Caracterização das propriedades ópticas e de spin de poços quânticos de InGaAsN/GaAs
Autor(a) principal: | |
---|---|
Data de Publicação: | 2015 |
Tipo de documento: | Dissertação |
Idioma: | por |
Título da fonte: | Repositório Institucional da UFSCAR |
Texto Completo: | https://repositorio.ufscar.br/handle/ufscar/5072 |
Resumo: | In this work, it was investigated the optical and magneto-optical properties of In- GaAsN/GaAs and InGaAs/GaAs double quantum wells. It was performed a systematic experimental study of photoluminescence (PL) as a function of temperature, excitation power, polarization and applied magnetic field. It was investigated the effect of incorporation of N in these alloys, the thermal treatment effect, and the role of carrier localization effect on the optical and spin properties of these materials. The study of the PL as a function of temperature evidenced effects associated with the carriers' localization by defects incorporated by growth conditions at low temperatures. This effect was more pronounced for samples containing N. In optical emission measurements with applied magnetic field, it was found that the N samples presented lower diamagnetic shift, implying in larger carriers localization by defects, so corroborating the results for dependence of PL with temperature. Another important result was the reduction of the diamagnetic shift for samples without N after the thermal treatment, implying that, besides increasing the intensity of PL, the thermal treatment is creating defects responsible for the carriers' localization. The spin filter effect mediated by defects, with and without N, was investigated using photoluminescence technique with circularly polarized excitation. It was observed that the thermally treated samples showed a higher degree of circular polarization. This polarization increase was associated with the increased defect density after the thermal treatment and it is consistent with the results obtained for the diamagnetic shift. In general, the obtained results showed that such materials are interesting for possible applications like spin filters at room temperature. |
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Ballottin, Mariana VictóriaGobato, Yara Galvãohttp://lattes.cnpq.br/7558531056409406http://lattes.cnpq.br/8678651662772647cd7fece8-5a5e-423d-9baf-341c0d42b1af2016-06-02T20:16:54Z2015-04-142016-06-02T20:16:54Z2015-03-30BALLOTTIN, Mariana Victória. Caracterização das propriedades ópticas e de spin de poços quânticos de InGaAsN/GaAs. 2015. 66 f. Dissertação (Mestrado em Ciências Exatas e da Terra) - Universidade Federal de São Carlos, São Carlos, 2015.https://repositorio.ufscar.br/handle/ufscar/5072In this work, it was investigated the optical and magneto-optical properties of In- GaAsN/GaAs and InGaAs/GaAs double quantum wells. It was performed a systematic experimental study of photoluminescence (PL) as a function of temperature, excitation power, polarization and applied magnetic field. It was investigated the effect of incorporation of N in these alloys, the thermal treatment effect, and the role of carrier localization effect on the optical and spin properties of these materials. The study of the PL as a function of temperature evidenced effects associated with the carriers' localization by defects incorporated by growth conditions at low temperatures. This effect was more pronounced for samples containing N. In optical emission measurements with applied magnetic field, it was found that the N samples presented lower diamagnetic shift, implying in larger carriers localization by defects, so corroborating the results for dependence of PL with temperature. Another important result was the reduction of the diamagnetic shift for samples without N after the thermal treatment, implying that, besides increasing the intensity of PL, the thermal treatment is creating defects responsible for the carriers' localization. The spin filter effect mediated by defects, with and without N, was investigated using photoluminescence technique with circularly polarized excitation. It was observed that the thermally treated samples showed a higher degree of circular polarization. This polarization increase was associated with the increased defect density after the thermal treatment and it is consistent with the results obtained for the diamagnetic shift. In general, the obtained results showed that such materials are interesting for possible applications like spin filters at room temperature.Neste trabalho, investigou-se as propriedades ópticas e magneto-ópticas de poços quânticos duplos de InGaAsN/GaAs e de InGaAs/GaAs. Foi realizado um estudo experimental sistemático de fotoluminescência (PL) em função da temperatura, potência de excitação, polarização e campo magnético aplicado. Investigou-se o efeito da incorporação de N nessas ligas, o efeito do tratamento térmico e o papel de efeitos de localização de portadores nas propriedades ópticas e de spin desses materiais. O estudo da PL em função da temperatura evidenciou efeitos associados à localização de portadores por defeitos, incorporados pelas condições de crescimento em baixas temperaturas. Esse efeito foi mais acentuado para amostras contendo N. Nas medidas de emissão óptica com campo magnético aplicado verificou-se que as amostras com N apresentaram menor deslocamento diamagnético, implicando em uma maior localização de portadores por defeitos, corroborando então os resultados encontrados para dependência da PL com a temperatura. Outro resultado importante foi a diminuição do deslocamento diamagnético para amostras sem N após o tratamento térmico, implicando que, além de aumentar a intensidade de PL, o tratamento térmico está criando defeitos responsáveis pela localização de portadores. O efeito de filtro de spin mediado por defeitos, com e sem N, foi investigado utilizando a técnica de fotoluminescência usando como excitação luz circularmente polarizada. Observou-se que as amostras tratadas termicamente apresentaram maior grau de polarização circular. Esse aumento de polarização foi associado ao aumento da densidade de defeitos após o tratamento térmico e é consistente com os resultados obtidos para o deslocamento diamagnético. De forma geral, os resultados obtidos mostraram que tais materiais são interessantes para possíveis aplicações como filtros de spin a temperatura ambiente.Financiadora de Estudos e Projetosapplication/pdfporUniversidade Federal de São CarlosPrograma de Pós-Graduação em Física - PPGFUFSCarBRSemicondutoresSpinFotoluminescênciaPropriedades ópticasCIENCIAS EXATAS E DA TERRA::FISICACaracterização das propriedades ópticas e de spin de poços quânticos de InGaAsN/GaAsinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/masterThesis-1-195c329bf-cc95-483d-b980-ef5b5a94a0a1info:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFSCARinstname:Universidade Federal de São Carlos (UFSCAR)instacron:UFSCARORIGINAL6653.pdfapplication/pdf8392197https://repositorio.ufscar.br/bitstream/ufscar/5072/1/6653.pdf47e7d8530d1403285a4bd11d1045b932MD51TEXT6653.pdf.txt6653.pdf.txtExtracted texttext/plain0https://repositorio.ufscar.br/bitstream/ufscar/5072/2/6653.pdf.txtd41d8cd98f00b204e9800998ecf8427eMD52THUMBNAIL6653.pdf.jpg6653.pdf.jpgIM Thumbnailimage/jpeg5842https://repositorio.ufscar.br/bitstream/ufscar/5072/3/6653.pdf.jpg480b29b9677ac9d7962d566d9cc5d112MD53ufscar/50722023-09-18 18:31:35.469oai:repositorio.ufscar.br:ufscar/5072Repositório InstitucionalPUBhttps://repositorio.ufscar.br/oai/requestopendoar:43222023-09-18T18:31:35Repositório Institucional da UFSCAR - Universidade Federal de São Carlos (UFSCAR)false |
dc.title.por.fl_str_mv |
Caracterização das propriedades ópticas e de spin de poços quânticos de InGaAsN/GaAs |
title |
Caracterização das propriedades ópticas e de spin de poços quânticos de InGaAsN/GaAs |
spellingShingle |
Caracterização das propriedades ópticas e de spin de poços quânticos de InGaAsN/GaAs Ballottin, Mariana Victória Semicondutores Spin Fotoluminescência Propriedades ópticas CIENCIAS EXATAS E DA TERRA::FISICA |
title_short |
Caracterização das propriedades ópticas e de spin de poços quânticos de InGaAsN/GaAs |
title_full |
Caracterização das propriedades ópticas e de spin de poços quânticos de InGaAsN/GaAs |
title_fullStr |
Caracterização das propriedades ópticas e de spin de poços quânticos de InGaAsN/GaAs |
title_full_unstemmed |
Caracterização das propriedades ópticas e de spin de poços quânticos de InGaAsN/GaAs |
title_sort |
Caracterização das propriedades ópticas e de spin de poços quânticos de InGaAsN/GaAs |
author |
Ballottin, Mariana Victória |
author_facet |
Ballottin, Mariana Victória |
author_role |
author |
dc.contributor.authorlattes.por.fl_str_mv |
http://lattes.cnpq.br/8678651662772647 |
dc.contributor.author.fl_str_mv |
Ballottin, Mariana Victória |
dc.contributor.advisor1.fl_str_mv |
Gobato, Yara Galvão |
dc.contributor.advisor1Lattes.fl_str_mv |
http://lattes.cnpq.br/7558531056409406 |
dc.contributor.authorID.fl_str_mv |
cd7fece8-5a5e-423d-9baf-341c0d42b1af |
contributor_str_mv |
Gobato, Yara Galvão |
dc.subject.por.fl_str_mv |
Semicondutores Spin Fotoluminescência Propriedades ópticas |
topic |
Semicondutores Spin Fotoluminescência Propriedades ópticas CIENCIAS EXATAS E DA TERRA::FISICA |
dc.subject.cnpq.fl_str_mv |
CIENCIAS EXATAS E DA TERRA::FISICA |
description |
In this work, it was investigated the optical and magneto-optical properties of In- GaAsN/GaAs and InGaAs/GaAs double quantum wells. It was performed a systematic experimental study of photoluminescence (PL) as a function of temperature, excitation power, polarization and applied magnetic field. It was investigated the effect of incorporation of N in these alloys, the thermal treatment effect, and the role of carrier localization effect on the optical and spin properties of these materials. The study of the PL as a function of temperature evidenced effects associated with the carriers' localization by defects incorporated by growth conditions at low temperatures. This effect was more pronounced for samples containing N. In optical emission measurements with applied magnetic field, it was found that the N samples presented lower diamagnetic shift, implying in larger carriers localization by defects, so corroborating the results for dependence of PL with temperature. Another important result was the reduction of the diamagnetic shift for samples without N after the thermal treatment, implying that, besides increasing the intensity of PL, the thermal treatment is creating defects responsible for the carriers' localization. The spin filter effect mediated by defects, with and without N, was investigated using photoluminescence technique with circularly polarized excitation. It was observed that the thermally treated samples showed a higher degree of circular polarization. This polarization increase was associated with the increased defect density after the thermal treatment and it is consistent with the results obtained for the diamagnetic shift. In general, the obtained results showed that such materials are interesting for possible applications like spin filters at room temperature. |
publishDate |
2015 |
dc.date.available.fl_str_mv |
2015-04-14 2016-06-02T20:16:54Z |
dc.date.issued.fl_str_mv |
2015-03-30 |
dc.date.accessioned.fl_str_mv |
2016-06-02T20:16:54Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/masterThesis |
format |
masterThesis |
status_str |
publishedVersion |
dc.identifier.citation.fl_str_mv |
BALLOTTIN, Mariana Victória. Caracterização das propriedades ópticas e de spin de poços quânticos de InGaAsN/GaAs. 2015. 66 f. Dissertação (Mestrado em Ciências Exatas e da Terra) - Universidade Federal de São Carlos, São Carlos, 2015. |
dc.identifier.uri.fl_str_mv |
https://repositorio.ufscar.br/handle/ufscar/5072 |
identifier_str_mv |
BALLOTTIN, Mariana Victória. Caracterização das propriedades ópticas e de spin de poços quânticos de InGaAsN/GaAs. 2015. 66 f. Dissertação (Mestrado em Ciências Exatas e da Terra) - Universidade Federal de São Carlos, São Carlos, 2015. |
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https://repositorio.ufscar.br/handle/ufscar/5072 |
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Universidade Federal de São Carlos |
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Programa de Pós-Graduação em Física - PPGF |
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UFSCar |
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BR |
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Universidade Federal de São Carlos |
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