Vazamentos de corrente e ineficiência de transporte em nanoestruturas semicondutoras investigadas através de propagação de pacotes de onda

• Autor(a) principal: Sousa, Ariel Adorno de
• Data de Publicação: 2015
• Tipo de documento: Tese
• Idioma: eng
• Título da fonte: Repositório Institucional da Universidade Federal do Ceará (UFC)
• Texto Completo: http://www.repositorio.ufc.br/handle/riufc/12779
• topic: Nanotecnologia; Semicondutores intrínseco; Sistemas de baixa dimensionalidade; Poços, fios e pontos quânticos; Tunelamento quântico; Pacote de ondas; Nanotechnology

Advances in growth techniques have made possible the fabrication of quasi one-dimensional semiconductor structures on nanometric scales, called quantum dots, wires, wells and rings. Interest in these structures has grown considerably not only due to their possible applications in electronic devices and to their easy chemical manipulation, but also because they offer the possibility of experimentally exploring several aspects of quantum confinement, scattering and interference phenomena. In particular, in this work, we investigate the electronic and transport properties in quantum wells, wires and rings, whose dimensions can be achieved experimentally. For this purpose, we solve the time-dependent Schrödinger equation using the split-operator method in two dimensions. We address four different problems: in the first one, the electronic transport properties of a mesoscopic branched out quantum ring are discussed in analogy to the Braess Paradox of game theory, which, in simple words, states that adding an extra path to a traffic network does not necessarily improves its overall flow. In this case, we consider a quantum ringindex{Quantum ring} with an extra channel in its central region, aligned with the input and output leads. This extra channel plays the role of an additional path in a similar way as the extra roads in the classical Braess paradox. Our results show that in this system, surprisingly the transmission coefficient decreases for some values of the extra channel width, similarly to the case of traffic networks in the original Braess problem. We demonstrate that such transmission reduction in our case originates from both quantum scattering and interference effects, and is closely related to recent experimental results in a similar mesoscopic system. In the second work of this thesis, we extend the first system by considering different ring geometries, and by investigating the effects of an external perpendicular magnetic field and of obstructions to the electrons pathways on the transport properties of the system. For narrow widths of the extra channel, it is possible to observe Aharonov-Bohm oscillations in the transmission probability. More importantly, the Aharonov-Bohm phase acquired by the wave function in the presence of the magnetic field allows one to verify in which situations the transmission reduction induced by the extra channel is purely due to interference. We simulate a possible closure of one of the paths by applying a local electrostatic potential, which can be seen as a model for the charged tip of an atomic force microscope (AFM). We show that positioning the AFM tip in the extra channel suppresses the transmission reduction due to the Braess paradox, thus demonstrating that closing the extra path improves the overall transport properties of the system. In the third work, we analyze the tunneling of wave packets between two semiconductor quantum wires separated by a short distance. We investigate the smallest distance at which a significant tunneling between the semiconduting wires still occur. This work is of fundamental importantance for the manufacturing of future nanostructured devices, since it provides information on the minimum reasonable distances between the electron channels in miniaturized electronic circuits, where quantum tunnelling and interference effects will start to play a major role. In the last work of this thesis, we investigate the binding energy of the electron-impurity pair in a GaN/HfO2 quantum well. We consider simultaneously the contributions of all interactions in the self-energy due to the dielectric constant mismatch between materials. We investigate the electron-impurity bound states in quantum wells of several widths, and compared the results for different impurity positions.