Bias dependence of magnetoresistance in Fe-Al/sub 2/O/sub 3/ granular thin films

• Autor(a) principal: Boff, Marco Aurelio Silveira
• Data de Publicação: 2002
• Outros Autores: Geshev, Julian Penkov, Schmidt, Joao Edgar, Flores, Wladimir Hernandez, Antunes, Arlei Borba, Gusmao, Miguel Angelo Cavalheiro, Teixeira, Sergio Ribeiro
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/95820
• topic: Alumina; Filmes finos metálicos descontinuos; Resistividade elétrica; Materiais ferromagnéticos; Ferro; Filmes finos magneticos; Magnetorresistência; Tunelamento eletrônico

This paper reports on the magnetotransport behavior of Fe–Al2O3 granular thin films when the injected dc current is varied. The electric resistance as a function of temperature, magnetoresistance, and the current vs applied bias potential measurements were used to characterize the samples. It was found that the transport mechanism which best describes the electronic properties of these samples is variable range hopping. Non-Ohmic behavior was observed and is claimed as responsible for the great modification of the electronic characteristics of the system as a function of the applied bias potential. Inversion of the tunneling magnetoresistance is observed for applied bias potential greater than 3 V. Such inverted magnetoresistance comes from the activation of low resistivity tunneling paths that are promoted by increasing the bias potential. An expression is proposed to describe the magnetoresistance behavior.