First-principle calculations of optical properties of wurtzite AlN and GaN

Detalhes bibliográficos
Autor(a) principal: Persson, C.
Data de Publicação: 2001
Outros Autores: Ahuja, Rajeev, Silva, A. Ferreira da, Johansson, B.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFBA
Texto Completo: http://www.repositorio.ufba.br/ri/handle/ri/7670
Resumo: Texto completo: acesso restrito. p. 407–414
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spelling Persson, C.Ahuja, RajeevSilva, A. Ferreira daJohansson, B.Persson, C.Ahuja, RajeevSilva, A. Ferreira daJohansson, B.2012-12-19T15:56:10Z20010022-0248http://www.repositorio.ufba.br/ri/handle/ri/7670v. 231, n. 3Texto completo: acesso restrito. p. 407–414The imaginary part of the dielectric function of wurtzite AlN and GaN has been calculated in the long wavelength limit, using two different first-principle electronic structure methods. The first method is a full-potential linearized augmented plane wave method and the second is a full-potential linear muffin-tin orbital method. From the Kramers– Kronig dispersion relations the real part of the dielectric function has been obtained, taking into account a quasi-particle band-gap correction according to Bechstedt and Del Sole. Absorption due to optical phonons is treated as a delta function in the imaginary part of the dielectric function. Both the longitudinal as well as the transverse components of the dielectric function are presented, showing that the anisotropy is small in these materials. Although we use different correlation potentials in the two methods, the results are similar. We compare our calculated dielectric functions with spectroscopic ellipsometry and reflectance spectra measurements.Submitted by Suelen Reis (suelen_suzane@hotmail.com) on 2012-12-19T15:56:09Z No. of bitstreams: 1 1-s2.0-S0022024801014713-main.pdf: 213795 bytes, checksum: a44b45d19c52a05a1852589a62bb7a7e (MD5)Made available in DSpace on 2012-12-19T15:56:10Z (GMT). No. of bitstreams: 1 1-s2.0-S0022024801014713-main.pdf: 213795 bytes, checksum: a44b45d19c52a05a1852589a62bb7a7e (MD5) Previous issue date: 2001http://dx.doi.org/10.1016/S0022-0248(01)01471-3reponame:Repositório Institucional da UFBAinstname:Universidade Federal da Bahia (UFBA)instacron:UFBAA1. Computer simulationA1. Crystal structureB1. NitridesB2. Semiconducting III–V materialsFirst-principle calculations of optical properties of wurtzite AlN and GaNJournal of Crystal Growthinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article10000-01-01enginfo:eu-repo/semantics/openAccessLICENSElicense.txtlicense.txttext/plain1762https://repositorio.ufba.br/bitstream/ri/7670/2/license.txt1b89a9a0548218172d7c829f87a0eab9MD52ORIGINAL1-s2.0-S0022024801014713-main.pdf1-s2.0-S0022024801014713-main.pdfapplication/pdf213795https://repositorio.ufba.br/bitstream/ri/7670/1/1-s2.0-S0022024801014713-main.pdfa44b45d19c52a05a1852589a62bb7a7eMD51TEXT1-s2.0-S0022024801014713-main.pdf.txt1-s2.0-S0022024801014713-main.pdf.txtExtracted texttext/plain19331https://repositorio.ufba.br/bitstream/ri/7670/3/1-s2.0-S0022024801014713-main.pdf.txt39ca2269048dc93175e1985cabe3302aMD53ri/76702022-07-05 14:03:46.013oai:repositorio.ufba.br:ri/7670VGVybW8gZGUgTGljZW7vv71hLCBu77+9byBleGNsdXNpdm8sIHBhcmEgbyBkZXDvv71zaXRvIG5vIHJlcG9zaXTvv71yaW8gSW5zdGl0dWNpb25hbCBkYSBVRkJBCgogICAgUGVsbyBwcm9jZXNzbyBkZSBzdWJtaXNz77+9byBkZSBkb2N1bWVudG9zLCBvIGF1dG9yIG91IHNldQpyZXByZXNlbnRhbnRlIGxlZ2FsLCBhbyBhY2VpdGFyIGVzc2UgdGVybW8gZGUgbGljZW7vv71hLCBjb25jZWRlIGFvClJlcG9zaXTvv71yaW8gSW5zdGl0dWNpb25hbCBkYSBVbml2ZXJzaWRhZGUgRmVkZXJhbCBkYSBCYWhpYSBvIGRpcmVpdG8KZGUgbWFudGVyIHVtYSBj77+9cGlhIGVtIHNldSByZXBvc2l077+9cmlvIGNvbSBhIGZpbmFsaWRhZGUsIHByaW1laXJhLCAKZGUgcHJlc2VydmHvv73vv71vLiBFc3NlcyB0ZXJtb3MsIG7vv71vIGV4Y2x1c2l2b3MsIG1hbnTvv71tIG9zIGRpcmVpdG9zIGRlIAphdXRvci9jb3B5cmlnaHQsIG1hcyBlbnRlbmRlIG8gZG9jdW1lbnRvIGNvbW8gcGFydGUgZG8gYWNlcnZvIGludGVsZWN0dWFsIGRlc3NhIFVuaXZlcnNpZGFkZS4gCgogICAgUGFyYSBvcyBkb2N1bWVudG9zIHB1YmxpY2Fkb3MgY29tIHJlcGFzc2UgZGUgZGlyZWl0b3MgZGUgZGlzdHJpYnVp77+977+9bywgZXNzZSB0ZXJtbyBkZSBsaWNlbu+/vWEgZW50ZW5kZSBxdWU6IAoKICAgIE1hbnRlbmRvIG9zICBkaXJlaXRvcyBhdXRvcmFpcywgcmVwYXNzYWRvcyBhIHRlcmNlaXJvcywgZW0gY2FzbyAKZGUgcHVibGljYe+/ve+/vWVzLCBvIHJlcG9zaXTvv71yaW8gcG9kZSByZXN0cmluZ2lyIG8gYWNlc3NvIGFvIHRleHRvIAppbnRlZ3JhbCwgbWFzIGxpYmVyYSBhcyBpbmZvcm1h77+977+9ZXMgc29icmUgbyBkb2N1bWVudG8gKE1ldGFkYWRvcyBkZXNjcml0aXZvcykuCgogRGVzdGEgZm9ybWEsIGF0ZW5kZW5kbyBhb3MgYW5zZWlvcyBkZXNzYSB1bml2ZXJzaWRhZGUgCmVtIG1hbnRlciBzdWEgcHJvZHXvv73vv71vIGNpZW5077+9ZmljYSBjb20gYXMgcmVzdHJp77+977+9ZXMgaW1wb3N0YXMgcGVsb3MgCmVkaXRvcmVzIGRlIHBlcmnvv71kaWNvcy4gCgogICAgUGFyYSBhcyBwdWJsaWNh77+977+9ZXMgZW0gaW5pY2lhdGl2YXMgcXVlIHNlZ3VlbSBhIHBvbO+/vXRpY2EgZGUgCkFjZXNzbyBBYmVydG8sIG9zIGRlcO+/vXNpdG9zIGNvbXB1bHPvv71yaW9zIG5lc3NlIHJlcG9zaXTvv71yaW8gbWFudO+/vW0gCm9zIGRpcmVpdG9zIGF1dG9yYWlzLCBtYXMgbWFudO+/vW0gbyBhY2Vzc28gaXJyZXN0cml0byBhbyBtZXRhZGFkb3MgCmUgdGV4dG8gY29tcGxldG8uIEFzc2ltLCBhIGFjZWl0Ye+/ve+/vW8gZGVzc2UgdGVybW8gbu+/vW8gbmVjZXNzaXRhIGRlIApjb25zZW50aW1lbnRvIHBvciBwYXJ0ZSBkZSBhdXRvcmVzL2RldGVudG9yZXMgZG9zIGRpcmVpdG9zLCBwb3IgCmVzdGFyZW0gZW0gaW5pY2lhdGl2YXMgZGUgYWNlc3NvIGFiZXJ0by4KCiAgICBFbSBhbWJvcyBvIGNhc28sIGVzc2UgdGVybW8gZGUgbGljZW7vv71hLCBwb2RlIHNlciBhY2VpdG8gcGVsbyAKYXV0b3IsIGRldGVudG9yZXMgZGUgZGlyZWl0b3MgZS9vdSB0ZXJjZWlyb3MgYW1wYXJhZG9zIHBlbGEgCnVuaXZlcnNpZGFkZS4gRGV2aWRvIGFvcyBkaWZlcmVudGVzIHByb2Nlc3NvcyBwZWxvIHF1YWwgYSBzdWJtaXNz77+9byAKcG9kZSBvY29ycmVyLCBvIHJlcG9zaXTvv71yaW8gcGVybWl0ZSBhIGFjZWl0Ye+/ve+/vW8gZGEgbGljZW7vv71hIHBvciAKdGVyY2Vpcm9zLCBzb21lbnRlIG5vcyBjYXNvcyBkZSBkb2N1bWVudG9zIHByb2R1emlkb3MgcG9yIGludGVncmFudGVzIApkYSBVRkJBIGUgc3VibWV0aWRvcyBwb3IgcGVzc29hcyBhbXBhcmFkYXMgcG9yIGVzdGEgaW5zdGl0dWnvv73vv71vLgo=Repositório InstitucionalPUBhttp://192.188.11.11:8080/oai/requestopendoar:19322022-07-05T17:03:46Repositório Institucional da UFBA - Universidade Federal da Bahia (UFBA)false
dc.title.pt_BR.fl_str_mv First-principle calculations of optical properties of wurtzite AlN and GaN
dc.title.alternative.pt_BR.fl_str_mv Journal of Crystal Growth
title First-principle calculations of optical properties of wurtzite AlN and GaN
spellingShingle First-principle calculations of optical properties of wurtzite AlN and GaN
Persson, C.
A1. Computer simulation
A1. Crystal structure
B1. Nitrides
B2. Semiconducting III–V materials
title_short First-principle calculations of optical properties of wurtzite AlN and GaN
title_full First-principle calculations of optical properties of wurtzite AlN and GaN
title_fullStr First-principle calculations of optical properties of wurtzite AlN and GaN
title_full_unstemmed First-principle calculations of optical properties of wurtzite AlN and GaN
title_sort First-principle calculations of optical properties of wurtzite AlN and GaN
author Persson, C.
author_facet Persson, C.
Ahuja, Rajeev
Silva, A. Ferreira da
Johansson, B.
author_role author
author2 Ahuja, Rajeev
Silva, A. Ferreira da
Johansson, B.
author2_role author
author
author
dc.contributor.author.fl_str_mv Persson, C.
Ahuja, Rajeev
Silva, A. Ferreira da
Johansson, B.
Persson, C.
Ahuja, Rajeev
Silva, A. Ferreira da
Johansson, B.
dc.subject.por.fl_str_mv A1. Computer simulation
A1. Crystal structure
B1. Nitrides
B2. Semiconducting III–V materials
topic A1. Computer simulation
A1. Crystal structure
B1. Nitrides
B2. Semiconducting III–V materials
description Texto completo: acesso restrito. p. 407–414
publishDate 2001
dc.date.issued.fl_str_mv 2001
dc.date.accessioned.fl_str_mv 2012-12-19T15:56:10Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://www.repositorio.ufba.br/ri/handle/ri/7670
dc.identifier.issn.none.fl_str_mv 0022-0248
dc.identifier.number.pt_BR.fl_str_mv v. 231, n. 3
identifier_str_mv 0022-0248
v. 231, n. 3
url http://www.repositorio.ufba.br/ri/handle/ri/7670
dc.language.iso.fl_str_mv eng
language eng
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dc.source.pt_BR.fl_str_mv http://dx.doi.org/10.1016/S0022-0248(01)01471-3
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