Exchange bias in a ferromagnet/antiferromagnet system with TCTN

Detalhes bibliográficos
Autor(a) principal: Sossmeier, K.D.
Data de Publicação: 2011
Outros Autores: Pereira, Luis Gustavo, Schmidt, Joao Edgar, Geshev, Julian Penkov
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/96284
Resumo: This paper reports experimental results obtained on an unconventional exchange bias (EB) system where the ferromagnetic layer, Ni0.75Cu0.25, has lower ordering temperature (TC) than that (TN) of the antiferromagnetic one, NiO, with emphasis on modifying EB through either magnetic annealing or light-ion irradiation. Samples were cooled from temperatures higher than TN or in between TC and TN to room temperature with magnetic field applied in different in-plane directions. Upon ion irradiation, magnetic fields, parallel or antiparallel to the orientation of the field present during the films deposition, were applied to explore different effects on EB. We found that the EB direction can be completely reversed by means of either annealing or ion bombardment; however, both postdeposition treatments provide very little variation of the EB field value over that produced during the film’s growth. The importance of the annealing field strength was also discussed. The results were interpreted based on a mechanism which assumes that the interfacial moments adjacent to the antiferromagnetic layer are responsible for establishing the exchange biasing in the paramagnetic state.
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spelling Sossmeier, K.D.Pereira, Luis GustavoSchmidt, Joao EdgarGeshev, Julian Penkov2014-06-10T02:05:15Z20110021-8979http://hdl.handle.net/10183/96284000820510This paper reports experimental results obtained on an unconventional exchange bias (EB) system where the ferromagnetic layer, Ni0.75Cu0.25, has lower ordering temperature (TC) than that (TN) of the antiferromagnetic one, NiO, with emphasis on modifying EB through either magnetic annealing or light-ion irradiation. Samples were cooled from temperatures higher than TN or in between TC and TN to room temperature with magnetic field applied in different in-plane directions. Upon ion irradiation, magnetic fields, parallel or antiparallel to the orientation of the field present during the films deposition, were applied to explore different effects on EB. We found that the EB direction can be completely reversed by means of either annealing or ion bombardment; however, both postdeposition treatments provide very little variation of the EB field value over that produced during the film’s growth. The importance of the annealing field strength was also discussed. The results were interpreted based on a mechanism which assumes that the interfacial moments adjacent to the antiferromagnetic layer are responsible for establishing the exchange biasing in the paramagnetic state.application/pdfengJournal of applied physics. Vol. 109, no. 8 (Apr. 2011), 083938, 5 p.Materiais ferromagnéticosMateriais antiferromagnéticosMateriais paramagnéticosCampos magnéticosEfeitos de feixe iônicoEsfriamentoFilmes finos magneticosPolarização por intercâmbioLigas de níquelLigas de cobreExchange bias in a ferromagnet/antiferromagnet system with TCTNEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000820510.pdf000820510.pdfTexto completo (inglês)application/pdf1667000http://www.lume.ufrgs.br/bitstream/10183/96284/1/000820510.pdfb96d2e528fc98bbba1d5e3c9a941cadeMD51TEXT000820510.pdf.txt000820510.pdf.txtExtracted Texttext/plain28965http://www.lume.ufrgs.br/bitstream/10183/96284/2/000820510.pdf.txtbd5fb93c8fcac58083e8883814606ee7MD52THUMBNAIL000820510.pdf.jpg000820510.pdf.jpgGenerated Thumbnailimage/jpeg1782http://www.lume.ufrgs.br/bitstream/10183/96284/3/000820510.pdf.jpg7659dea391823497dbb4567ab3e930d3MD5310183/962842023-09-20 03:30:35.396658oai:www.lume.ufrgs.br:10183/96284Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2023-09-20T06:30:35Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Exchange bias in a ferromagnet/antiferromagnet system with TCTN
title Exchange bias in a ferromagnet/antiferromagnet system with TCTN
spellingShingle Exchange bias in a ferromagnet/antiferromagnet system with TCTN
Sossmeier, K.D.
Materiais ferromagnéticos
Materiais antiferromagnéticos
Materiais paramagnéticos
Campos magnéticos
Efeitos de feixe iônico
Esfriamento
Filmes finos magneticos
Polarização por intercâmbio
Ligas de níquel
Ligas de cobre
title_short Exchange bias in a ferromagnet/antiferromagnet system with TCTN
title_full Exchange bias in a ferromagnet/antiferromagnet system with TCTN
title_fullStr Exchange bias in a ferromagnet/antiferromagnet system with TCTN
title_full_unstemmed Exchange bias in a ferromagnet/antiferromagnet system with TCTN
title_sort Exchange bias in a ferromagnet/antiferromagnet system with TCTN
author Sossmeier, K.D.
author_facet Sossmeier, K.D.
Pereira, Luis Gustavo
Schmidt, Joao Edgar
Geshev, Julian Penkov
author_role author
author2 Pereira, Luis Gustavo
Schmidt, Joao Edgar
Geshev, Julian Penkov
author2_role author
author
author
dc.contributor.author.fl_str_mv Sossmeier, K.D.
Pereira, Luis Gustavo
Schmidt, Joao Edgar
Geshev, Julian Penkov
dc.subject.por.fl_str_mv Materiais ferromagnéticos
Materiais antiferromagnéticos
Materiais paramagnéticos
Campos magnéticos
Efeitos de feixe iônico
Esfriamento
Filmes finos magneticos
Polarização por intercâmbio
Ligas de níquel
Ligas de cobre
topic Materiais ferromagnéticos
Materiais antiferromagnéticos
Materiais paramagnéticos
Campos magnéticos
Efeitos de feixe iônico
Esfriamento
Filmes finos magneticos
Polarização por intercâmbio
Ligas de níquel
Ligas de cobre
description This paper reports experimental results obtained on an unconventional exchange bias (EB) system where the ferromagnetic layer, Ni0.75Cu0.25, has lower ordering temperature (TC) than that (TN) of the antiferromagnetic one, NiO, with emphasis on modifying EB through either magnetic annealing or light-ion irradiation. Samples were cooled from temperatures higher than TN or in between TC and TN to room temperature with magnetic field applied in different in-plane directions. Upon ion irradiation, magnetic fields, parallel or antiparallel to the orientation of the field present during the films deposition, were applied to explore different effects on EB. We found that the EB direction can be completely reversed by means of either annealing or ion bombardment; however, both postdeposition treatments provide very little variation of the EB field value over that produced during the film’s growth. The importance of the annealing field strength was also discussed. The results were interpreted based on a mechanism which assumes that the interfacial moments adjacent to the antiferromagnetic layer are responsible for establishing the exchange biasing in the paramagnetic state.
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dc.identifier.nrb.pt_BR.fl_str_mv 000820510
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dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv Journal of applied physics. Vol. 109, no. 8 (Apr. 2011), 083938, 5 p.
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