Temperature dependence of the electric field gradient generated by nearest-neighbor impurity atoms in cubic Ag metal
Autor(a) principal: | |
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Data de Publicação: | 1978 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/104160 |
Resumo: | The electric quadrupole interactions produced by near-neighbor (nn) and distant-neighbor impurity atoms of Cu, Au, Zn, In, Ga, Al, Sn, and Sb in a cubic Ag lattice are measured as a function of the temperature by the time differential perturbed angular correlation method. The results show that both the high-frequency interaction vhQ-generated by nn impurities-and the low-frequency interaction v1Q- generated by distant impurities-follow the relation vQ(T) = vQ(O) (I -a T 312). From the present measurements it can be concluded that both coefficients, ∝h and ∝1 are strongly dependent on the mass M of the impurity. For the case of Al, Ga, and In impurities with the same charge difference ∆Z = 2 between host and impurity, both ∝h and ∝1 scale as M-n with n = 0.37 ±0.04 and n = 0.9 ±0.4, respectively. lt is shown that for a Sn impurity the unnormalized slope ∝h ·vhQ(O) is independent of the concentration in the range 1.5-3 at. %. A strong dependence of ∝h and ∝1 on ∆Z, the charge difference between host and impurity, is also observed; however, the results do not follow a simple relation. |
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Baumvol, Israel Jacob RabinBehar, MoniIglesias, Jose RobertoLivi, Rogerio PohlmannZawislak, Fernando Claudio2014-10-04T02:13:20Z19780163-1829http://hdl.handle.net/10183/104160000145363The electric quadrupole interactions produced by near-neighbor (nn) and distant-neighbor impurity atoms of Cu, Au, Zn, In, Ga, Al, Sn, and Sb in a cubic Ag lattice are measured as a function of the temperature by the time differential perturbed angular correlation method. The results show that both the high-frequency interaction vhQ-generated by nn impurities-and the low-frequency interaction v1Q- generated by distant impurities-follow the relation vQ(T) = vQ(O) (I -a T 312). From the present measurements it can be concluded that both coefficients, ∝h and ∝1 are strongly dependent on the mass M of the impurity. For the case of Al, Ga, and In impurities with the same charge difference ∆Z = 2 between host and impurity, both ∝h and ∝1 scale as M-n with n = 0.37 ±0.04 and n = 0.9 ±0.4, respectively. lt is shown that for a Sn impurity the unnormalized slope ∝h ·vhQ(O) is independent of the concentration in the range 1.5-3 at. %. A strong dependence of ∝h and ∝1 on ∆Z, the charge difference between host and impurity, is also observed; however, the results do not follow a simple relation.application/pdfengPhysical review. B, Condensed matter. New York. Vol. 18, n. 12 (Dec. 1978), p. 6713-6718Física da matéria condensadaEspectros raios gamaImpurezasTemperature dependence of the electric field gradient generated by nearest-neighbor impurity atoms in cubic Ag metalEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000145363.pdf000145363.pdfTexto completo (inglês)application/pdf705042http://www.lume.ufrgs.br/bitstream/10183/104160/1/000145363.pdfdc0608c404f88a22d3d91356ef2337f4MD51TEXT000145363.pdf.txt000145363.pdf.txtExtracted Texttext/plain20422http://www.lume.ufrgs.br/bitstream/10183/104160/2/000145363.pdf.txt88a0a35d228d4b11b67dfd1357efbb15MD52THUMBNAIL000145363.pdf.jpg000145363.pdf.jpgGenerated Thumbnailimage/jpeg1872http://www.lume.ufrgs.br/bitstream/10183/104160/3/000145363.pdf.jpga2986f4d46043dda19fe1c054117b443MD5310183/1041602018-10-08 08:59:13.663oai:www.lume.ufrgs.br:10183/104160Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2018-10-08T11:59:13Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Temperature dependence of the electric field gradient generated by nearest-neighbor impurity atoms in cubic Ag metal |
title |
Temperature dependence of the electric field gradient generated by nearest-neighbor impurity atoms in cubic Ag metal |
spellingShingle |
Temperature dependence of the electric field gradient generated by nearest-neighbor impurity atoms in cubic Ag metal Baumvol, Israel Jacob Rabin Física da matéria condensada Espectros raios gama Impurezas |
title_short |
Temperature dependence of the electric field gradient generated by nearest-neighbor impurity atoms in cubic Ag metal |
title_full |
Temperature dependence of the electric field gradient generated by nearest-neighbor impurity atoms in cubic Ag metal |
title_fullStr |
Temperature dependence of the electric field gradient generated by nearest-neighbor impurity atoms in cubic Ag metal |
title_full_unstemmed |
Temperature dependence of the electric field gradient generated by nearest-neighbor impurity atoms in cubic Ag metal |
title_sort |
Temperature dependence of the electric field gradient generated by nearest-neighbor impurity atoms in cubic Ag metal |
author |
Baumvol, Israel Jacob Rabin |
author_facet |
Baumvol, Israel Jacob Rabin Behar, Moni Iglesias, Jose Roberto Livi, Rogerio Pohlmann Zawislak, Fernando Claudio |
author_role |
author |
author2 |
Behar, Moni Iglesias, Jose Roberto Livi, Rogerio Pohlmann Zawislak, Fernando Claudio |
author2_role |
author author author author |
dc.contributor.author.fl_str_mv |
Baumvol, Israel Jacob Rabin Behar, Moni Iglesias, Jose Roberto Livi, Rogerio Pohlmann Zawislak, Fernando Claudio |
dc.subject.por.fl_str_mv |
Física da matéria condensada Espectros raios gama Impurezas |
topic |
Física da matéria condensada Espectros raios gama Impurezas |
description |
The electric quadrupole interactions produced by near-neighbor (nn) and distant-neighbor impurity atoms of Cu, Au, Zn, In, Ga, Al, Sn, and Sb in a cubic Ag lattice are measured as a function of the temperature by the time differential perturbed angular correlation method. The results show that both the high-frequency interaction vhQ-generated by nn impurities-and the low-frequency interaction v1Q- generated by distant impurities-follow the relation vQ(T) = vQ(O) (I -a T 312). From the present measurements it can be concluded that both coefficients, ∝h and ∝1 are strongly dependent on the mass M of the impurity. For the case of Al, Ga, and In impurities with the same charge difference ∆Z = 2 between host and impurity, both ∝h and ∝1 scale as M-n with n = 0.37 ±0.04 and n = 0.9 ±0.4, respectively. lt is shown that for a Sn impurity the unnormalized slope ∝h ·vhQ(O) is independent of the concentration in the range 1.5-3 at. %. A strong dependence of ∝h and ∝1 on ∆Z, the charge difference between host and impurity, is also observed; however, the results do not follow a simple relation. |
publishDate |
1978 |
dc.date.issued.fl_str_mv |
1978 |
dc.date.accessioned.fl_str_mv |
2014-10-04T02:13:20Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
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info:eu-repo/semantics/publishedVersion |
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article |
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publishedVersion |
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http://hdl.handle.net/10183/104160 |
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0163-1829 |
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000145363 |
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http://hdl.handle.net/10183/104160 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Physical review. B, Condensed matter. New York. Vol. 18, n. 12 (Dec. 1978), p. 6713-6718 |
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openAccess |
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