Survey on non-isolated high-voltage step-up dc–dc topologies based on the boost converter

• Autor(a) principal: Tofoli, Fernando Lessa
• Data de Publicação: 2015
• Outros Autores: Pereira, Dênis de Castro, Paula, Wesley Josias de, Oliveira Júnior, Demercil de Souza
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da Universidade Federal do Ceará (UFC)
• Texto Completo: http://www.repositorio.ufc.br/handle/riufc/69465
• topic: DC–DC conversion; Reduced stresses involving semiconductors; High-Voltage

The major consideration in dc–dc conversion is often associated with high efficiency, reduced stresses involving semiconductors, low cost, simplicity and robustness of the involved topologies. In the last few years, high-step-up non-isolated dc–dc converters have become quite popular because of its wide applicability, especially considering that dc–ac converters must be typically supplied with high dc voltages. The conventional non-isolated boost converter is the most popular topology for this purpose, although the conversion efficiency is limited at high duty cycle values. In order to overcome such limitation and improve the conversion ratio, derived topologies can be found in numerous publications as possible solutions for the aforementioned applications. Within this context, this work intends to classify and review some of the most important non-isolated boost-based dc–dc converters. While many structures exist, they can be basically classified as converters with and without wide conversion ratio. Some of the main advantages and drawbacks regarding the existing approaches are also discussed. Finally, a proper comparison is established among the most significant converters regarding the voltage stress across the semiconductor elements, number of components and static gain.