Development of seminconductor nanowire materials for electronic and photonics applications
Autor(a) principal: | |
---|---|
Data de Publicação: | 2019 |
Tipo de documento: | Tese |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFSCAR |
Texto Completo: | https://repositorio.ufscar.br/handle/ufscar/14160 |
Resumo: | The thesis is concerned with study of GaAs nanowires fabricated on Si substrate. The possibility of growing III-V semiconductor materials directly on silicon in the form of nanowires is an attractive route to the integration of microelectronic, photonic and optoelectronic technologies. To this end, development of functional heterostructure require effective and controllable doping but the dopant incorporation mechanisms involved in nanowire growth can be quite different from the well-established semiconductors thin film technology. The interplay of the different dopant incorporation mechanisms and the competition between axial and radial growth can result in dopant concentration gradients in the nanowires. As a key technology development enabling the study of transport properties in nanowires, a method for fabricating electrical contacts on single NWs using electron- beam lithography is reported. On the other hand, the reduced dimensions and the quasi one-dimensional nanowire geometry are challenging factors for the fabrication of electrical contacts in the correct geometry for Hall effect measurement, which is traditionally used in planar film to determine the dopant concentration and carriers mobility. Therefore, alternative techniques were employed to gain an understanding of the dopant incorporation mechanisms. To this end, Raman spectroscopy and current-voltage analysis on single-nanowire were used to estimate the spatial distribution of the Be and Te dopants along the axial direction of GaAs nanowires. The study reveals that the dopant incorporation mechanisms are strongly affected by the growth conditions for both p-type and n-type GaAs nanowires, resulting in gradients of dopant concentration along the nanowires. Besides the carrier transport properties, the waveguide properties of semiconductor nanowires were explored in the area of chiral sensing and emission of circularly polarized light. By fabricating asymmetric gold layers deposited on the nanowires sidewalls and under the adequate experimental conditions an extrinsic optical chirality configuration is achieved. The results show a strong chiral behavior in both absorption and emission of the partially Au-coated nanowires, and paves the way for applications such as chiral sensing and emitting devices. |
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Piton, Marcelo RizzoGobato, Yara Galvãohttp://lattes.cnpq.br/7558531056409406Guina, Mirceahttp://lattes.cnpq.br/291366501321121928ec95e7-7473-4ccc-88f3-aaf22ca0a6c52021-04-21T17:38:32Z2021-04-21T17:38:32Z2019-12-05PITON, Marcelo Rizzo. Development of seminconductor nanowire materials for electronic and photonics applications. 2019. Tese (Doutorado em Física) – Universidade Federal de São Carlos, São Carlos, 2019. Disponível em: https://repositorio.ufscar.br/handle/ufscar/14160.https://repositorio.ufscar.br/handle/ufscar/14160The thesis is concerned with study of GaAs nanowires fabricated on Si substrate. The possibility of growing III-V semiconductor materials directly on silicon in the form of nanowires is an attractive route to the integration of microelectronic, photonic and optoelectronic technologies. To this end, development of functional heterostructure require effective and controllable doping but the dopant incorporation mechanisms involved in nanowire growth can be quite different from the well-established semiconductors thin film technology. The interplay of the different dopant incorporation mechanisms and the competition between axial and radial growth can result in dopant concentration gradients in the nanowires. As a key technology development enabling the study of transport properties in nanowires, a method for fabricating electrical contacts on single NWs using electron- beam lithography is reported. On the other hand, the reduced dimensions and the quasi one-dimensional nanowire geometry are challenging factors for the fabrication of electrical contacts in the correct geometry for Hall effect measurement, which is traditionally used in planar film to determine the dopant concentration and carriers mobility. Therefore, alternative techniques were employed to gain an understanding of the dopant incorporation mechanisms. To this end, Raman spectroscopy and current-voltage analysis on single-nanowire were used to estimate the spatial distribution of the Be and Te dopants along the axial direction of GaAs nanowires. The study reveals that the dopant incorporation mechanisms are strongly affected by the growth conditions for both p-type and n-type GaAs nanowires, resulting in gradients of dopant concentration along the nanowires. Besides the carrier transport properties, the waveguide properties of semiconductor nanowires were explored in the area of chiral sensing and emission of circularly polarized light. By fabricating asymmetric gold layers deposited on the nanowires sidewalls and under the adequate experimental conditions an extrinsic optical chirality configuration is achieved. The results show a strong chiral behavior in both absorption and emission of the partially Au-coated nanowires, and paves the way for applications such as chiral sensing and emitting devices.Neste trabalho, realizamos um estudo sistemático das propriedades óticas, elétricas e estruturais de nanofios de GaAs dopados crescidos por epitaxia por feixes moleculares em substratos de Si. A possibilidade de crescer materiais semiconductores III-V na forma de nanofiosdiretamente sobre silício é uma rota de significativo interesse para a integração tecnológica nas áreas da microeletrônica, fotônica e optoeletrônica. Além disso, o desenvolvimento de heteroestruturas funcionais requer um processo de dopagem efetivo e controlável. No entanto, os mecanismos de incorporação de dopantes envolvidos no crescimento de nanofios podem ser diferentes dos mecanismos já conhecidos para filmes finos semicondutores. De forma geral, a combinação dos diferentes mecanismos de incorporação de dopantes e a competição entre crescimento axial e radial podem resultar em um gradiente de concentração de dopantes nesses nanofios. O desenvolvimento de uma metodologia para fabricação de contatos elétricos em um único nanofio, utilizando litografia por feixe de elétrons, é um elemento chave para a investigação das propriedades de transporte eletrônico em nanofios. Por outro lado, as dimensões reduzidas e a quase uni-dimensionalidade dos nanofios são fatores desafiadores para a fabricação de contatos elétricos na geometria adequada para medidas de efeito Hall, tradicionalmente utilizada em filmes finos para determinar a concentração de dopantes e a mobilidade dos portadores de carga. Desta forma, nesta tese foram aplicadas técnicas experimentais alternativas para investigar os diversos mecanismos de incorporação de dopantes nesses sistemas. Dentre elas, utilizamos espectroscopia Raman e medidas de corrente elétrica em função da voltagem aplicada em nanofios individuais para estimar a distribuição espacial dos dopantes Be e Te ao longo da direção axial de nanofios de GaAs. Observamos que os mecanismos de incorporação de dopantes nesses sistemas são fortemente afetados pelas condições de crescimentos para ambos nanofios de GaAs, tipo-p e tip-n, levando à presença de um gradiente na concentração de dopantes ao longo do comprimento dos nanofios. x Além das propriedades de transporte eletrônico, as propriedades de guia-de-onda de nanofios semicondutores também foram exploradas para detecção quiral e emissão de luz circularmente polarizada nesses sistemas. Para isso, utilizamos camadas de Au assimétricas depositadas na superfície lateral dos nanofios, resultando na observação de quiralidade óptica extrínseca. Os resultados evidenciam um forte comportamento quiral tanto na absorção como na emissão de luz de nanofios parcialmente cobertos com Au, criando novas possibilidades para aplicações na área de dispositivos baseados em detecção e emissão quiral.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)CAPES: 88887.100549/2015-00CNPq: 88887.100549/2015-00engUniversidade Federal de São CarlosCâmpus São CarlosPrograma de Pós-Graduação em Física - PPGFUFSCarAttribution-NonCommercial-NoDerivs 3.0 Brazilhttp://creativecommons.org/licenses/by-nc-nd/3.0/br/info:eu-repo/semantics/openAccessSemicondutoresNanofiosCIENCIAS EXATAS E DA TERRA::FISICADevelopment of seminconductor nanowire materials for electronic and photonics applicationsDesenvolvimento de nanofios semicondutores para aplicações em eletrônica e fotonônicainfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/doctoralThesis95c329bf-cc95-483d-b980-ef5b5a94a0a1reponame:Repositório Institucional da UFSCARinstname:Universidade Federal de São Carlos (UFSCAR)instacron:UFSCARORIGINALthesis-MarceloRizzoPiton_folha de aprovacao.pdfthesis-MarceloRizzoPiton_folha de aprovacao.pdfTese desenvolvida em acordo de dupla titulação. 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dc.title.eng.fl_str_mv |
Development of seminconductor nanowire materials for electronic and photonics applications |
dc.title.alternative.por.fl_str_mv |
Desenvolvimento de nanofios semicondutores para aplicações em eletrônica e fotonônica |
title |
Development of seminconductor nanowire materials for electronic and photonics applications |
spellingShingle |
Development of seminconductor nanowire materials for electronic and photonics applications Piton, Marcelo Rizzo Semicondutores Nanofios CIENCIAS EXATAS E DA TERRA::FISICA |
title_short |
Development of seminconductor nanowire materials for electronic and photonics applications |
title_full |
Development of seminconductor nanowire materials for electronic and photonics applications |
title_fullStr |
Development of seminconductor nanowire materials for electronic and photonics applications |
title_full_unstemmed |
Development of seminconductor nanowire materials for electronic and photonics applications |
title_sort |
Development of seminconductor nanowire materials for electronic and photonics applications |
author |
Piton, Marcelo Rizzo |
author_facet |
Piton, Marcelo Rizzo |
author_role |
author |
dc.contributor.authorlattes.por.fl_str_mv |
http://lattes.cnpq.br/2913665013211219 |
dc.contributor.author.fl_str_mv |
Piton, Marcelo Rizzo |
dc.contributor.advisor1.fl_str_mv |
Gobato, Yara Galvão |
dc.contributor.advisor1Lattes.fl_str_mv |
http://lattes.cnpq.br/7558531056409406 |
dc.contributor.advisor-co1.fl_str_mv |
Guina, Mircea |
dc.contributor.authorID.fl_str_mv |
28ec95e7-7473-4ccc-88f3-aaf22ca0a6c5 |
contributor_str_mv |
Gobato, Yara Galvão Guina, Mircea |
dc.subject.por.fl_str_mv |
Semicondutores Nanofios |
topic |
Semicondutores Nanofios CIENCIAS EXATAS E DA TERRA::FISICA |
dc.subject.cnpq.fl_str_mv |
CIENCIAS EXATAS E DA TERRA::FISICA |
description |
The thesis is concerned with study of GaAs nanowires fabricated on Si substrate. The possibility of growing III-V semiconductor materials directly on silicon in the form of nanowires is an attractive route to the integration of microelectronic, photonic and optoelectronic technologies. To this end, development of functional heterostructure require effective and controllable doping but the dopant incorporation mechanisms involved in nanowire growth can be quite different from the well-established semiconductors thin film technology. The interplay of the different dopant incorporation mechanisms and the competition between axial and radial growth can result in dopant concentration gradients in the nanowires. As a key technology development enabling the study of transport properties in nanowires, a method for fabricating electrical contacts on single NWs using electron- beam lithography is reported. On the other hand, the reduced dimensions and the quasi one-dimensional nanowire geometry are challenging factors for the fabrication of electrical contacts in the correct geometry for Hall effect measurement, which is traditionally used in planar film to determine the dopant concentration and carriers mobility. Therefore, alternative techniques were employed to gain an understanding of the dopant incorporation mechanisms. To this end, Raman spectroscopy and current-voltage analysis on single-nanowire were used to estimate the spatial distribution of the Be and Te dopants along the axial direction of GaAs nanowires. The study reveals that the dopant incorporation mechanisms are strongly affected by the growth conditions for both p-type and n-type GaAs nanowires, resulting in gradients of dopant concentration along the nanowires. Besides the carrier transport properties, the waveguide properties of semiconductor nanowires were explored in the area of chiral sensing and emission of circularly polarized light. By fabricating asymmetric gold layers deposited on the nanowires sidewalls and under the adequate experimental conditions an extrinsic optical chirality configuration is achieved. The results show a strong chiral behavior in both absorption and emission of the partially Au-coated nanowires, and paves the way for applications such as chiral sensing and emitting devices. |
publishDate |
2019 |
dc.date.issued.fl_str_mv |
2019-12-05 |
dc.date.accessioned.fl_str_mv |
2021-04-21T17:38:32Z |
dc.date.available.fl_str_mv |
2021-04-21T17:38:32Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/doctoralThesis |
format |
doctoralThesis |
status_str |
publishedVersion |
dc.identifier.citation.fl_str_mv |
PITON, Marcelo Rizzo. Development of seminconductor nanowire materials for electronic and photonics applications. 2019. Tese (Doutorado em Física) – Universidade Federal de São Carlos, São Carlos, 2019. Disponível em: https://repositorio.ufscar.br/handle/ufscar/14160. |
dc.identifier.uri.fl_str_mv |
https://repositorio.ufscar.br/handle/ufscar/14160 |
identifier_str_mv |
PITON, Marcelo Rizzo. Development of seminconductor nanowire materials for electronic and photonics applications. 2019. Tese (Doutorado em Física) – Universidade Federal de São Carlos, São Carlos, 2019. Disponível em: https://repositorio.ufscar.br/handle/ufscar/14160. |
url |
https://repositorio.ufscar.br/handle/ufscar/14160 |
dc.language.iso.fl_str_mv |
eng |
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eng |
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95c329bf-cc95-483d-b980-ef5b5a94a0a1 |
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Attribution-NonCommercial-NoDerivs 3.0 Brazil http://creativecommons.org/licenses/by-nc-nd/3.0/br/ info:eu-repo/semantics/openAccess |
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Attribution-NonCommercial-NoDerivs 3.0 Brazil http://creativecommons.org/licenses/by-nc-nd/3.0/br/ |
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openAccess |
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Universidade Federal de São Carlos Câmpus São Carlos |
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Programa de Pós-Graduação em Física - PPGF |
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UFSCar |
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Universidade Federal de São Carlos Câmpus São Carlos |
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UFSCAR |
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