The memristive response in solids
Autor(a) principal: | |
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Data de Publicação: | 2023 |
Tipo de documento: | Dissertação |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFSCAR |
Texto Completo: | https://repositorio.ufscar.br/handle/ufscar/18448 |
Resumo: | In this Master Thesis, we have investigated basic ingredients of the theory of solid state transport, namely the Drude like conductivity and the activation of nonequilibrium charge carriers subjected to a relaxation time, concluding that they are sufficient conditions for a memristive response. These findings point to the natural emergence of memory that, if discernible under adequate set of driving inputs, turns to be the rule and not the exception, with contrasting signatures according to symmetry constraints, either built-in or induced by external factors. Explicit analytical expressions for conductance and content are presented, unveiling very concise and accessible correlations between general intrinsic microscopic parameters such as relaxation times, activation energies, and efficiencies (encountered throughout various fields in Physics) with external drives: voltage pulses, temperature, illumination, etc. Four toy models under different applied bias: sinusoidal and triangular, have been investigated, providing insights about the memory formation, as well as the expressions mentioned above. The model has also been successfully applied to predict and explain memory features in samples based on ZnO thin films that were fabricated and characterized by colleagues, reinforcing its validity. The theory allowed providing values for the system’s fundamental parameters, such as its relaxation time. Finally, the perspectives and directions of the forthcoming research tasks, to be continued on a PhD, are presented, pointing to the extension of the theoretical results by introducing asymmetries in the model and by exploring the topology of the current-voltage characteristics. The model can be extended to other physical systems, such as those based on quantum dots, and by applying the robust mechanism thus far constructed to study, explain, and predict results in experimental realizations, such as in oxide thin films. |
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Silva, Rafael Schio WengenrothRichard, Victor Lopezhttp://lattes.cnpq.br/4492188799583104http://lattes.cnpq.br/2491908553625300https://orcid.org/0000-0002-9796-2059https://orcid.org/0000-0002-7897-3860277c92ea-eb8b-41a3-a08d-3a6987c9de0f2023-08-28T11:23:30Z2023-08-28T11:23:30Z2023-08-07SILVA, Rafael Schio Wengenroth. The memristive response in solids. 2023. Dissertação (Mestrado em Física) – Universidade Federal de São Carlos, São Carlos, 2023. Disponível em: https://repositorio.ufscar.br/handle/ufscar/18448.https://repositorio.ufscar.br/handle/ufscar/18448In this Master Thesis, we have investigated basic ingredients of the theory of solid state transport, namely the Drude like conductivity and the activation of nonequilibrium charge carriers subjected to a relaxation time, concluding that they are sufficient conditions for a memristive response. These findings point to the natural emergence of memory that, if discernible under adequate set of driving inputs, turns to be the rule and not the exception, with contrasting signatures according to symmetry constraints, either built-in or induced by external factors. Explicit analytical expressions for conductance and content are presented, unveiling very concise and accessible correlations between general intrinsic microscopic parameters such as relaxation times, activation energies, and efficiencies (encountered throughout various fields in Physics) with external drives: voltage pulses, temperature, illumination, etc. Four toy models under different applied bias: sinusoidal and triangular, have been investigated, providing insights about the memory formation, as well as the expressions mentioned above. The model has also been successfully applied to predict and explain memory features in samples based on ZnO thin films that were fabricated and characterized by colleagues, reinforcing its validity. The theory allowed providing values for the system’s fundamental parameters, such as its relaxation time. Finally, the perspectives and directions of the forthcoming research tasks, to be continued on a PhD, are presented, pointing to the extension of the theoretical results by introducing asymmetries in the model and by exploring the topology of the current-voltage characteristics. The model can be extended to other physical systems, such as those based on quantum dots, and by applying the robust mechanism thus far constructed to study, explain, and predict results in experimental realizations, such as in oxide thin films.Nesta dissertação de mestrado, investigamos os ingredientes básicos da teoria de transporte no estado sólido, isto é, a teoria de condutividade do tipo Drude e a ativação de portadores carregados fora do equilíbrio sujeitos a um tempo de relaxação; concluindo que estas são condições suficientes para uma resposta memristiva. Essas descobertas apontam para a formação natural de memória que, se discernível sob um conjunto adequado de estímulos, passa a ser a regra e não a exceção, apresentando assinaturas contrastantes de acordo com vínculos de simetria, sejam eles inerentes ou induzidos por fatores externos. Expressões analíticas explícitas para a condutância e área das histereses são apresentadas, revelando correlações muito concisas e acessíveis entre parâmetros microscópicos intrínsecos gerais, tais como: tempos de relaxação, energias de ativação, e eficiências (encontrados em vários campos da Física) com estímulos externos: pulsos de voltagem, temperatura, iluminação, etc. Quatro modelos de estudo sob a aplicação de diferentes voltagens foram investigados, sendo elas senoidais e triangulares, fornecendo elementos sobre a formação de memória, assim como as expressões mencionadas acima. O modelo também foi aplicado com sucesso para prever e explicar características de memória em amostras baseadas em filmes finos de ZnO que foram fabricados e caracterizados por colegas, reforçando sua validade. A teoria permitiu o fornecimento de valores para parâmetros fundamentais do sistema, como seu tempo de relaxação. Finalmente, as perspectivas e rumos das tarefas de pesquisa que estão por vir, a serem continuadas em um doutorado, são apresentadas e apontam para a extensão teórica dos resultados por meio da introdução de assimetrias no modelo e para o estudo topológico da relação entre corrente e voltagem. O modelo pode ser estendido a outros sistemas físicos, tais como os que se baseiam em pontos quânticos, e por meio da aplicação do robusto arcabouço construído até o momento pode-se estuda-los, explica-los, e prever resultados em experimentos, tais como aqueles em filmes finos de óxidos.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)131951/2021-1engUniversidade Federal de São CarlosCâmpus São CarlosPrograma de Pós-Graduação em Física - PPGFUFSCarAttribution-NonCommercial-NoDerivs 3.0 Brazilhttp://creativecommons.org/licenses/by-nc-nd/3.0/br/info:eu-repo/semantics/openAccessMemdevicesMemoryMemristorsNon-equilibrium carriersDispositivos com memóriaMemóriaMemristoresPortadores de não-equilíbrioCIENCIAS EXATAS E DA TERRA::FISICA::FISICA DA MATERIA CONDENSADA::TRANSP.ELETRONICOS E PROP. ELETRICAS DE SUPERFICIES;INTERFACES E PELICULASCIENCIAS EXATAS E DA TERRA::FISICA::FISICA DA MATERIA CONDENSADACIENCIAS EXATAS E DA TERRA::FISICA::FISICA GERALThe memristive response in solidsA resposta memristva em sólidosinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/masterThesis6006000e83f8e9-1f3e-4da0-ab6f-d3476856dbe0reponame:Repositório Institucional da UFSCARinstname:Universidade Federal de São Carlos (UFSCAR)instacron:UFSCARORIGINALThe Memristive Response in Solids _ Rafael Schio.pdfThe Memristive Response in Solids _ Rafael Schio.pdfDissertação de Mestrado intitulada: "The Memristive Response in Solids"application/pdf6380596https://repositorio.ufscar.br/bitstream/ufscar/18448/1/The%20Memristive%20Response%20in%20Solids%20_%20Rafael%20Schio.pdfe0a2dfb397505d92254a81b995488f96MD51CC-LICENSElicense_rdflicense_rdfapplication/rdf+xml; charset=utf-8810https://repositorio.ufscar.br/bitstream/ufscar/18448/4/license_rdff337d95da1fce0a22c77480e5e9a7aecMD54TEXTThe Memristive Response in Solids _ Rafael Schio.pdf.txtThe Memristive Response in Solids _ Rafael Schio.pdf.txtExtracted texttext/plain110794https://repositorio.ufscar.br/bitstream/ufscar/18448/5/The%20Memristive%20Response%20in%20Solids%20_%20Rafael%20Schio.pdf.txt9e550c10850de7d6e64cafba81a78bd0MD55ufscar/184482024-05-14 18:29:25.41oai:repositorio.ufscar.br:ufscar/18448Repositório InstitucionalPUBhttps://repositorio.ufscar.br/oai/requestopendoar:43222024-05-14T18:29:25Repositório Institucional da UFSCAR - Universidade Federal de São Carlos (UFSCAR)false |
dc.title.eng.fl_str_mv |
The memristive response in solids |
dc.title.alternative.por.fl_str_mv |
A resposta memristva em sólidos |
title |
The memristive response in solids |
spellingShingle |
The memristive response in solids Silva, Rafael Schio Wengenroth Memdevices Memory Memristors Non-equilibrium carriers Dispositivos com memória Memória Memristores Portadores de não-equilíbrio CIENCIAS EXATAS E DA TERRA::FISICA::FISICA DA MATERIA CONDENSADA::TRANSP.ELETRONICOS E PROP. ELETRICAS DE SUPERFICIES;INTERFACES E PELICULAS CIENCIAS EXATAS E DA TERRA::FISICA::FISICA DA MATERIA CONDENSADA CIENCIAS EXATAS E DA TERRA::FISICA::FISICA GERAL |
title_short |
The memristive response in solids |
title_full |
The memristive response in solids |
title_fullStr |
The memristive response in solids |
title_full_unstemmed |
The memristive response in solids |
title_sort |
The memristive response in solids |
author |
Silva, Rafael Schio Wengenroth |
author_facet |
Silva, Rafael Schio Wengenroth |
author_role |
author |
dc.contributor.authorlattes.por.fl_str_mv |
http://lattes.cnpq.br/2491908553625300 |
dc.contributor.authororcid.por.fl_str_mv |
https://orcid.org/0000-0002-9796-2059 |
dc.contributor.advisor1orcid.por.fl_str_mv |
https://orcid.org/0000-0002-7897-3860 |
dc.contributor.author.fl_str_mv |
Silva, Rafael Schio Wengenroth |
dc.contributor.advisor1.fl_str_mv |
Richard, Victor Lopez |
dc.contributor.advisor1Lattes.fl_str_mv |
http://lattes.cnpq.br/4492188799583104 |
dc.contributor.authorID.fl_str_mv |
277c92ea-eb8b-41a3-a08d-3a6987c9de0f |
contributor_str_mv |
Richard, Victor Lopez |
dc.subject.eng.fl_str_mv |
Memdevices Memory Memristors Non-equilibrium carriers |
topic |
Memdevices Memory Memristors Non-equilibrium carriers Dispositivos com memória Memória Memristores Portadores de não-equilíbrio CIENCIAS EXATAS E DA TERRA::FISICA::FISICA DA MATERIA CONDENSADA::TRANSP.ELETRONICOS E PROP. ELETRICAS DE SUPERFICIES;INTERFACES E PELICULAS CIENCIAS EXATAS E DA TERRA::FISICA::FISICA DA MATERIA CONDENSADA CIENCIAS EXATAS E DA TERRA::FISICA::FISICA GERAL |
dc.subject.por.fl_str_mv |
Dispositivos com memória Memória Memristores Portadores de não-equilíbrio |
dc.subject.cnpq.fl_str_mv |
CIENCIAS EXATAS E DA TERRA::FISICA::FISICA DA MATERIA CONDENSADA::TRANSP.ELETRONICOS E PROP. ELETRICAS DE SUPERFICIES;INTERFACES E PELICULAS CIENCIAS EXATAS E DA TERRA::FISICA::FISICA DA MATERIA CONDENSADA CIENCIAS EXATAS E DA TERRA::FISICA::FISICA GERAL |
description |
In this Master Thesis, we have investigated basic ingredients of the theory of solid state transport, namely the Drude like conductivity and the activation of nonequilibrium charge carriers subjected to a relaxation time, concluding that they are sufficient conditions for a memristive response. These findings point to the natural emergence of memory that, if discernible under adequate set of driving inputs, turns to be the rule and not the exception, with contrasting signatures according to symmetry constraints, either built-in or induced by external factors. Explicit analytical expressions for conductance and content are presented, unveiling very concise and accessible correlations between general intrinsic microscopic parameters such as relaxation times, activation energies, and efficiencies (encountered throughout various fields in Physics) with external drives: voltage pulses, temperature, illumination, etc. Four toy models under different applied bias: sinusoidal and triangular, have been investigated, providing insights about the memory formation, as well as the expressions mentioned above. The model has also been successfully applied to predict and explain memory features in samples based on ZnO thin films that were fabricated and characterized by colleagues, reinforcing its validity. The theory allowed providing values for the system’s fundamental parameters, such as its relaxation time. Finally, the perspectives and directions of the forthcoming research tasks, to be continued on a PhD, are presented, pointing to the extension of the theoretical results by introducing asymmetries in the model and by exploring the topology of the current-voltage characteristics. The model can be extended to other physical systems, such as those based on quantum dots, and by applying the robust mechanism thus far constructed to study, explain, and predict results in experimental realizations, such as in oxide thin films. |
publishDate |
2023 |
dc.date.accessioned.fl_str_mv |
2023-08-28T11:23:30Z |
dc.date.available.fl_str_mv |
2023-08-28T11:23:30Z |
dc.date.issued.fl_str_mv |
2023-08-07 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/masterThesis |
format |
masterThesis |
status_str |
publishedVersion |
dc.identifier.citation.fl_str_mv |
SILVA, Rafael Schio Wengenroth. The memristive response in solids. 2023. Dissertação (Mestrado em Física) – Universidade Federal de São Carlos, São Carlos, 2023. Disponível em: https://repositorio.ufscar.br/handle/ufscar/18448. |
dc.identifier.uri.fl_str_mv |
https://repositorio.ufscar.br/handle/ufscar/18448 |
identifier_str_mv |
SILVA, Rafael Schio Wengenroth. The memristive response in solids. 2023. Dissertação (Mestrado em Física) – Universidade Federal de São Carlos, São Carlos, 2023. Disponível em: https://repositorio.ufscar.br/handle/ufscar/18448. |
url |
https://repositorio.ufscar.br/handle/ufscar/18448 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
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600 600 |
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0e83f8e9-1f3e-4da0-ab6f-d3476856dbe0 |
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Attribution-NonCommercial-NoDerivs 3.0 Brazil http://creativecommons.org/licenses/by-nc-nd/3.0/br/ info:eu-repo/semantics/openAccess |
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Attribution-NonCommercial-NoDerivs 3.0 Brazil http://creativecommons.org/licenses/by-nc-nd/3.0/br/ |
eu_rights_str_mv |
openAccess |
dc.publisher.none.fl_str_mv |
Universidade Federal de São Carlos Câmpus São Carlos |
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Programa de Pós-Graduação em Física - PPGF |
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UFSCar |
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Universidade Federal de São Carlos Câmpus São Carlos |
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