UV. SnO2 single nanowire FET SnO2 nanowires VLS growth Induced ambipolarity UV photodetector. CIENCIAS EXATAS E DA TERRA::FISICA::FISICA DA MATERIA CONDENSADA::TRANSP.ELETRONICOS E PROP. ELETRICAS DE SUPERFICIES;INTERFACES E PELICULAS |
title_short |
A study of SnO2 nanowire FET devices: ambipolarity effect induced by UV Light exposure and their use as UV sensors |
title_full |
A study of SnO2 nanowire FET devices: ambipolarity effect induced by UV Light exposure and their use as UV sensors |
title_fullStr |
A study of SnO2 nanowire FET devices: ambipolarity effect induced by UV Light exposure and their use as UV sensors |
title_full_unstemmed |
A study of SnO2 nanowire FET devices: ambipolarity effect induced by UV Light exposure and their use as UV sensors |
title_sort |
A study of SnO2 nanowire FET devices: ambipolarity effect induced by UV Light exposure and their use as UV sensors |
author |
Arantes, Adryelle do Nascimento |
author_facet |
Arantes, Adryelle do Nascimento |
author_role |
author |
dc.contributor.authorlattes.por.fl_str_mv |
http://lattes.cnpq.br/6444614628132115 |
dc.contributor.author.fl_str_mv |
Arantes, Adryelle do Nascimento |
dc.contributor.advisor1.fl_str_mv |
Chiquito, Adenilson José |
dc.contributor.advisor1Lattes.fl_str_mv |
http://lattes.cnpq.br/7087360072774314 |
dc.contributor.authorID.fl_str_mv |
d2a6ae48-49d8-419f-8680-da30938cb17b |
contributor_str_mv |
Chiquito, Adenilson José |
dc.subject.por.fl_str_mv |
FET de um único nanofio de SnO2 Nanofios de SnO2 Ambipolaridade induzida Fotodetector de luz UV. |
topic |
FET de um único nanofio de SnO2 Nanofios de SnO2 Ambipolaridade induzida Fotodetector de luz UV. SnO2 single nanowire FET SnO2 nanowires VLS growth Induced ambipolarity UV photodetector. CIENCIAS EXATAS E DA TERRA::FISICA::FISICA DA MATERIA CONDENSADA::TRANSP.ELETRONICOS E PROP. ELETRICAS DE SUPERFICIES;INTERFACES E PELICULAS |
dc.subject.eng.fl_str_mv |
SnO2 single nanowire FET SnO2 nanowires VLS growth Induced ambipolarity UV photodetector. |
dc.subject.cnpq.fl_str_mv |
CIENCIAS EXATAS E DA TERRA::FISICA::FISICA DA MATERIA CONDENSADA::TRANSP.ELETRONICOS E PROP. ELETRICAS DE SUPERFICIES;INTERFACES E PELICULAS |
description |
In this work, SnO2 nanowires (NW) were grown by the Vapor-Liquid-Solid (VLS) method and used to build single NW FET devices. As-grown samples went through structural and morphological analysis and seven single NW devices were built, with a back-gated FET architecture, by direct photolithography. SnO2 NWs grown by VLS method presented the desired tetragonal structure and monocrystalline character, inspected by XRD and HRTEM techniques. In addition, the as-grown samples morphology of a NW with lengths of tens of micrometers and cross-section mostly displaying rectangular geometry were assured through SEM images. The device fabrication process by direct photolithography was proven to be efficient to build the back-gated FET architecture devices with great electrical contacts quality. Single SnO2NWFET’s transport properties were explored, where on/off ratio, mobility and carrier density parameters were extracted, resulting in values around 105, lower than 0.1 cm2/V and in the order of 1019/cm3, respectively. Schottky barrier heights were estimated, considering the gate bias as grounded and room temperature, and Φ_Bn values between 0.41 and 0.75 eV were found. Afterwards, different conditions were analyzed: the device (1) under positive gate bias (V_G>0) and no applied source/drain bias (V_DS=0); (2) V_DS>0 and V_G>0; (3) V_DS<0 and V_G<0 and (4) V_DS<0 , V_G<0 but under UV illumination. Regarding the latter, all devices presented UV induced ambipolary effect, where on/off states ratio with values of the same order were obtained and ranged from 1.1 to about 19.3. A simple band model to explain the observed behavior, i.e., describe how both types of carriers can contribute to the final current depending on the biasing was proposed. Ambipolarity is one of those effects that may direct its use for specific purposes, where a controllable separated unipolar mode can be achieved in one single device. Furthermore, the devices were tested as UV sensors and presented satisfactory results: as a UV photodetector, the acquired I_on⁄I_off ratio was found to be of the order of 〖10〗^4 for all devices investigated. In addition, rise time was found to range 0.56 s < τ_r< 0.63 s, whereas the decay time 0.54 s < τ_d< 0.75 s. According to those results, one can assure their huge feasibility as a UV sensor. |
publishDate |
2021 |
dc.date.accessioned.fl_str_mv |
2021-05-27T11:27:42Z |
dc.date.available.fl_str_mv |
2021-05-27T11:27:42Z |
dc.date.issued.fl_str_mv |
2021-03-18 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/masterThesis |
format |
masterThesis |
status_str |
publishedVersion |
dc.identifier.citation.fl_str_mv |
ARANTES, Adryelle do Nascimento. A study of SnO2 nanowire FET devices: ambipolarity effect induced by UV Light exposure and their use as UV sensors. 2021. Dissertação (Mestrado em Física) – Universidade Federal de São Carlos, São Carlos, 2021. Disponível em: https://repositorio.ufscar.br/handle/ufscar/14318. |
dc.identifier.uri.fl_str_mv |
https://repositorio.ufscar.br/handle/ufscar/14318 |
identifier_str_mv |
ARANTES, Adryelle do Nascimento. A study of SnO2 nanowire FET devices: ambipolarity effect induced by UV Light exposure and their use as UV sensors. 2021. Dissertação (Mestrado em Física) – Universidade Federal de São Carlos, São Carlos, 2021. Disponível em: https://repositorio.ufscar.br/handle/ufscar/14318. |
url |
https://repositorio.ufscar.br/handle/ufscar/14318 |
dc.language.iso.fl_str_mv |
eng |
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eng |
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600 600 |
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Attribution-NonCommercial-NoDerivs 3.0 Brazil http://creativecommons.org/licenses/by-nc-nd/3.0/br/ info:eu-repo/semantics/openAccess |
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Attribution-NonCommercial-NoDerivs 3.0 Brazil http://creativecommons.org/licenses/by-nc-nd/3.0/br/ |
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openAccess |
dc.publisher.none.fl_str_mv |
Universidade Federal de São Carlos Câmpus São Carlos |
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Programa de Pós-Graduação em Física - PPGF |
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UFSCar |
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Universidade Federal de São Carlos Câmpus São Carlos |
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