Defects controlling electrical and optical properties of electrodeposited Bi doped Cu2O
Autor(a) principal: | |
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Data de Publicação: | 2018 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/187933 |
Resumo: | Doping leading to low electrical resistivity in electrodeposited thin films of Cu2O is a straightforward requirement for the construction of efficient electronic and energy devices. Here, Bi (7 at. %) doped Cu2O layers were deposited electrochemically onto Si(100) single-crystal substrates from aqueous solutions containing bismuth nitrate and cupric sulfate. X-ray photoelectron spectroscopy shows that Bi ions in a Cu2O lattice have an oxidation valence of 3þ and glancing angle X-ray diffraction measurements indicated no presence of secondary phases. The reduction in the electrical resistivity from undoped to Bi-doped Cu2O is of 4 and 2 orders of magnitude for electrical measurements at 230 and 300 K, respectively. From variations in the lattice parameter and the refractive index, the electrical resistivity decrease is addressed to an increase in the density of Cu vacancies. Density functional theory (DFT) calculations supported the experimental findings. The DFT results showed that in a 6% Bi doped Cu2O cell, the formation of Cu vacancies is more favorable than in an undoped Cu2O one. Moreover, from DFT data was observed that there is an increase (decrease) of the Cu2O band gap (activation energy) for 6% Bi doping, which is consistent with the experimental results. |
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Brandt, Iuri StefaniTumelero, Milton AndréMartins, Cesar AugustoCampos, Cristiani SilveiraFaccio, RicardoPasa, Andre Avelino2019-01-19T02:33:39Z20180021-8979http://hdl.handle.net/10183/187933001072423Doping leading to low electrical resistivity in electrodeposited thin films of Cu2O is a straightforward requirement for the construction of efficient electronic and energy devices. Here, Bi (7 at. %) doped Cu2O layers were deposited electrochemically onto Si(100) single-crystal substrates from aqueous solutions containing bismuth nitrate and cupric sulfate. X-ray photoelectron spectroscopy shows that Bi ions in a Cu2O lattice have an oxidation valence of 3þ and glancing angle X-ray diffraction measurements indicated no presence of secondary phases. The reduction in the electrical resistivity from undoped to Bi-doped Cu2O is of 4 and 2 orders of magnitude for electrical measurements at 230 and 300 K, respectively. From variations in the lattice parameter and the refractive index, the electrical resistivity decrease is addressed to an increase in the density of Cu vacancies. Density functional theory (DFT) calculations supported the experimental findings. The DFT results showed that in a 6% Bi doped Cu2O cell, the formation of Cu vacancies is more favorable than in an undoped Cu2O one. Moreover, from DFT data was observed that there is an increase (decrease) of the Cu2O band gap (activation energy) for 6% Bi doping, which is consistent with the experimental results.application/pdfengJournal of applied physics. New York. Vol. 123, no. 16 (Apr. 2018), 161412, 11 p.Filmes finos supercondutoresDopagemTeoria do funcional de densidadeÓxido de cobreEletrodeposiçãoDefects controlling electrical and optical properties of electrodeposited Bi doped Cu2OEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSTEXT001072423.pdf.txt001072423.pdf.txtExtracted Texttext/plain47740http://www.lume.ufrgs.br/bitstream/10183/187933/2/001072423.pdf.txta19fc670b72e49d82953b4d9790ffbdaMD52ORIGINAL001072423.pdfTexto completo (inglês)application/pdf3194609http://www.lume.ufrgs.br/bitstream/10183/187933/1/001072423.pdfcb21749150ab1365099374c212461595MD5110183/1879332023-08-11 03:53:39.446076oai:www.lume.ufrgs.br:10183/187933Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2023-08-11T06:53:39Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Defects controlling electrical and optical properties of electrodeposited Bi doped Cu2O |
title |
Defects controlling electrical and optical properties of electrodeposited Bi doped Cu2O |
spellingShingle |
Defects controlling electrical and optical properties of electrodeposited Bi doped Cu2O Brandt, Iuri Stefani Filmes finos supercondutores Dopagem Teoria do funcional de densidade Óxido de cobre Eletrodeposição |
title_short |
Defects controlling electrical and optical properties of electrodeposited Bi doped Cu2O |
title_full |
Defects controlling electrical and optical properties of electrodeposited Bi doped Cu2O |
title_fullStr |
Defects controlling electrical and optical properties of electrodeposited Bi doped Cu2O |
title_full_unstemmed |
Defects controlling electrical and optical properties of electrodeposited Bi doped Cu2O |
title_sort |
Defects controlling electrical and optical properties of electrodeposited Bi doped Cu2O |
author |
Brandt, Iuri Stefani |
author_facet |
Brandt, Iuri Stefani Tumelero, Milton André Martins, Cesar Augusto Campos, Cristiani Silveira Faccio, Ricardo Pasa, Andre Avelino |
author_role |
author |
author2 |
Tumelero, Milton André Martins, Cesar Augusto Campos, Cristiani Silveira Faccio, Ricardo Pasa, Andre Avelino |
author2_role |
author author author author author |
dc.contributor.author.fl_str_mv |
Brandt, Iuri Stefani Tumelero, Milton André Martins, Cesar Augusto Campos, Cristiani Silveira Faccio, Ricardo Pasa, Andre Avelino |
dc.subject.por.fl_str_mv |
Filmes finos supercondutores Dopagem Teoria do funcional de densidade Óxido de cobre Eletrodeposição |
topic |
Filmes finos supercondutores Dopagem Teoria do funcional de densidade Óxido de cobre Eletrodeposição |
description |
Doping leading to low electrical resistivity in electrodeposited thin films of Cu2O is a straightforward requirement for the construction of efficient electronic and energy devices. Here, Bi (7 at. %) doped Cu2O layers were deposited electrochemically onto Si(100) single-crystal substrates from aqueous solutions containing bismuth nitrate and cupric sulfate. X-ray photoelectron spectroscopy shows that Bi ions in a Cu2O lattice have an oxidation valence of 3þ and glancing angle X-ray diffraction measurements indicated no presence of secondary phases. The reduction in the electrical resistivity from undoped to Bi-doped Cu2O is of 4 and 2 orders of magnitude for electrical measurements at 230 and 300 K, respectively. From variations in the lattice parameter and the refractive index, the electrical resistivity decrease is addressed to an increase in the density of Cu vacancies. Density functional theory (DFT) calculations supported the experimental findings. The DFT results showed that in a 6% Bi doped Cu2O cell, the formation of Cu vacancies is more favorable than in an undoped Cu2O one. Moreover, from DFT data was observed that there is an increase (decrease) of the Cu2O band gap (activation energy) for 6% Bi doping, which is consistent with the experimental results. |
publishDate |
2018 |
dc.date.issued.fl_str_mv |
2018 |
dc.date.accessioned.fl_str_mv |
2019-01-19T02:33:39Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
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publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10183/187933 |
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0021-8979 |
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001072423 |
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http://hdl.handle.net/10183/187933 |
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eng |
language |
eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Journal of applied physics. New York. Vol. 123, no. 16 (Apr. 2018), 161412, 11 p. |
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info:eu-repo/semantics/openAccess |
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openAccess |
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application/pdf |
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