Rolled-up quantum wells composed of nanolayered InGaAs/GaAs heterostructures as optical materials for quantum information technology
Autor(a) principal: | |
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Data de Publicação: | 2021 |
Outros Autores: | , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFMG |
Texto Completo: | https://doi.org/10.1021/acsanm.1c00354 http://hdl.handle.net/1843/52585 https://orcid.org/0000-0002-8703-4283 https://orcid.org/0000-0002-8416-3805 https://orcid.org/0000-0002-0865-7379 https://orcid.org/0000-0002-8556-386X https://orcid.org/0000-0003-1127-4990 |
Resumo: | Strain-based band structure engineering is a powerful tool to tune the optical and electronic properties of semiconductor nanostructures. We show that we can tune the band structure of InGaAs semiconductor quantum wells and modify the helicity of the emitted light by integrating them into rolled-up heterostructures and changing their geometrical configuration. Experimental results from photoluminescence and photoluminescence excitation spectroscopy demonstrate a strong energy shift of the valence-band states in comparison to flat structures, as a consequence of an inversion of the heavy-hole with the light-hole states in a rolled-up InGaAs quantum well. The inversion and mixing of the band states lead to a strong change in the optical selection rules for the rolled-up quantum wells, which show vanishing spin polarization in the conduction band even under near-resonant excitation conditions. Band structure calculations are carried out to understand the changes in the electronic transitions and to predict the emission and absorption spectra for a given geometrical configuration. Comparison between experiment and theory shows an excellent agreement. These observed profound changes in the fundamental properties can be applied as a strategic route to develop novel optical devices for quantum information technology. |
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2023-04-27T16:04:59Z2023-04-27T16:04:59Z20214331403147https://doi.org/10.1021/acsanm.1c003542574-0970http://hdl.handle.net/1843/52585https://orcid.org/0000-0002-8703-4283https://orcid.org/0000-0002-8416-3805https://orcid.org/0000-0002-0865-7379https://orcid.org/0000-0002-8556-386Xhttps://orcid.org/0000-0003-1127-4990Strain-based band structure engineering is a powerful tool to tune the optical and electronic properties of semiconductor nanostructures. We show that we can tune the band structure of InGaAs semiconductor quantum wells and modify the helicity of the emitted light by integrating them into rolled-up heterostructures and changing their geometrical configuration. Experimental results from photoluminescence and photoluminescence excitation spectroscopy demonstrate a strong energy shift of the valence-band states in comparison to flat structures, as a consequence of an inversion of the heavy-hole with the light-hole states in a rolled-up InGaAs quantum well. The inversion and mixing of the band states lead to a strong change in the optical selection rules for the rolled-up quantum wells, which show vanishing spin polarization in the conduction band even under near-resonant excitation conditions. Band structure calculations are carried out to understand the changes in the electronic transitions and to predict the emission and absorption spectra for a given geometrical configuration. Comparison between experiment and theory shows an excellent agreement. These observed profound changes in the fundamental properties can be applied as a strategic route to develop novel optical devices for quantum information technology.engUniversidade Federal de Minas GeraisUFMGBrasilICX - DEPARTAMENTO DE FÍSICAACS Applied Nano MaterialsMicrotubosSemicondutoresInformação quânticaBand structure inversionSemiconductor quantum wellOptical selection rulesRolled-up microtubesTensile and compressive hybrid stateCurved semiconductor membraneRolled-up quantum wells composed of nanolayered InGaAs/GaAs heterostructures as optical materials for quantum information technologyinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttps://pubs.acs.org/doi/10.1021/acsanm.1c00354Leonarde do Nascimento RodriguesLucas da ConceiçãoÂngelo Malachias de SouzaOdilon Divino Damasceno Couto JúniorFernando IikawaChristoph Friedrich DenekeDiego Scolfaro da Silvaapplication/pdfinfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFMGinstname:Universidade Federal de Minas Gerais (UFMG)instacron:UFMGLICENSELicense.txtLicense.txttext/plain; charset=utf-82042https://repositorio.ufmg.br/bitstream/1843/52585/1/License.txtfa505098d172de0bc8864fc1287ffe22MD51ORIGINALRolled-Up Quantum Wells Composed of Nanolayered InGaAs GaAs.pdfRolled-Up Quantum Wells Composed of Nanolayered InGaAs GaAs.pdfapplication/pdf3298760https://repositorio.ufmg.br/bitstream/1843/52585/2/Rolled-Up%20Quantum%20Wells%20Composed%20of%20Nanolayered%20InGaAs%20GaAs.pdf48f120ed54d845470fbb760ed5a5fcbfMD521843/525852023-04-27 16:19:35.593oai:repositorio.ufmg.br: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Repositório de PublicaçõesPUBhttps://repositorio.ufmg.br/oaiopendoar:2023-04-27T19:19:35Repositório Institucional da UFMG - Universidade Federal de Minas Gerais (UFMG)false |
dc.title.pt_BR.fl_str_mv |
Rolled-up quantum wells composed of nanolayered InGaAs/GaAs heterostructures as optical materials for quantum information technology |
title |
Rolled-up quantum wells composed of nanolayered InGaAs/GaAs heterostructures as optical materials for quantum information technology |
spellingShingle |
Rolled-up quantum wells composed of nanolayered InGaAs/GaAs heterostructures as optical materials for quantum information technology Leonarde do Nascimento Rodrigues Band structure inversion Semiconductor quantum well Optical selection rules Rolled-up microtubes Tensile and compressive hybrid state Curved semiconductor membrane Microtubos Semicondutores Informação quântica |
title_short |
Rolled-up quantum wells composed of nanolayered InGaAs/GaAs heterostructures as optical materials for quantum information technology |
title_full |
Rolled-up quantum wells composed of nanolayered InGaAs/GaAs heterostructures as optical materials for quantum information technology |
title_fullStr |
Rolled-up quantum wells composed of nanolayered InGaAs/GaAs heterostructures as optical materials for quantum information technology |
title_full_unstemmed |
Rolled-up quantum wells composed of nanolayered InGaAs/GaAs heterostructures as optical materials for quantum information technology |
title_sort |
Rolled-up quantum wells composed of nanolayered InGaAs/GaAs heterostructures as optical materials for quantum information technology |
author |
Leonarde do Nascimento Rodrigues |
author_facet |
Leonarde do Nascimento Rodrigues Lucas da Conceição Ângelo Malachias de Souza Odilon Divino Damasceno Couto Júnior Fernando Iikawa Christoph Friedrich Deneke Diego Scolfaro da Silva |
author_role |
author |
author2 |
Lucas da Conceição Ângelo Malachias de Souza Odilon Divino Damasceno Couto Júnior Fernando Iikawa Christoph Friedrich Deneke Diego Scolfaro da Silva |
author2_role |
author author author author author author |
dc.contributor.author.fl_str_mv |
Leonarde do Nascimento Rodrigues Lucas da Conceição Ângelo Malachias de Souza Odilon Divino Damasceno Couto Júnior Fernando Iikawa Christoph Friedrich Deneke Diego Scolfaro da Silva |
dc.subject.por.fl_str_mv |
Band structure inversion Semiconductor quantum well Optical selection rules Rolled-up microtubes Tensile and compressive hybrid state Curved semiconductor membrane |
topic |
Band structure inversion Semiconductor quantum well Optical selection rules Rolled-up microtubes Tensile and compressive hybrid state Curved semiconductor membrane Microtubos Semicondutores Informação quântica |
dc.subject.other.pt_BR.fl_str_mv |
Microtubos Semicondutores Informação quântica |
description |
Strain-based band structure engineering is a powerful tool to tune the optical and electronic properties of semiconductor nanostructures. We show that we can tune the band structure of InGaAs semiconductor quantum wells and modify the helicity of the emitted light by integrating them into rolled-up heterostructures and changing their geometrical configuration. Experimental results from photoluminescence and photoluminescence excitation spectroscopy demonstrate a strong energy shift of the valence-band states in comparison to flat structures, as a consequence of an inversion of the heavy-hole with the light-hole states in a rolled-up InGaAs quantum well. The inversion and mixing of the band states lead to a strong change in the optical selection rules for the rolled-up quantum wells, which show vanishing spin polarization in the conduction band even under near-resonant excitation conditions. Band structure calculations are carried out to understand the changes in the electronic transitions and to predict the emission and absorption spectra for a given geometrical configuration. Comparison between experiment and theory shows an excellent agreement. These observed profound changes in the fundamental properties can be applied as a strategic route to develop novel optical devices for quantum information technology. |
publishDate |
2021 |
dc.date.issued.fl_str_mv |
2021 |
dc.date.accessioned.fl_str_mv |
2023-04-27T16:04:59Z |
dc.date.available.fl_str_mv |
2023-04-27T16:04:59Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/1843/52585 |
dc.identifier.doi.pt_BR.fl_str_mv |
https://doi.org/10.1021/acsanm.1c00354 |
dc.identifier.issn.pt_BR.fl_str_mv |
2574-0970 |
dc.identifier.orcid.pt_BR.fl_str_mv |
https://orcid.org/0000-0002-8703-4283 https://orcid.org/0000-0002-8416-3805 https://orcid.org/0000-0002-0865-7379 https://orcid.org/0000-0002-8556-386X https://orcid.org/0000-0003-1127-4990 |
url |
https://doi.org/10.1021/acsanm.1c00354 http://hdl.handle.net/1843/52585 https://orcid.org/0000-0002-8703-4283 https://orcid.org/0000-0002-8416-3805 https://orcid.org/0000-0002-0865-7379 https://orcid.org/0000-0002-8556-386X https://orcid.org/0000-0003-1127-4990 |
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2574-0970 |
dc.language.iso.fl_str_mv |
eng |
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eng |
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ACS Applied Nano Materials |
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openAccess |
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application/pdf |
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Universidade Federal de Minas Gerais |
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UFMG |
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Brasil |
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ICX - DEPARTAMENTO DE FÍSICA |
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Universidade Federal de Minas Gerais |
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