Spin-dependent conductance in nonmagnetic InGaAs asymmetric double barrier devices

Detalhes bibliográficos
Autor(a) principal: Araújo, Carlos Moysés
Data de Publicação: 2004
Outros Autores: Silva, A. Ferreira da, Persson, C., Ahuja, Rajeev, Silva, E. A. de Andrada e
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFBA
Texto Completo: http://www.repositorio.ufba.br/ri/handle/ri/6703
Resumo: p.632-634
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spelling Araújo, Carlos MoysésSilva, A. Ferreira daPersson, C.Ahuja, RajeevSilva, E. A. de Andrada eAraújo, Carlos MoysésSilva, A. Ferreira daPersson, C.Ahuja, RajeevSilva, E. A. de Andrada e2012-09-06T13:59:40Z2012-09-06T13:59:40Z2004-060103-9733http://www.repositorio.ufba.br/ri/handle/ri/6703v. 34, n. 2p.632-634The spin dependence of the conductance of an asymmetric double-barrier InGaAs device is studied within the multiband k•p and envelope function approximations. The spin-dependent transmission probability for electrons across the structure is obtained using transfer matrices and the low bias conductance per unit area is calculated as a function of the Fermi energy (or doping) in the contacts. The possibility to obtain spin polarized currents in such devices is demonstrated, however, the resulting degree of polarization is rather small (a few percent) in the specific InGaAs structures considered here.Submitted by Texeira Ana (atanateixeira@gmail.com) on 2012-09-06T13:59:40Z No. of bitstreams: 1 Araujo, C. Moyses.pdf: 103581 bytes, checksum: d9a55fb7bdf2970b921ffe704261db7c (MD5)Made available in DSpace on 2012-09-06T13:59:40Z (GMT). No. of bitstreams: 1 Araujo, C. Moyses.pdf: 103581 bytes, checksum: d9a55fb7bdf2970b921ffe704261db7c (MD5) Previous issue date: 2004-06São PauloSociedade Brasileira de Físicahttp://dx.doi.org/10.1590/S0103-97332004000400026reponame:Repositório Institucional da UFBAinstname:Universidade Federal da Bahia (UFBA)instacron:UFBASpin-dependent conductance in nonmagnetic InGaAs asymmetric double barrier devicesBrazilian Journal of Physicsinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleenginfo:eu-repo/semantics/openAccessLICENSElicense.txtlicense.txttext/plain1762https://repositorio.ufba.br/bitstream/ri/6703/2/license.txt1b89a9a0548218172d7c829f87a0eab9MD52ORIGINALAraujo, C. Moyses.pdfAraujo, C. Moyses.pdfapplication/pdf103581https://repositorio.ufba.br/bitstream/ri/6703/1/Araujo%2c%20C.%20Moyses.pdfd9a55fb7bdf2970b921ffe704261db7cMD51TEXTAraujo, C. Moyses.pdf.txtAraujo, C. Moyses.pdf.txtExtracted texttext/plain8685https://repositorio.ufba.br/bitstream/ri/6703/3/Araujo%2c%20C.%20Moyses.pdf.txt29ba5cc7e2f9a7d69362e479711ba6a2MD53ri/67032022-07-05 14:03:48.336oai:repositorio.ufba.br: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Repositório InstitucionalPUBhttp://192.188.11.11:8080/oai/requestopendoar:19322022-07-05T17:03:48Repositório Institucional da UFBA - Universidade Federal da Bahia (UFBA)false
dc.title.pt_BR.fl_str_mv Spin-dependent conductance in nonmagnetic InGaAs asymmetric double barrier devices
dc.title.alternative.pt_BR.fl_str_mv Brazilian Journal of Physics
title Spin-dependent conductance in nonmagnetic InGaAs asymmetric double barrier devices
spellingShingle Spin-dependent conductance in nonmagnetic InGaAs asymmetric double barrier devices
Araújo, Carlos Moysés
title_short Spin-dependent conductance in nonmagnetic InGaAs asymmetric double barrier devices
title_full Spin-dependent conductance in nonmagnetic InGaAs asymmetric double barrier devices
title_fullStr Spin-dependent conductance in nonmagnetic InGaAs asymmetric double barrier devices
title_full_unstemmed Spin-dependent conductance in nonmagnetic InGaAs asymmetric double barrier devices
title_sort Spin-dependent conductance in nonmagnetic InGaAs asymmetric double barrier devices
author Araújo, Carlos Moysés
author_facet Araújo, Carlos Moysés
Silva, A. Ferreira da
Persson, C.
Ahuja, Rajeev
Silva, E. A. de Andrada e
author_role author
author2 Silva, A. Ferreira da
Persson, C.
Ahuja, Rajeev
Silva, E. A. de Andrada e
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Araújo, Carlos Moysés
Silva, A. Ferreira da
Persson, C.
Ahuja, Rajeev
Silva, E. A. de Andrada e
Araújo, Carlos Moysés
Silva, A. Ferreira da
Persson, C.
Ahuja, Rajeev
Silva, E. A. de Andrada e
description p.632-634
publishDate 2004
dc.date.issued.fl_str_mv 2004-06
dc.date.accessioned.fl_str_mv 2012-09-06T13:59:40Z
dc.date.available.fl_str_mv 2012-09-06T13:59:40Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
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status_str publishedVersion
dc.identifier.uri.fl_str_mv http://www.repositorio.ufba.br/ri/handle/ri/6703
dc.identifier.issn.none.fl_str_mv 0103-9733
dc.identifier.number.pt_BR.fl_str_mv v. 34, n. 2
identifier_str_mv 0103-9733
v. 34, n. 2
url http://www.repositorio.ufba.br/ri/handle/ri/6703
dc.language.iso.fl_str_mv eng
language eng
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.pt_BR.fl_str_mv http://dx.doi.org/10.1590/S0103-97332004000400026
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