SiO2 single layer for reduction of the standing wave effects in the interference lithography of deep photoresist structures on Si.
Autor(a) principal: | |
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Data de Publicação: | 2006 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFOP |
Texto Completo: | http://www.repositorio.ufop.br/handle/123456789/1866 |
Resumo: | We demonstrate that the use of a single SiO2 film, with thickness corresponding to one standing wave (SW) period allows the recording of deep photoresist structures on silicon substrates by laser interference, without use of any additional antireflecting coating. This condition corresponds just to the opposite thickness (half SW period) previously proposed for using the SiO2 films for phase-shifting the SW pattern. Theoretical and experimental results demonstrated that for the lithography of deep structures, the contrast of the SW pattern, the minimum light intensity of the SW pattern and the photoresist adhesion are the most important parameters of the process. |
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Carvalho, Edson José deAlves, Marco Antônio RobertBraga, Edmundo da SilvaCescato, Lucila Helena Deliesposte2012-11-28T17:32:24Z2012-11-28T17:32:24Z2006CARVALHO, E. J. et al. SiO2 single layer for reduction of the standing wave effects in the interference lithography of deep photoresist structures on Si. Microelectronics Journal , v. 37, p. 1265-1270, 2006. Disponível em: <https://www.sciencedirect.com/science/article/pii/S0026269206001959>. Acesso em: 28/11/2012.00262692http://www.repositorio.ufop.br/handle/123456789/1866We demonstrate that the use of a single SiO2 film, with thickness corresponding to one standing wave (SW) period allows the recording of deep photoresist structures on silicon substrates by laser interference, without use of any additional antireflecting coating. This condition corresponds just to the opposite thickness (half SW period) previously proposed for using the SiO2 films for phase-shifting the SW pattern. Theoretical and experimental results demonstrated that for the lithography of deep structures, the contrast of the SW pattern, the minimum light intensity of the SW pattern and the photoresist adhesion are the most important parameters of the process.Interference lithographyDeep photoresist structuresStanding wave patternSiO2 single layer for reduction of the standing wave effects in the interference lithography of deep photoresist structures on Si.info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleO periódico Microelectronics Journal concede permissão para depósito do artigo no Repositório Institucional da UFOP. Número da licença: 3306990459953.info:eu-repo/semantics/openAccessengreponame:Repositório Institucional da UFOPinstname:Universidade Federal de Ouro Preto (UFOP)instacron:UFOPLICENSElicense.txtlicense.txttext/plain; charset=utf-81748http://www.repositorio.ufop.br/bitstream/123456789/1866/2/license.txt8a4605be74aa9ea9d79846c1fba20a33MD52ORIGINALARTIGO_SiO2SingleLayer.pdfARTIGO_SiO2SingleLayer.pdfapplication/pdf356460http://www.repositorio.ufop.br/bitstream/123456789/1866/1/ARTIGO_SiO2SingleLayer.pdfdb78344ea9bad6692331ea443c1f2dfcMD51123456789/18662019-03-13 14:15:16.705oai:localhost: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Repositório InstitucionalPUBhttp://www.repositorio.ufop.br/oai/requestrepositorio@ufop.edu.bropendoar:32332019-03-13T18:15:16Repositório Institucional da UFOP - Universidade Federal de Ouro Preto (UFOP)false |
dc.title.pt_BR.fl_str_mv |
SiO2 single layer for reduction of the standing wave effects in the interference lithography of deep photoresist structures on Si. |
title |
SiO2 single layer for reduction of the standing wave effects in the interference lithography of deep photoresist structures on Si. |
spellingShingle |
SiO2 single layer for reduction of the standing wave effects in the interference lithography of deep photoresist structures on Si. Carvalho, Edson José de Interference lithography Deep photoresist structures Standing wave pattern |
title_short |
SiO2 single layer for reduction of the standing wave effects in the interference lithography of deep photoresist structures on Si. |
title_full |
SiO2 single layer for reduction of the standing wave effects in the interference lithography of deep photoresist structures on Si. |
title_fullStr |
SiO2 single layer for reduction of the standing wave effects in the interference lithography of deep photoresist structures on Si. |
title_full_unstemmed |
SiO2 single layer for reduction of the standing wave effects in the interference lithography of deep photoresist structures on Si. |
title_sort |
SiO2 single layer for reduction of the standing wave effects in the interference lithography of deep photoresist structures on Si. |
author |
Carvalho, Edson José de |
author_facet |
Carvalho, Edson José de Alves, Marco Antônio Robert Braga, Edmundo da Silva Cescato, Lucila Helena Deliesposte |
author_role |
author |
author2 |
Alves, Marco Antônio Robert Braga, Edmundo da Silva Cescato, Lucila Helena Deliesposte |
author2_role |
author author author |
dc.contributor.author.fl_str_mv |
Carvalho, Edson José de Alves, Marco Antônio Robert Braga, Edmundo da Silva Cescato, Lucila Helena Deliesposte |
dc.subject.por.fl_str_mv |
Interference lithography Deep photoresist structures Standing wave pattern |
topic |
Interference lithography Deep photoresist structures Standing wave pattern |
description |
We demonstrate that the use of a single SiO2 film, with thickness corresponding to one standing wave (SW) period allows the recording of deep photoresist structures on silicon substrates by laser interference, without use of any additional antireflecting coating. This condition corresponds just to the opposite thickness (half SW period) previously proposed for using the SiO2 films for phase-shifting the SW pattern. Theoretical and experimental results demonstrated that for the lithography of deep structures, the contrast of the SW pattern, the minimum light intensity of the SW pattern and the photoresist adhesion are the most important parameters of the process. |
publishDate |
2006 |
dc.date.issued.fl_str_mv |
2006 |
dc.date.accessioned.fl_str_mv |
2012-11-28T17:32:24Z |
dc.date.available.fl_str_mv |
2012-11-28T17:32:24Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.citation.fl_str_mv |
CARVALHO, E. J. et al. SiO2 single layer for reduction of the standing wave effects in the interference lithography of deep photoresist structures on Si. Microelectronics Journal , v. 37, p. 1265-1270, 2006. Disponível em: <https://www.sciencedirect.com/science/article/pii/S0026269206001959>. Acesso em: 28/11/2012. |
dc.identifier.uri.fl_str_mv |
http://www.repositorio.ufop.br/handle/123456789/1866 |
dc.identifier.issn.none.fl_str_mv |
00262692 |
identifier_str_mv |
CARVALHO, E. J. et al. SiO2 single layer for reduction of the standing wave effects in the interference lithography of deep photoresist structures on Si. Microelectronics Journal , v. 37, p. 1265-1270, 2006. Disponível em: <https://www.sciencedirect.com/science/article/pii/S0026269206001959>. Acesso em: 28/11/2012. 00262692 |
url |
http://www.repositorio.ufop.br/handle/123456789/1866 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
reponame:Repositório Institucional da UFOP instname:Universidade Federal de Ouro Preto (UFOP) instacron:UFOP |
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Universidade Federal de Ouro Preto (UFOP) |
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UFOP |
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UFOP |
reponame_str |
Repositório Institucional da UFOP |
collection |
Repositório Institucional da UFOP |
bitstream.url.fl_str_mv |
http://www.repositorio.ufop.br/bitstream/123456789/1866/2/license.txt http://www.repositorio.ufop.br/bitstream/123456789/1866/1/ARTIGO_SiO2SingleLayer.pdf |
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repositorio@ufop.edu.br |
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1801685759916244992 |