Estudo das propriedades diéletricas do SrBi4Ti4O15 (SBTi) dopado com V2O5

• Autor(a) principal: Rodrigues Junior, Cauby Amorim
• Data de Publicação: 2013
• Outros Autores: Silva Filho, José Miranda da, Freitas, Daniel Barros de, Oliveira, Ronaldo Glauber Maia de, Sales, Antônio Jefferson Mangueira, Silva, Paulo Maria de Oliveira, Sales, Juscelino Chaves, Silva, Marcelo Antonio Santos da, Sousa, Djalma Gomes de, Campos Filho, Mucio Costa, Sombra, Antônio Sérgio Bezerra
• Tipo de documento: Artigo de conferência
• Idioma: por
• Título da fonte: Repositório Institucional da Universidade Federal do Ceará (UFC)
• Texto Completo: http://www.repositorio.ufc.br/handle/riufc/55921
• topic: Propriedades dielétricas; Cerâmicas; Dispositivos eletrônicos

The SrBi4Ti4O15 (SBTI) is a typical cation-deficient perovskite. This work aims to study the electrical and dielectric properties of the material SBTI doped vanadium oxide (V2O5). The SBTI was prepared by the ceramic method. The powders of bismuth oxide (Bi2O3), titanium oxide (TiO2) and strontium carbonate (SrCO3) were weighed stoichiometrically and mixed. The powders were mixed and milled calcined and then sintered (in the range of 1000 ° C) oven for 3 hours. Tablets were made with cylindrical shapes, and are added 3 wt% polyvinyl alcohol (PVA) on each wafer to promote better bonding. At 10kHz sample SBTi10V (10% V2O5 mass) on the property dielectric constant (K ') showed K' = 48.57, property loss tangent presented tg = 0.111 and electrical conductivity (σ = 3.10-6). Showing it is a good possibility for miniaturization in electronic devices (capacitors, etc).