Optical absorption and band gap shift of n-doped AlxGa1−xAs alloys grown by MBE

Detalhes bibliográficos
Autor(a) principal: Silva, A. Ferreira da
Data de Publicação: 1998
Outros Autores: Persson, C., Berggren, K. F., Pepe, Iuri Muniz, Alves, A. Santos, Oliveira, A. G. de
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFBA
Texto Completo: http://www.repositorio.ufba.br/ri/handle/ri/12687
Resumo: Texto completo. Acesso restrito. p. 423–429
id UFBA-2_d5ff773f132ebb749c7f5af5e0dd9cba
oai_identifier_str oai:repositorio.ufba.br:ri/12687
network_acronym_str UFBA-2
network_name_str Repositório Institucional da UFBA
repository_id_str 1932
spelling Silva, A. Ferreira daPersson, C.Berggren, K. F.Pepe, Iuri MunizAlves, A. SantosOliveira, A. G. deSilva, A. Ferreira daPersson, C.Berggren, K. F.Pepe, Iuri MunizAlves, A. SantosOliveira, A. G. de2013-08-22T17:31:28Z2013-08-22T17:31:28Z19980167-9317http://www.repositorio.ufba.br/ri/handle/ri/12687v. 43–44Texto completo. Acesso restrito. p. 423–429We have investigated the band gap shift of Si-doped AlxGa1−xAs alloys as a function of both silicon concentration and Al composition. Correlation and impurity scattering effects were included in the theoretical model. The optical absorption of Al0.3Ga0.7As:Si at the fundamental band gap energy has been measured by a photoacoustic spectroscopy technique. We found the energy gap at about 1.8 eV. The samples were grown by molecular beam epitaxy and the Al fraction was measured by reflection high energy electro-diffraction technique.Submitted by Santiago Fabio (fabio.ssantiago@hotmail.com) on 2013-08-21T17:47:05Z No. of bitstreams: 1 111111111.pdf: 330696 bytes, checksum: dae2f901efda0e04f5798121eb3f99a9 (MD5)Approved for entry into archive by Vilma Conceição(vilmagc@ufba.br) on 2013-08-22T17:31:28Z (GMT) No. of bitstreams: 1 111111111.pdf: 330696 bytes, checksum: dae2f901efda0e04f5798121eb3f99a9 (MD5)Made available in DSpace on 2013-08-22T17:31:28Z (GMT). No. of bitstreams: 1 111111111.pdf: 330696 bytes, checksum: dae2f901efda0e04f5798121eb3f99a9 (MD5) Previous issue date: 1998SalvadorMicroelectronic Engineeringhttp://dx.doi.org.ez10.periodicos.capes.gov.br/10.1016/S0167-9317(98)00201-9reponame:Repositório Institucional da UFBAinstname:Universidade Federal da Bahia (UFBA)instacron:UFBADoped AlGaAs alloysBand gap energyPhotoacoustic spectroscopyMolecular beam epitaxyOptical absorption and band gap shift of n-doped AlxGa1−xAs alloys grown by MBEMicroelectronic Engineeringinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleenginfo:eu-repo/semantics/openAccessORIGINAL111111111.pdf111111111.pdfapplication/pdf330696https://repositorio.ufba.br/bitstream/ri/12687/1/111111111.pdfdae2f901efda0e04f5798121eb3f99a9MD51LICENSElicense.txtlicense.txttext/plain1762https://repositorio.ufba.br/bitstream/ri/12687/2/license.txt1b89a9a0548218172d7c829f87a0eab9MD52TEXT111111111.pdf.txt111111111.pdf.txtExtracted texttext/plain12937https://repositorio.ufba.br/bitstream/ri/12687/3/111111111.pdf.txt6d2845f52e8278a4348b3fbc54e750b1MD53ri/126872022-07-05 14:03:48.846oai:repositorio.ufba.br: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Repositório InstitucionalPUBhttp://192.188.11.11:8080/oai/requestopendoar:19322022-07-05T17:03:48Repositório Institucional da UFBA - Universidade Federal da Bahia (UFBA)false
dc.title.pt_BR.fl_str_mv Optical absorption and band gap shift of n-doped AlxGa1−xAs alloys grown by MBE
dc.title.alternative.pt_BR.fl_str_mv Microelectronic Engineering
title Optical absorption and band gap shift of n-doped AlxGa1−xAs alloys grown by MBE
spellingShingle Optical absorption and band gap shift of n-doped AlxGa1−xAs alloys grown by MBE
Silva, A. Ferreira da
Doped AlGaAs alloys
Band gap energy
Photoacoustic spectroscopy
Molecular beam epitaxy
title_short Optical absorption and band gap shift of n-doped AlxGa1−xAs alloys grown by MBE
title_full Optical absorption and band gap shift of n-doped AlxGa1−xAs alloys grown by MBE
title_fullStr Optical absorption and band gap shift of n-doped AlxGa1−xAs alloys grown by MBE
title_full_unstemmed Optical absorption and band gap shift of n-doped AlxGa1−xAs alloys grown by MBE
title_sort Optical absorption and band gap shift of n-doped AlxGa1−xAs alloys grown by MBE
author Silva, A. Ferreira da
author_facet Silva, A. Ferreira da
Persson, C.
Berggren, K. F.
Pepe, Iuri Muniz
Alves, A. Santos
Oliveira, A. G. de
author_role author
author2 Persson, C.
Berggren, K. F.
Pepe, Iuri Muniz
Alves, A. Santos
Oliveira, A. G. de
author2_role author
author
author
author
author
dc.contributor.author.fl_str_mv Silva, A. Ferreira da
Persson, C.
Berggren, K. F.
Pepe, Iuri Muniz
Alves, A. Santos
Oliveira, A. G. de
Silva, A. Ferreira da
Persson, C.
Berggren, K. F.
Pepe, Iuri Muniz
Alves, A. Santos
Oliveira, A. G. de
dc.subject.por.fl_str_mv Doped AlGaAs alloys
Band gap energy
Photoacoustic spectroscopy
Molecular beam epitaxy
topic Doped AlGaAs alloys
Band gap energy
Photoacoustic spectroscopy
Molecular beam epitaxy
description Texto completo. Acesso restrito. p. 423–429
publishDate 1998
dc.date.issued.fl_str_mv 1998
dc.date.accessioned.fl_str_mv 2013-08-22T17:31:28Z
dc.date.available.fl_str_mv 2013-08-22T17:31:28Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://www.repositorio.ufba.br/ri/handle/ri/12687
dc.identifier.issn.none.fl_str_mv 0167-9317
dc.identifier.number.pt_BR.fl_str_mv v. 43–44
identifier_str_mv 0167-9317
v. 43–44
url http://www.repositorio.ufba.br/ri/handle/ri/12687
dc.language.iso.fl_str_mv eng
language eng
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Microelectronic Engineering
publisher.none.fl_str_mv Microelectronic Engineering
dc.source.pt_BR.fl_str_mv http://dx.doi.org.ez10.periodicos.capes.gov.br/10.1016/S0167-9317(98)00201-9
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFBA
instname:Universidade Federal da Bahia (UFBA)
instacron:UFBA
instname_str Universidade Federal da Bahia (UFBA)
instacron_str UFBA
institution UFBA
reponame_str Repositório Institucional da UFBA
collection Repositório Institucional da UFBA
bitstream.url.fl_str_mv https://repositorio.ufba.br/bitstream/ri/12687/1/111111111.pdf
https://repositorio.ufba.br/bitstream/ri/12687/2/license.txt
https://repositorio.ufba.br/bitstream/ri/12687/3/111111111.pdf.txt
bitstream.checksum.fl_str_mv dae2f901efda0e04f5798121eb3f99a9
1b89a9a0548218172d7c829f87a0eab9
6d2845f52e8278a4348b3fbc54e750b1
bitstream.checksumAlgorithm.fl_str_mv MD5
MD5
MD5
repository.name.fl_str_mv Repositório Institucional da UFBA - Universidade Federal da Bahia (UFBA)
repository.mail.fl_str_mv
_version_ 1808459456053248000

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