Estudo das propriedades ópticas de filmes finos e poços quânticos de GaAsPN/GaPN
Autor(a) principal: | |
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Data de Publicação: | 2016 |
Tipo de documento: | Dissertação |
Idioma: | por |
Título da fonte: | Repositório Institucional da UFSCAR |
Texto Completo: | https://repositorio.ufscar.br/handle/ufscar/8411 |
Resumo: | Diluted nitride III-V semiconductor leagues have physical properties that make them interesting for applications on optoelectronic devices. The possibility to lattice matching GaAsPN with silicon makes this semiconductor interesting for studies. In this dissertation we investigated the optical and magneto optical properties of semiconductors nanostructures of the type GaP(N)/GaAsPN. Mesures of photoluminescence (PL), photoluminescence excitation (PLE) and magneto photoluminescence (Magneto-PL) under high fields (B≤ 15T) were performed in films of GaAsPN and multiple quantum wells (MQW) of GaAsPN/GaPN. We have studied localizations effects with measures of diamagnetic shift, stoke shift and the dependence of photoluminescence peak with temperature. We observed a negative diamagnetic shift for some samples, which is an anomalous effect in these systems. It was also seen a red shift of the PL peak when the MQW samples suffered a thermal treatment. Analyzing the spin polarization properties of this material, utilizing magneto photoluminescence resolved with circular polarization, we observed polarization of the samples as high as 30% on fields of 15T. |
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Covre, Felipe SoaresGaleti, Helder Vinícius Avançohttp://lattes.cnpq.br/3876752605313288http://lattes.cnpq.br/06056564384579628476d2ed-46d3-4b40-bd99-8422361b2c2b2017-01-16T16:14:17Z2017-01-16T16:14:17Z2016-09-08COVRE, Felipe Soares. Estudo das propriedades ópticas de filmes finos e poços quânticos de GaAsPN/GaPN. 2016. Dissertação (Mestrado em Física) – Universidade Federal de São Carlos, São Carlos, 2016. Disponível em: https://repositorio.ufscar.br/handle/ufscar/8411.https://repositorio.ufscar.br/handle/ufscar/8411Diluted nitride III-V semiconductor leagues have physical properties that make them interesting for applications on optoelectronic devices. The possibility to lattice matching GaAsPN with silicon makes this semiconductor interesting for studies. In this dissertation we investigated the optical and magneto optical properties of semiconductors nanostructures of the type GaP(N)/GaAsPN. Mesures of photoluminescence (PL), photoluminescence excitation (PLE) and magneto photoluminescence (Magneto-PL) under high fields (B≤ 15T) were performed in films of GaAsPN and multiple quantum wells (MQW) of GaAsPN/GaPN. We have studied localizations effects with measures of diamagnetic shift, stoke shift and the dependence of photoluminescence peak with temperature. We observed a negative diamagnetic shift for some samples, which is an anomalous effect in these systems. It was also seen a red shift of the PL peak when the MQW samples suffered a thermal treatment. Analyzing the spin polarization properties of this material, utilizing magneto photoluminescence resolved with circular polarization, we observed polarization of the samples as high as 30% on fields of 15T.Ligas semicondutoras III-V nitreto diluídas possuem propriedades físicas que as tornam interessantes para aplicações em dispositivos optoeletrônicos. A possibilidade de casar liga de GaAsPN com silício faz com que esse semicondutor se torne interessante para estudos. Nesta dissertação investigamos as propriedades ópticas e magneto ópticas de nanoestruturas semicondutoras do tipo GaP(N)/GaAsPN. Foram realizadas medidas de fotoluminescência (PL), fotoluminescência de excitação (PLE) e magneto fotoluminescência (Magneto-PL) sob altos campos magnéticos (B ≤ 15T), em filmes finos de GaAsPN e múltiplos poços quânticos (MQW) de GaAsPN/GaPN. Estudamos efeitos de localização dos portadores através da análise do deslocamento diamagnético da PL, deslocamento Stoke e a dependência da posição do pico de fotoluminescência com a temperatura. Verificamos um deslocamento diamagnético negativo para algumas das amostras, o que é um comportamento anômalo nesse tipo de sistema. Foi verificado também um deslocamento para o vermelho do pico de PL quando realizado tratamento térmico nas amostras de MQWs. Analisando as propriedades de polarização de spin desse material, utilizando magneto-PL resolvida em polarização circular, foi observada uma polarização circular de até 30% num campo de 15 T.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)porUniversidade Federal de São CarlosCâmpus São CarlosPrograma de Pós-Graduação em Física - PPGFUFSCarGaAsPNSemicondutor III-VFotoluminescênciaIII-V SemiconductorPhotoluminescenceCIENCIAS EXATAS E DA TERRA::FISICA::FISICA GERALEstudo das propriedades ópticas de filmes finos e poços quânticos de GaAsPN/GaPNinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/masterThesisOnline60060036ce5ed5-5345-4b8c-a5da-481118887f30info:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFSCARinstname:Universidade Federal de São Carlos (UFSCAR)instacron:UFSCARORIGINALDissFSC.pdfDissFSC.pdfapplication/pdf3416104https://repositorio.ufscar.br/bitstream/ufscar/8411/1/DissFSC.pdf8ad6353644ccdd0f0d768fbd0ed2324fMD51LICENSElicense.txtlicense.txttext/plain; charset=utf-81957https://repositorio.ufscar.br/bitstream/ufscar/8411/2/license.txtae0398b6f8b235e40ad82cba6c50031dMD52TEXTDissFSC.pdf.txtDissFSC.pdf.txtExtracted texttext/plain92971https://repositorio.ufscar.br/bitstream/ufscar/8411/3/DissFSC.pdf.txt20b93375e2d7cb5f7dac387c4961591dMD53THUMBNAILDissFSC.pdf.jpgDissFSC.pdf.jpgIM Thumbnailimage/jpeg6875https://repositorio.ufscar.br/bitstream/ufscar/8411/4/DissFSC.pdf.jpg15de320629b9458bcef0157160903063MD54ufscar/84112023-09-18 18:31:05.793oai:repositorio.ufscar.br:ufscar/8411TElDRU7Dh0EgREUgRElTVFJJQlVJw4fDg08gTsODTy1FWENMVVNJVkEKCkNvbSBhIGFwcmVzZW50YcOnw6NvIGRlc3RhIGxpY2Vuw6dhLCB2b2PDqiAobyBhdXRvciAoZXMpIG91IG8gdGl0dWxhciBkb3MgZGlyZWl0b3MgZGUgYXV0b3IpIGNvbmNlZGUgw6AgVW5pdmVyc2lkYWRlCkZlZGVyYWwgZGUgU8OjbyBDYXJsb3MgbyBkaXJlaXRvIG7Do28tZXhjbHVzaXZvIGRlIHJlcHJvZHV6aXIsICB0cmFkdXppciAoY29uZm9ybWUgZGVmaW5pZG8gYWJhaXhvKSwgZS9vdQpkaXN0cmlidWlyIGEgc3VhIHRlc2Ugb3UgZGlzc2VydGHDp8OjbyAoaW5jbHVpbmRvIG8gcmVzdW1vKSBwb3IgdG9kbyBvIG11bmRvIG5vIGZvcm1hdG8gaW1wcmVzc28gZSBlbGV0csO0bmljbyBlCmVtIHF1YWxxdWVyIG1laW8sIGluY2x1aW5kbyBvcyBmb3JtYXRvcyDDoXVkaW8gb3UgdsOtZGVvLgoKVm9jw6ogY29uY29yZGEgcXVlIGEgVUZTQ2FyIHBvZGUsIHNlbSBhbHRlcmFyIG8gY29udGXDumRvLCB0cmFuc3BvciBhIHN1YSB0ZXNlIG91IGRpc3NlcnRhw6fDo28KcGFyYSBxdWFscXVlciBtZWlvIG91IGZvcm1hdG8gcGFyYSBmaW5zIGRlIHByZXNlcnZhw6fDo28uCgpWb2PDqiB0YW1iw6ltIGNvbmNvcmRhIHF1ZSBhIFVGU0NhciBwb2RlIG1hbnRlciBtYWlzIGRlIHVtYSBjw7NwaWEgYSBzdWEgdGVzZSBvdQpkaXNzZXJ0YcOnw6NvIHBhcmEgZmlucyBkZSBzZWd1cmFuw6dhLCBiYWNrLXVwIGUgcHJlc2VydmHDp8Ojby4KClZvY8OqIGRlY2xhcmEgcXVlIGEgc3VhIHRlc2Ugb3UgZGlzc2VydGHDp8OjbyDDqSBvcmlnaW5hbCBlIHF1ZSB2b2PDqiB0ZW0gbyBwb2RlciBkZSBjb25jZWRlciBvcyBkaXJlaXRvcyBjb250aWRvcwpuZXN0YSBsaWNlbsOnYS4gVm9jw6ogdGFtYsOpbSBkZWNsYXJhIHF1ZSBvIGRlcMOzc2l0byBkYSBzdWEgdGVzZSBvdSBkaXNzZXJ0YcOnw6NvIG7Do28sIHF1ZSBzZWphIGRlIHNldQpjb25oZWNpbWVudG8sIGluZnJpbmdlIGRpcmVpdG9zIGF1dG9yYWlzIGRlIG5pbmd1w6ltLgoKQ2FzbyBhIHN1YSB0ZXNlIG91IGRpc3NlcnRhw6fDo28gY29udGVuaGEgbWF0ZXJpYWwgcXVlIHZvY8OqIG7Do28gcG9zc3VpIGEgdGl0dWxhcmlkYWRlIGRvcyBkaXJlaXRvcyBhdXRvcmFpcywgdm9jw6oKZGVjbGFyYSBxdWUgb2J0ZXZlIGEgcGVybWlzc8OjbyBpcnJlc3RyaXRhIGRvIGRldGVudG9yIGRvcyBkaXJlaXRvcyBhdXRvcmFpcyBwYXJhIGNvbmNlZGVyIMOgIFVGU0NhcgpvcyBkaXJlaXRvcyBhcHJlc2VudGFkb3MgbmVzdGEgbGljZW7Dp2EsIGUgcXVlIGVzc2UgbWF0ZXJpYWwgZGUgcHJvcHJpZWRhZGUgZGUgdGVyY2Vpcm9zIGVzdMOhIGNsYXJhbWVudGUKaWRlbnRpZmljYWRvIGUgcmVjb25oZWNpZG8gbm8gdGV4dG8gb3Ugbm8gY29udGXDumRvIGRhIHRlc2Ugb3UgZGlzc2VydGHDp8OjbyBvcmEgZGVwb3NpdGFkYS4KCkNBU08gQSBURVNFIE9VIERJU1NFUlRBw4fDg08gT1JBIERFUE9TSVRBREEgVEVOSEEgU0lETyBSRVNVTFRBRE8gREUgVU0gUEFUUk9Dw41OSU8gT1UKQVBPSU8gREUgVU1BIEFHw4pOQ0lBIERFIEZPTUVOVE8gT1UgT1VUUk8gT1JHQU5JU01PIFFVRSBOw4NPIFNFSkEgQSBVRlNDYXIsClZPQ8OKIERFQ0xBUkEgUVVFIFJFU1BFSVRPVSBUT0RPUyBFIFFVQUlTUVVFUiBESVJFSVRPUyBERSBSRVZJU8ODTyBDT01PClRBTULDiU0gQVMgREVNQUlTIE9CUklHQcOHw5VFUyBFWElHSURBUyBQT1IgQ09OVFJBVE8gT1UgQUNPUkRPLgoKQSBVRlNDYXIgc2UgY29tcHJvbWV0ZSBhIGlkZW50aWZpY2FyIGNsYXJhbWVudGUgbyBzZXUgbm9tZSAocykgb3UgbyhzKSBub21lKHMpIGRvKHMpCmRldGVudG9yKGVzKSBkb3MgZGlyZWl0b3MgYXV0b3JhaXMgZGEgdGVzZSBvdSBkaXNzZXJ0YcOnw6NvLCBlIG7Do28gZmFyw6EgcXVhbHF1ZXIgYWx0ZXJhw6fDo28sIGFsw6ltIGRhcXVlbGFzCmNvbmNlZGlkYXMgcG9yIGVzdGEgbGljZW7Dp2EuCg==Repositório InstitucionalPUBhttps://repositorio.ufscar.br/oai/requestopendoar:43222023-09-18T18:31:05Repositório Institucional da UFSCAR - Universidade Federal de São Carlos (UFSCAR)false |
dc.title.por.fl_str_mv |
Estudo das propriedades ópticas de filmes finos e poços quânticos de GaAsPN/GaPN |
title |
Estudo das propriedades ópticas de filmes finos e poços quânticos de GaAsPN/GaPN |
spellingShingle |
Estudo das propriedades ópticas de filmes finos e poços quânticos de GaAsPN/GaPN Covre, Felipe Soares GaAsPN Semicondutor III-V Fotoluminescência III-V Semiconductor Photoluminescence CIENCIAS EXATAS E DA TERRA::FISICA::FISICA GERAL |
title_short |
Estudo das propriedades ópticas de filmes finos e poços quânticos de GaAsPN/GaPN |
title_full |
Estudo das propriedades ópticas de filmes finos e poços quânticos de GaAsPN/GaPN |
title_fullStr |
Estudo das propriedades ópticas de filmes finos e poços quânticos de GaAsPN/GaPN |
title_full_unstemmed |
Estudo das propriedades ópticas de filmes finos e poços quânticos de GaAsPN/GaPN |
title_sort |
Estudo das propriedades ópticas de filmes finos e poços quânticos de GaAsPN/GaPN |
author |
Covre, Felipe Soares |
author_facet |
Covre, Felipe Soares |
author_role |
author |
dc.contributor.authorlattes.por.fl_str_mv |
http://lattes.cnpq.br/0605656438457962 |
dc.contributor.author.fl_str_mv |
Covre, Felipe Soares |
dc.contributor.advisor1.fl_str_mv |
Galeti, Helder Vinícius Avanço |
dc.contributor.advisor1Lattes.fl_str_mv |
http://lattes.cnpq.br/3876752605313288 |
dc.contributor.authorID.fl_str_mv |
8476d2ed-46d3-4b40-bd99-8422361b2c2b |
contributor_str_mv |
Galeti, Helder Vinícius Avanço |
dc.subject.por.fl_str_mv |
GaAsPN Semicondutor III-V Fotoluminescência |
topic |
GaAsPN Semicondutor III-V Fotoluminescência III-V Semiconductor Photoluminescence CIENCIAS EXATAS E DA TERRA::FISICA::FISICA GERAL |
dc.subject.eng.fl_str_mv |
III-V Semiconductor Photoluminescence |
dc.subject.cnpq.fl_str_mv |
CIENCIAS EXATAS E DA TERRA::FISICA::FISICA GERAL |
description |
Diluted nitride III-V semiconductor leagues have physical properties that make them interesting for applications on optoelectronic devices. The possibility to lattice matching GaAsPN with silicon makes this semiconductor interesting for studies. In this dissertation we investigated the optical and magneto optical properties of semiconductors nanostructures of the type GaP(N)/GaAsPN. Mesures of photoluminescence (PL), photoluminescence excitation (PLE) and magneto photoluminescence (Magneto-PL) under high fields (B≤ 15T) were performed in films of GaAsPN and multiple quantum wells (MQW) of GaAsPN/GaPN. We have studied localizations effects with measures of diamagnetic shift, stoke shift and the dependence of photoluminescence peak with temperature. We observed a negative diamagnetic shift for some samples, which is an anomalous effect in these systems. It was also seen a red shift of the PL peak when the MQW samples suffered a thermal treatment. Analyzing the spin polarization properties of this material, utilizing magneto photoluminescence resolved with circular polarization, we observed polarization of the samples as high as 30% on fields of 15T. |
publishDate |
2016 |
dc.date.issued.fl_str_mv |
2016-09-08 |
dc.date.accessioned.fl_str_mv |
2017-01-16T16:14:17Z |
dc.date.available.fl_str_mv |
2017-01-16T16:14:17Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/masterThesis |
format |
masterThesis |
status_str |
publishedVersion |
dc.identifier.citation.fl_str_mv |
COVRE, Felipe Soares. Estudo das propriedades ópticas de filmes finos e poços quânticos de GaAsPN/GaPN. 2016. Dissertação (Mestrado em Física) – Universidade Federal de São Carlos, São Carlos, 2016. Disponível em: https://repositorio.ufscar.br/handle/ufscar/8411. |
dc.identifier.uri.fl_str_mv |
https://repositorio.ufscar.br/handle/ufscar/8411 |
identifier_str_mv |
COVRE, Felipe Soares. Estudo das propriedades ópticas de filmes finos e poços quânticos de GaAsPN/GaPN. 2016. Dissertação (Mestrado em Física) – Universidade Federal de São Carlos, São Carlos, 2016. Disponível em: https://repositorio.ufscar.br/handle/ufscar/8411. |
url |
https://repositorio.ufscar.br/handle/ufscar/8411 |
dc.language.iso.fl_str_mv |
por |
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por |
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600 600 |
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36ce5ed5-5345-4b8c-a5da-481118887f30 |
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info:eu-repo/semantics/openAccess |
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openAccess |
dc.publisher.none.fl_str_mv |
Universidade Federal de São Carlos Câmpus São Carlos |
dc.publisher.program.fl_str_mv |
Programa de Pós-Graduação em Física - PPGF |
dc.publisher.initials.fl_str_mv |
UFSCar |
publisher.none.fl_str_mv |
Universidade Federal de São Carlos Câmpus São Carlos |
dc.source.none.fl_str_mv |
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