Propriedades ópticas de filmes semicondutores GaAsBi e GaSbBi
Autor(a) principal: | |
---|---|
Data de Publicação: | 2022 |
Tipo de documento: | Tese |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFSCAR |
Texto Completo: | https://repositorio.ufscar.br/handle/ufscar/16244 |
Resumo: | Bismuth-diluted III-V are interesting materials for possible applications in optoeletronic and spintronic devices. If we add a small amount of Bi in III-V materials, we observe a strong reduction in the band gap energy. In addition, it is expected that these materials present an important attenuation of Auger recombination for Bi concentrations higher than 10%. Therefore, these materials are good candidates for the development of optoelectronic devices in the near-infrared region. In this work, we have performed a systematic study of III-V materials with different Bi concentrations grown by molecular beam expitaxy (MBE) in different substrates. Particularly, we have investigated films GaSb(1-x) Bix grown on (100) GaSb substrates and n- and p-doped GaAs(1-x) Bix films grown on (100) and (311)B GaAs substrates. The GaSb(1-x) Bix films were investigated using high resolution XRD (HRXRD), AFM and Raman spectroscopy. We have observed that the GaSb(1-x) Bix films have a good crystalline quality. In addition, we have observed several Raman modes associated with GaSb, Bi clusters and GaBi. We have observed an important increase of Raman intensity depending on the Bi concentration and laser wavelength. This result was attributed to the resonant Raman effect. We have also investigated the GaAsBi samples using different techniques such as: HRXRD, Raman and low temperature photoluminescence (PL). We have observed that the incorporation of Bi in the n- and p-type doped samples were similar. However, these samples have shown important difference in the density of structural defects and non-radiative centers. This result indicates that the density of defects depends on the type of doping in GaAs(1-x) Bix and on the substrate orientation. In addition, we have observed that the sample grown on the GaAs (100) substrate has a compressive strain 2.7 times higher than the samples grown on the substrate GaAs (311)B. In general, our results evidence that both the amount of compressive strain and the density of defects depend on the substrate orientation and type of doping, which affects considerable the optical properties of GaAsBi thin films. |
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De Souza, DanieleGobato, Yara Galvãohttp://lattes.cnpq.br/7558531056409406Galeti, Helder Vinícius Avançohttp://lattes.cnpq.br/3876752605313288http://lattes.cnpq.br/606263151132976683de3075-92e9-46c3-9a64-d785c6d8468d2022-06-07T17:16:16Z2022-06-07T17:16:16Z2022-05-02DE SOUZA, Daniele. Propriedades ópticas de filmes semicondutores GaAsBi e GaSbBi. 2022. Tese (Doutorado em Física) – Universidade Federal de São Carlos, São Carlos, 2022. Disponível em: https://repositorio.ufscar.br/handle/ufscar/16244.https://repositorio.ufscar.br/handle/ufscar/16244Bismuth-diluted III-V are interesting materials for possible applications in optoeletronic and spintronic devices. If we add a small amount of Bi in III-V materials, we observe a strong reduction in the band gap energy. In addition, it is expected that these materials present an important attenuation of Auger recombination for Bi concentrations higher than 10%. Therefore, these materials are good candidates for the development of optoelectronic devices in the near-infrared region. In this work, we have performed a systematic study of III-V materials with different Bi concentrations grown by molecular beam expitaxy (MBE) in different substrates. Particularly, we have investigated films GaSb(1-x) Bix grown on (100) GaSb substrates and n- and p-doped GaAs(1-x) Bix films grown on (100) and (311)B GaAs substrates. The GaSb(1-x) Bix films were investigated using high resolution XRD (HRXRD), AFM and Raman spectroscopy. We have observed that the GaSb(1-x) Bix films have a good crystalline quality. In addition, we have observed several Raman modes associated with GaSb, Bi clusters and GaBi. We have observed an important increase of Raman intensity depending on the Bi concentration and laser wavelength. This result was attributed to the resonant Raman effect. We have also investigated the GaAsBi samples using different techniques such as: HRXRD, Raman and low temperature photoluminescence (PL). We have observed that the incorporation of Bi in the n- and p-type doped samples were similar. However, these samples have shown important difference in the density of structural defects and non-radiative centers. This result indicates that the density of defects depends on the type of doping in GaAs(1-x) Bix and on the substrate orientation. In addition, we have observed that the sample grown on the GaAs (100) substrate has a compressive strain 2.7 times higher than the samples grown on the substrate GaAs (311)B. In general, our results evidence that both the amount of compressive strain and the density of defects depend on the substrate orientation and type of doping, which affects considerable the optical properties of GaAsBi thin films.Os semicondutores III-V diluídos com bismuto têm apresentado um grande interesse tanto do ponto de visita de física fundamental como para possíveis aplicações em optoeletrônica e spintrônica. Quando adicionamos uma pequena quantidade de Bi nos materiais III-V, observamos uma redução importante na energia do band gap. Além disso, é esperada uma redução significativa na recombinação Auger para concentrações de Bi acima de 10%, tornando tais materiais promissores para possíveis aplicações em dispositivos optoeletrônicos na região do infravermelho próximo. Neste trabalho, realizamos um estudo sistemático das propriedades ópticas e estruturais de filme semicondutores contendo Bi, crescidos pela técnica de Epitaxia por Feixe Molecular (MBE). Em particular, investigamos: (i) filmes de GaSb(1-x) Bix crescidos em substratos GaSb (100) com diferentes concentrações de Bi e (ii) filmes de GaAs(1-x) Bix dopados tipo n e tipo p crescidos por substratos GaAs (100) e (311)B. Os filmes GaSb(1-x)Bix foram caracterizados por difração de raio X de alta resolução (HRXRD), microscopia de força atômica (AFM) e efeito Raman em temperatura ambiente e para lasers com diferentes comprimentos de onda. De forma geral, observamos que as amostras possuem uma alta qualidade cristalina. Observamos diversos modos Raman que foram associados aos modos Raman do GaSb, aglomerados de Bi e modos do GaBi. Dependendo da concentração de Bi e do comprimento de onda do laser, observamos que alguns picos Raman tiveram um aumento importante de intensidade do pico. Esse resultado foi atribuído ao efeito Raman ressonante. Os filmes de GaAsBi também foram investigados por diferentes técnicas experimentais tais como: HRXRD, micro-Raman à temperatura ambiente e fotoluminescência (PL) em baixa temperatura. Observamos que as amostras GaAsBi possuem concentração de Bi similares, mas com uma diferença importante na densidade de defeitos estruturais e de centros não radiativos. Este resultado indica que a densidade de defeitos depende consideravelmente do tipo de dopagem do GaAs(1-x) Bix e do tipo de orientação do substrato. Além disso, observamos que a amostra crescida no substrato GaAs (100) possui tensão mecânica compressiva 2.7 vezes maior do que as amostras crescidas no substrato GaAs (311)B. De forma geral, os resultados obtidos evidenciam que tanto presença de tensões compressivas como contribuições de defeitos associados com o Bi dependem do tipo de dopagem e orientação cristalina do substrato utilizado, afetando consideravelmente as propriedades ópticas dos filmes de GaAsBi.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)engUniversidade Federal de São CarlosCâmpus São CarlosPrograma de Pós-Graduação em Física - PPGFUFSCarAttribution-NonCommercial-NoDerivs 3.0 Brazilhttp://creativecommons.org/licenses/by-nc-nd/3.0/br/info:eu-repo/semantics/openAccessBismutofilmes finosMBEPLGaSbBiGaAsBiBismuththin filmsMBEPLGaSbBiGaAsBiCIENCIAS EXATAS E DA TERRA::FISICAPropriedades ópticas de filmes semicondutores GaAsBi e GaSbBiOptical properties of GaAsBi and GaSbBi semiconductor filmsinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/doctoralThesis60060095c329bf-cc95-483d-b980-ef5b5a94a0a1reponame:Repositório Institucional da UFSCARinstname:Universidade Federal de São Carlos (UFSCAR)instacron:UFSCARORIGINALDaniele_de_Souza_Tese_VF.pdfDaniele_de_Souza_Tese_VF.pdfapplication/pdf3351109https://repositorio.ufscar.br/bitstream/ufscar/16244/1/Daniele_de_Souza_Tese_VF.pdf2ce1edd9b695b5f87ceb8c6dc72657d6MD51carta versão final_Yara.pdfcarta versão final_Yara.pdfapplication/pdf417540https://repositorio.ufscar.br/bitstream/ufscar/16244/3/carta%20vers%c3%a3o%20final_Yara.pdfd587aecf27227c827862f21a9970dea2MD53CC-LICENSElicense_rdflicense_rdfapplication/rdf+xml; charset=utf-8811https://repositorio.ufscar.br/bitstream/ufscar/16244/4/license_rdfe39d27027a6cc9cb039ad269a5db8e34MD54TEXTDaniele_de_Souza_Tese_VF.pdf.txtDaniele_de_Souza_Tese_VF.pdf.txtExtracted texttext/plain171124https://repositorio.ufscar.br/bitstream/ufscar/16244/5/Daniele_de_Souza_Tese_VF.pdf.txt8b5b177ac18e067ca7d6fa6210b36c07MD55carta versão final_Yara.pdf.txtcarta versão final_Yara.pdf.txtExtracted texttext/plain1323https://repositorio.ufscar.br/bitstream/ufscar/16244/7/carta%20vers%c3%a3o%20final_Yara.pdf.txt24edde913c5da01f2c3855568a41611dMD57THUMBNAILDaniele_de_Souza_Tese_VF.pdf.jpgDaniele_de_Souza_Tese_VF.pdf.jpgIM Thumbnailimage/jpeg7674https://repositorio.ufscar.br/bitstream/ufscar/16244/6/Daniele_de_Souza_Tese_VF.pdf.jpg2fcfd3cc42b2c612153625eca77d109cMD56carta versão final_Yara.pdf.jpgcarta versão final_Yara.pdf.jpgIM Thumbnailimage/jpeg6304https://repositorio.ufscar.br/bitstream/ufscar/16244/8/carta%20vers%c3%a3o%20final_Yara.pdf.jpgb4aad1f55eb129460a10e75808d9bebfMD58ufscar/162442023-09-18 18:32:19.8oai:repositorio.ufscar.br:ufscar/16244Repositório InstitucionalPUBhttps://repositorio.ufscar.br/oai/requestopendoar:43222023-09-18T18:32:19Repositório Institucional da UFSCAR - Universidade Federal de São Carlos (UFSCAR)false |
dc.title.por.fl_str_mv |
Propriedades ópticas de filmes semicondutores GaAsBi e GaSbBi |
dc.title.alternative.eng.fl_str_mv |
Optical properties of GaAsBi and GaSbBi semiconductor films |
title |
Propriedades ópticas de filmes semicondutores GaAsBi e GaSbBi |
spellingShingle |
Propriedades ópticas de filmes semicondutores GaAsBi e GaSbBi De Souza, Daniele Bismuto filmes finos MBE PL GaSbBi GaAsBi Bismuth thin films MBE PL GaSbBi GaAsBi CIENCIAS EXATAS E DA TERRA::FISICA |
title_short |
Propriedades ópticas de filmes semicondutores GaAsBi e GaSbBi |
title_full |
Propriedades ópticas de filmes semicondutores GaAsBi e GaSbBi |
title_fullStr |
Propriedades ópticas de filmes semicondutores GaAsBi e GaSbBi |
title_full_unstemmed |
Propriedades ópticas de filmes semicondutores GaAsBi e GaSbBi |
title_sort |
Propriedades ópticas de filmes semicondutores GaAsBi e GaSbBi |
author |
De Souza, Daniele |
author_facet |
De Souza, Daniele |
author_role |
author |
dc.contributor.authorlattes.por.fl_str_mv |
http://lattes.cnpq.br/6062631511329766 |
dc.contributor.author.fl_str_mv |
De Souza, Daniele |
dc.contributor.advisor1.fl_str_mv |
Gobato, Yara Galvão |
dc.contributor.advisor1Lattes.fl_str_mv |
http://lattes.cnpq.br/7558531056409406 |
dc.contributor.advisor-co1.fl_str_mv |
Galeti, Helder Vinícius Avanço |
dc.contributor.advisor-co1Lattes.fl_str_mv |
http://lattes.cnpq.br/3876752605313288 |
dc.contributor.authorID.fl_str_mv |
83de3075-92e9-46c3-9a64-d785c6d8468d |
contributor_str_mv |
Gobato, Yara Galvão Galeti, Helder Vinícius Avanço |
dc.subject.por.fl_str_mv |
Bismuto filmes finos MBE PL GaSbBi GaAsBi |
topic |
Bismuto filmes finos MBE PL GaSbBi GaAsBi Bismuth thin films MBE PL GaSbBi GaAsBi CIENCIAS EXATAS E DA TERRA::FISICA |
dc.subject.eng.fl_str_mv |
Bismuth thin films MBE PL GaSbBi GaAsBi |
dc.subject.cnpq.fl_str_mv |
CIENCIAS EXATAS E DA TERRA::FISICA |
description |
Bismuth-diluted III-V are interesting materials for possible applications in optoeletronic and spintronic devices. If we add a small amount of Bi in III-V materials, we observe a strong reduction in the band gap energy. In addition, it is expected that these materials present an important attenuation of Auger recombination for Bi concentrations higher than 10%. Therefore, these materials are good candidates for the development of optoelectronic devices in the near-infrared region. In this work, we have performed a systematic study of III-V materials with different Bi concentrations grown by molecular beam expitaxy (MBE) in different substrates. Particularly, we have investigated films GaSb(1-x) Bix grown on (100) GaSb substrates and n- and p-doped GaAs(1-x) Bix films grown on (100) and (311)B GaAs substrates. The GaSb(1-x) Bix films were investigated using high resolution XRD (HRXRD), AFM and Raman spectroscopy. We have observed that the GaSb(1-x) Bix films have a good crystalline quality. In addition, we have observed several Raman modes associated with GaSb, Bi clusters and GaBi. We have observed an important increase of Raman intensity depending on the Bi concentration and laser wavelength. This result was attributed to the resonant Raman effect. We have also investigated the GaAsBi samples using different techniques such as: HRXRD, Raman and low temperature photoluminescence (PL). We have observed that the incorporation of Bi in the n- and p-type doped samples were similar. However, these samples have shown important difference in the density of structural defects and non-radiative centers. This result indicates that the density of defects depends on the type of doping in GaAs(1-x) Bix and on the substrate orientation. In addition, we have observed that the sample grown on the GaAs (100) substrate has a compressive strain 2.7 times higher than the samples grown on the substrate GaAs (311)B. In general, our results evidence that both the amount of compressive strain and the density of defects depend on the substrate orientation and type of doping, which affects considerable the optical properties of GaAsBi thin films. |
publishDate |
2022 |
dc.date.accessioned.fl_str_mv |
2022-06-07T17:16:16Z |
dc.date.available.fl_str_mv |
2022-06-07T17:16:16Z |
dc.date.issued.fl_str_mv |
2022-05-02 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/doctoralThesis |
format |
doctoralThesis |
status_str |
publishedVersion |
dc.identifier.citation.fl_str_mv |
DE SOUZA, Daniele. Propriedades ópticas de filmes semicondutores GaAsBi e GaSbBi. 2022. Tese (Doutorado em Física) – Universidade Federal de São Carlos, São Carlos, 2022. Disponível em: https://repositorio.ufscar.br/handle/ufscar/16244. |
dc.identifier.uri.fl_str_mv |
https://repositorio.ufscar.br/handle/ufscar/16244 |
identifier_str_mv |
DE SOUZA, Daniele. Propriedades ópticas de filmes semicondutores GaAsBi e GaSbBi. 2022. Tese (Doutorado em Física) – Universidade Federal de São Carlos, São Carlos, 2022. Disponível em: https://repositorio.ufscar.br/handle/ufscar/16244. |
url |
https://repositorio.ufscar.br/handle/ufscar/16244 |
dc.language.iso.fl_str_mv |
eng |
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eng |
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600 600 |
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95c329bf-cc95-483d-b980-ef5b5a94a0a1 |
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Attribution-NonCommercial-NoDerivs 3.0 Brazil http://creativecommons.org/licenses/by-nc-nd/3.0/br/ info:eu-repo/semantics/openAccess |
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Attribution-NonCommercial-NoDerivs 3.0 Brazil http://creativecommons.org/licenses/by-nc-nd/3.0/br/ |
eu_rights_str_mv |
openAccess |
dc.publisher.none.fl_str_mv |
Universidade Federal de São Carlos Câmpus São Carlos |
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Programa de Pós-Graduação em Física - PPGF |
dc.publisher.initials.fl_str_mv |
UFSCar |
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Universidade Federal de São Carlos Câmpus São Carlos |
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Universidade Federal de São Carlos (UFSCAR) |
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UFSCAR |
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UFSCAR |
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Repositório Institucional da UFSCAR |
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