Impurity states in the narrow band-gap semiconductor n-type InSb

Detalhes bibliográficos
Autor(a) principal: Silva, A. Ferreira da
Data de Publicação: 1996
Outros Autores: Dantas, Nilton Souza, Mota, F. de Brito, Canuto, Sylvio, Fazzio, A.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFBA
Texto Completo: http://www.repositorio.ufba.br/ri/handle/ri/8496
Resumo: Texto completo: acesso restrito. p.295–297
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spelling Silva, A. Ferreira daDantas, Nilton SouzaMota, F. de BritoCanuto, SylvioFazzio, A.Silva, A. Ferreira daDantas, Nilton SouzaMota, F. de BritoCanuto, SylvioFazzio, A.2013-02-18T16:22:53Z19960038-1098http://www.repositorio.ufba.br/ri/handle/ri/8496v. 99, n. 4Texto completo: acesso restrito. p.295–297We investigate impurity pair and triad formations in the narrow band-gap semiconductor n-doped InSb. It is found that in the region of the band-gap energy, Eg = 0.23 eV, at 0 K, the effects of such clusters play a relevant role in the optical properties around and below the ionization energy of an isolated impurity (i.e., Ei = 0.64 meV). The transition for the uncompensated system is obtained as the concentration of impurities exceeds Nc = 4.7 × 1013 cm−3.Submitted by Suelen Reis (suelen_suzane@hotmail.com) on 2013-02-15T14:55:54Z No. of bitstreams: 1 Silva.pdf: 241130 bytes, checksum: 96b4030adfa26d68798e7cb63327b999 (MD5)Approved for entry into archive by Fatima Cleômenis Botelho Maria (botelho@ufba.br) on 2013-02-18T16:22:53Z (GMT) No. of bitstreams: 1 Silva.pdf: 241130 bytes, checksum: 96b4030adfa26d68798e7cb63327b999 (MD5)Made available in DSpace on 2013-02-18T16:22:53Z (GMT). No. of bitstreams: 1 Silva.pdf: 241130 bytes, checksum: 96b4030adfa26d68798e7cb63327b999 (MD5) Previous issue date: 1996http://dx.doi.org.ez10.periodicos.capes.gov.br/10.1016/0038-1098(96)80022-6reponame:Repositório Institucional da UFBAinstname:Universidade Federal da Bahia (UFBA)instacron:UFBAA. disordered systemsA. semiconductorsC. impurities in semiconductorsD. optical propertiesImpurity states in the narrow band-gap semiconductor n-type InSbSolid State Communicationsinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article10000-01-01enginfo:eu-repo/semantics/openAccessORIGINALSilva.pdfSilva.pdfapplication/pdf241130https://repositorio.ufba.br/bitstream/ri/8496/1/Silva.pdf96b4030adfa26d68798e7cb63327b999MD51LICENSElicense.txtlicense.txttext/plain1762https://repositorio.ufba.br/bitstream/ri/8496/2/license.txt1b89a9a0548218172d7c829f87a0eab9MD52TEXTSilva.pdf.txtSilva.pdf.txtExtracted texttext/plain10879https://repositorio.ufba.br/bitstream/ri/8496/3/Silva.pdf.txtfa092aa5d9a757a24220913a790dab66MD53ri/84962022-07-05 14:03:48.779oai:repositorio.ufba.br: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Repositório InstitucionalPUBhttp://192.188.11.11:8080/oai/requestopendoar:19322022-07-05T17:03:48Repositório Institucional da UFBA - Universidade Federal da Bahia (UFBA)false
dc.title.pt_BR.fl_str_mv Impurity states in the narrow band-gap semiconductor n-type InSb
dc.title.alternative.pt_BR.fl_str_mv Solid State Communications
title Impurity states in the narrow band-gap semiconductor n-type InSb
spellingShingle Impurity states in the narrow band-gap semiconductor n-type InSb
Silva, A. Ferreira da
A. disordered systems
A. semiconductors
C. impurities in semiconductors
D. optical properties
title_short Impurity states in the narrow band-gap semiconductor n-type InSb
title_full Impurity states in the narrow band-gap semiconductor n-type InSb
title_fullStr Impurity states in the narrow band-gap semiconductor n-type InSb
title_full_unstemmed Impurity states in the narrow band-gap semiconductor n-type InSb
title_sort Impurity states in the narrow band-gap semiconductor n-type InSb
author Silva, A. Ferreira da
author_facet Silva, A. Ferreira da
Dantas, Nilton Souza
Mota, F. de Brito
Canuto, Sylvio
Fazzio, A.
author_role author
author2 Dantas, Nilton Souza
Mota, F. de Brito
Canuto, Sylvio
Fazzio, A.
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Silva, A. Ferreira da
Dantas, Nilton Souza
Mota, F. de Brito
Canuto, Sylvio
Fazzio, A.
Silva, A. Ferreira da
Dantas, Nilton Souza
Mota, F. de Brito
Canuto, Sylvio
Fazzio, A.
dc.subject.por.fl_str_mv A. disordered systems
A. semiconductors
C. impurities in semiconductors
D. optical properties
topic A. disordered systems
A. semiconductors
C. impurities in semiconductors
D. optical properties
description Texto completo: acesso restrito. p.295–297
publishDate 1996
dc.date.issued.fl_str_mv 1996
dc.date.accessioned.fl_str_mv 2013-02-18T16:22:53Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://www.repositorio.ufba.br/ri/handle/ri/8496
dc.identifier.issn.none.fl_str_mv 0038-1098
dc.identifier.number.pt_BR.fl_str_mv v. 99, n. 4
identifier_str_mv 0038-1098
v. 99, n. 4
url http://www.repositorio.ufba.br/ri/handle/ri/8496
dc.language.iso.fl_str_mv eng
language eng
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.pt_BR.fl_str_mv http://dx.doi.org.ez10.periodicos.capes.gov.br/10.1016/0038-1098(96)80022-6
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFBA
instname:Universidade Federal da Bahia (UFBA)
instacron:UFBA
instname_str Universidade Federal da Bahia (UFBA)
instacron_str UFBA
institution UFBA
reponame_str Repositório Institucional da UFBA
collection Repositório Institucional da UFBA
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