Variational rashba splitting in two-dimensional electron gases in III-V semiconductor heterojunctions

Detalhes bibliográficos
Autor(a) principal: Sandoval, M. A. Toloza
Data de Publicação: 2009
Outros Autores: Silva, A. Ferreira da, Silva, E. A. de Andrada e, La Rocca, G. C.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFBA
Texto Completo: http://www.repositorio.ufba.br/ri/handle/ri/13229
Resumo: p. 1-4
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spelling Sandoval, M. A. TolozaSilva, A. Ferreira daSilva, E. A. de Andrada eLa Rocca, G. C.Sandoval, M. A. TolozaSilva, A. Ferreira daSilva, E. A. de Andrada eLa Rocca, G. C.2013-10-15T15:18:12Z2013-10-15T15:18:12Z20091098-0121http://www.repositorio.ufba.br/ri/handle/ri/13229v. 79, n. 24p. 1-4Control of the Rashba spin-orbit coupling in semiconductor two-dimensional electron gases (2DEGs) is of fundamental interest to the rapidly evolving semiconductor spintronics and depends on the detailed knowledge of the controversial interface and barrier penetration effects. Based on the 8×8 k⋅p Kane model for the bulk, we propose a spin-dependent variational solution for the conduction subbands of III-V heterojuctions, which reveals analytically the different contributions to the Rashba splitting and its dependency on heterostructure and band parameters as the band offset and effective masses. Perturbation expansions are used to derive renormalized parameters for an effective, simple, and yet accurate one band model. Spin-dependent modified Fang-Howard trial functions, which satisfy the spin-dependent boundary conditions, are then introduced. The subband splitting is given as a function of the variational parameter which is obtained minimizing the total energy of the 2DEG. Our calculations applied to InAlAs/InGaAs heterojunctions, where a near 20% increase in the splitting is observed due to the barrier penetration, are in good agreement with both experiment and exact numerical calculations. Well-known expressions in the limit of a perfect insulating barrier are exactly reproduced.Submitted by Suelen Reis (suziy.ellen@gmail.com) on 2013-10-08T14:36:46Z No. of bitstreams: 1 PhysRevB.79.241305.pdf: 263858 bytes, checksum: 147d6c2e49c5fafe8bca7a161752cacc (MD5)Approved for entry into archive by Rodrigo Meirelles(rodrigomei@ufba.br) on 2013-10-15T15:18:12Z (GMT) No. of bitstreams: 1 PhysRevB.79.241305.pdf: 263858 bytes, checksum: 147d6c2e49c5fafe8bca7a161752cacc (MD5)Made available in DSpace on 2013-10-15T15:18:12Z (GMT). No. of bitstreams: 1 PhysRevB.79.241305.pdf: 263858 bytes, checksum: 147d6c2e49c5fafe8bca7a161752cacc (MD5) Previous issue date: 2009http://dx.doi.org/10.1103/PhysRevB.79.241305reponame:Repositório Institucional da UFBAinstname:Universidade Federal da Bahia (UFBA)instacron:UFBAVariational rashba splitting in two-dimensional electron gases in III-V semiconductor heterojunctionsPhysical Review Binfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleenginfo:eu-repo/semantics/openAccessORIGINALPhysRevB.79.241305.pdfPhysRevB.79.241305.pdfapplication/pdf263858https://repositorio.ufba.br/bitstream/ri/13229/1/PhysRevB.79.241305.pdf147d6c2e49c5fafe8bca7a161752caccMD51LICENSElicense.txtlicense.txttext/plain1365https://repositorio.ufba.br/bitstream/ri/13229/2/license.txt5371a150bdc863f78dcf39281543bd86MD52TEXTPhysRevB.79.241305.pdf.txtPhysRevB.79.241305.pdf.txtExtracted texttext/plain18224https://repositorio.ufba.br/bitstream/ri/13229/3/PhysRevB.79.241305.pdf.txt668ef50b9a0bf2d59a036a55d387a99bMD53ri/132292022-07-05 14:02:49.032oai:repositorio.ufba.br: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Repositório InstitucionalPUBhttp://192.188.11.11:8080/oai/requestopendoar:19322022-07-05T17:02:49Repositório Institucional da UFBA - Universidade Federal da Bahia (UFBA)false
dc.title.pt_BR.fl_str_mv Variational rashba splitting in two-dimensional electron gases in III-V semiconductor heterojunctions
dc.title.alternative.pt_BR.fl_str_mv Physical Review B
title Variational rashba splitting in two-dimensional electron gases in III-V semiconductor heterojunctions
spellingShingle Variational rashba splitting in two-dimensional electron gases in III-V semiconductor heterojunctions
Sandoval, M. A. Toloza
title_short Variational rashba splitting in two-dimensional electron gases in III-V semiconductor heterojunctions
title_full Variational rashba splitting in two-dimensional electron gases in III-V semiconductor heterojunctions
title_fullStr Variational rashba splitting in two-dimensional electron gases in III-V semiconductor heterojunctions
title_full_unstemmed Variational rashba splitting in two-dimensional electron gases in III-V semiconductor heterojunctions
title_sort Variational rashba splitting in two-dimensional electron gases in III-V semiconductor heterojunctions
author Sandoval, M. A. Toloza
author_facet Sandoval, M. A. Toloza
Silva, A. Ferreira da
Silva, E. A. de Andrada e
La Rocca, G. C.
author_role author
author2 Silva, A. Ferreira da
Silva, E. A. de Andrada e
La Rocca, G. C.
author2_role author
author
author
dc.contributor.author.fl_str_mv Sandoval, M. A. Toloza
Silva, A. Ferreira da
Silva, E. A. de Andrada e
La Rocca, G. C.
Sandoval, M. A. Toloza
Silva, A. Ferreira da
Silva, E. A. de Andrada e
La Rocca, G. C.
description p. 1-4
publishDate 2009
dc.date.issued.fl_str_mv 2009
dc.date.accessioned.fl_str_mv 2013-10-15T15:18:12Z
dc.date.available.fl_str_mv 2013-10-15T15:18:12Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://www.repositorio.ufba.br/ri/handle/ri/13229
dc.identifier.issn.none.fl_str_mv 1098-0121
dc.identifier.number.pt_BR.fl_str_mv v. 79, n. 24
identifier_str_mv 1098-0121
v. 79, n. 24
url http://www.repositorio.ufba.br/ri/handle/ri/13229
dc.language.iso.fl_str_mv eng
language eng
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
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