Oxygen diffusion in pure and doped ZnO.

• Autor(a) principal: Sabioni, Antônio Claret Soares
• Data de Publicação: 2003
• Outros Autores: Ramos, Marcelo José Ferreira, Ferraz, Wilmar Barbosa
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFOP
• Texto Completo: http://www.repositorio.ufop.br/handle/123456789/1126
• topic: Point defects; Varistor; Oxygen diffusion; Zinc oxide

Oxygen diffusion coefficients in pure and doped ZnO polycrystals were determined by means of the gas-solid isotope exchange method using the isotope 18O as oxygen tracer. The diffusion experiments were performed from 900 to 1000 °C, under an oxygen pressure of 105 Pa. After the diffusion annealings, the 18O diffusion profiles were determined by secondary ion mass spectrometry. The results of the experiments show that oxygen diffusion in Li-doped ZnO is similar to the oxygen diffusion in pure ZnO, while in Al-doped ZnO the oxygen diffusion is enhanced in relation to that observed in pure ZnO, in the same experimental conditions. Based on these results is proposed an interstitial mechanism for oxygen diffusion in ZnO. Moreover, it was found that oxygen grain-boundary diffusion is ca. 3 to 4 orders of magnitude greater than oxygen volume diffusion in pure and doped ZnO, which means that the grain-boundary is a fast path for oxygen diffusion in ZnO.