Heavily n-doped Ge : low-temperature magnetoresistance properties on the metallic side of the metal–nonmetal transition

Detalhes bibliográficos
Autor(a) principal: Silva, Antonio Ferreira da
Data de Publicação: 2020
Outros Autores: Sandoval, Marcelo A. Toloza, Levine, Alexandre, Levinson, Eduard, Boudinov, Henri Ivanov, Sernelius, Bo E.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/218537
Resumo: We report here an experimental and theoretical study on the magnetoresistance properties of heavily phosphorous doped germanium on the metallic side of the metal–nonmetal transition. An anomalous regime, formed by negative values of the magnetoresistance, was observed by performing low-temperature measurements and explained within the generalized Drude model, due to the many-body effects. It reveals a key mechanism behind the magnetoresistance properties at low temperatures and, therefore, constitutes a path to its manipulation in such materials of great interest in fundamental physics and technological applications.
id UFRGS-2_01631b904e68103effdaae6cb66acc8a
oai_identifier_str oai:www.lume.ufrgs.br:10183/218537
network_acronym_str UFRGS-2
network_name_str Repositório Institucional da UFRGS
repository_id_str
spelling Silva, Antonio Ferreira daSandoval, Marcelo A. TolozaLevine, AlexandreLevinson, EduardBoudinov, Henri IvanovSernelius, Bo E.2021-03-10T04:21:35Z20200021-8979http://hdl.handle.net/10183/218537001122432We report here an experimental and theoretical study on the magnetoresistance properties of heavily phosphorous doped germanium on the metallic side of the metal–nonmetal transition. An anomalous regime, formed by negative values of the magnetoresistance, was observed by performing low-temperature measurements and explained within the generalized Drude model, due to the many-body effects. It reveals a key mechanism behind the magnetoresistance properties at low temperatures and, therefore, constitutes a path to its manipulation in such materials of great interest in fundamental physics and technological applications.application/pdfengJournal of applied physics. New York. Vol. 127, no. 4 (Jan. 2020), 045705, 7 p.MagnetorresistênciaDopagemGermânioCampos magnéticosHeavily n-doped Ge : low-temperature magnetoresistance properties on the metallic side of the metal–nonmetal transitionEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSTEXT001122432.pdf.txt001122432.pdf.txtExtracted Texttext/plain25826http://www.lume.ufrgs.br/bitstream/10183/218537/2/001122432.pdf.txt71307a0447de4e52bc9589a994877008MD52ORIGINAL001122432.pdfTexto completo (inglês)application/pdf1579910http://www.lume.ufrgs.br/bitstream/10183/218537/1/001122432.pdf6d431f52f5bd0f552824255cb670a47bMD5110183/2185372021-05-07 04:45:19.094154oai:www.lume.ufrgs.br:10183/218537Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2021-05-07T07:45:19Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Heavily n-doped Ge : low-temperature magnetoresistance properties on the metallic side of the metal–nonmetal transition
title Heavily n-doped Ge : low-temperature magnetoresistance properties on the metallic side of the metal–nonmetal transition
spellingShingle Heavily n-doped Ge : low-temperature magnetoresistance properties on the metallic side of the metal–nonmetal transition
Silva, Antonio Ferreira da
Magnetorresistência
Dopagem
Germânio
Campos magnéticos
title_short Heavily n-doped Ge : low-temperature magnetoresistance properties on the metallic side of the metal–nonmetal transition
title_full Heavily n-doped Ge : low-temperature magnetoresistance properties on the metallic side of the metal–nonmetal transition
title_fullStr Heavily n-doped Ge : low-temperature magnetoresistance properties on the metallic side of the metal–nonmetal transition
title_full_unstemmed Heavily n-doped Ge : low-temperature magnetoresistance properties on the metallic side of the metal–nonmetal transition
title_sort Heavily n-doped Ge : low-temperature magnetoresistance properties on the metallic side of the metal–nonmetal transition
author Silva, Antonio Ferreira da
author_facet Silva, Antonio Ferreira da
Sandoval, Marcelo A. Toloza
Levine, Alexandre
Levinson, Eduard
Boudinov, Henri Ivanov
Sernelius, Bo E.
author_role author
author2 Sandoval, Marcelo A. Toloza
Levine, Alexandre
Levinson, Eduard
Boudinov, Henri Ivanov
Sernelius, Bo E.
author2_role author
author
author
author
author
dc.contributor.author.fl_str_mv Silva, Antonio Ferreira da
Sandoval, Marcelo A. Toloza
Levine, Alexandre
Levinson, Eduard
Boudinov, Henri Ivanov
Sernelius, Bo E.
dc.subject.por.fl_str_mv Magnetorresistência
Dopagem
Germânio
Campos magnéticos
topic Magnetorresistência
Dopagem
Germânio
Campos magnéticos
description We report here an experimental and theoretical study on the magnetoresistance properties of heavily phosphorous doped germanium on the metallic side of the metal–nonmetal transition. An anomalous regime, formed by negative values of the magnetoresistance, was observed by performing low-temperature measurements and explained within the generalized Drude model, due to the many-body effects. It reveals a key mechanism behind the magnetoresistance properties at low temperatures and, therefore, constitutes a path to its manipulation in such materials of great interest in fundamental physics and technological applications.
publishDate 2020
dc.date.issued.fl_str_mv 2020
dc.date.accessioned.fl_str_mv 2021-03-10T04:21:35Z
dc.type.driver.fl_str_mv Estrangeiro
info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/218537
dc.identifier.issn.pt_BR.fl_str_mv 0021-8979
dc.identifier.nrb.pt_BR.fl_str_mv 001122432
identifier_str_mv 0021-8979
001122432
url http://hdl.handle.net/10183/218537
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Journal of applied physics. New York. Vol. 127, no. 4 (Jan. 2020), 045705, 7 p.
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFRGS
instname:Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
instname_str Universidade Federal do Rio Grande do Sul (UFRGS)
instacron_str UFRGS
institution UFRGS
reponame_str Repositório Institucional da UFRGS
collection Repositório Institucional da UFRGS
bitstream.url.fl_str_mv http://www.lume.ufrgs.br/bitstream/10183/218537/2/001122432.pdf.txt
http://www.lume.ufrgs.br/bitstream/10183/218537/1/001122432.pdf
bitstream.checksum.fl_str_mv 71307a0447de4e52bc9589a994877008
6d431f52f5bd0f552824255cb670a47b
bitstream.checksumAlgorithm.fl_str_mv MD5
MD5
repository.name.fl_str_mv Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)
repository.mail.fl_str_mv
_version_ 1801225009549541376

Registros relacionados