SiO2/SiC structures annealed in D2 18O : compositional and electrical effects
Autor(a) principal: | |
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Data de Publicação: | 2014 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/96550 |
Resumo: | Effects of water vapor annealing on SiO2/4H-SiC structures formed following different routes were investigated using water isotopically enriched in 18O and 2H (D). Isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on 4H-SiC was observed in the whole depth of the films, differently from the behavior of SiO2 films thermally grown on 4H-SiC. The highest amount of D was obtained in the sample with the highest negative fixed charge concentration, suggesting that the D incorporation occurs in defects in the structure that exist prior to the annealing. As a consequence of the water annealing, a significant reduction in the negative effective charge in metal-oxide-semiconductor capacitors and the removal of the SiO2/SiC interfacial region was observed, attributed to the reduction of the amount of SiOxCy compounds in the interfacial region. |
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Pitthan Filho, EduardoCorrêa, Silma AlbertonBoudinov, Henri IvanovStedile, Fernanda Chiarello2014-06-13T02:07:20Z20140003-6951http://hdl.handle.net/10183/96550000915393Effects of water vapor annealing on SiO2/4H-SiC structures formed following different routes were investigated using water isotopically enriched in 18O and 2H (D). Isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on 4H-SiC was observed in the whole depth of the films, differently from the behavior of SiO2 films thermally grown on 4H-SiC. The highest amount of D was obtained in the sample with the highest negative fixed charge concentration, suggesting that the D incorporation occurs in defects in the structure that exist prior to the annealing. As a consequence of the water annealing, a significant reduction in the negative effective charge in metal-oxide-semiconductor capacitors and the removal of the SiO2/SiC interfacial region was observed, attributed to the reduction of the amount of SiOxCy compounds in the interfacial region.application/pdfengApplied physics letters. New York. Vol. 104, no. 11 (Mar. 2014), 4 p.Carbeto de silícioDióxido de silícioSiO2/SiC structures annealed in D2 18O : compositional and electrical effectsEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000915393.pdf000915393.pdfTexto completo (inglês)application/pdf824317http://www.lume.ufrgs.br/bitstream/10183/96550/1/000915393.pdf4ebc257b332163e12adee844f5017ce4MD51TEXT000915393.pdf.txt000915393.pdf.txtExtracted Texttext/plain22902http://www.lume.ufrgs.br/bitstream/10183/96550/2/000915393.pdf.txtf1b4a9e200dfacb14d03455d04b0cadfMD52THUMBNAIL000915393.pdf.jpg000915393.pdf.jpgGenerated Thumbnailimage/jpeg1845http://www.lume.ufrgs.br/bitstream/10183/96550/3/000915393.pdf.jpg08a6e9ee6afd440ef67e07bf0192bf8aMD5310183/965502018-10-18 08:12:36.162oai:www.lume.ufrgs.br:10183/96550Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2018-10-18T11:12:36Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
SiO2/SiC structures annealed in D2 18O : compositional and electrical effects |
title |
SiO2/SiC structures annealed in D2 18O : compositional and electrical effects |
spellingShingle |
SiO2/SiC structures annealed in D2 18O : compositional and electrical effects Pitthan Filho, Eduardo Carbeto de silício Dióxido de silício |
title_short |
SiO2/SiC structures annealed in D2 18O : compositional and electrical effects |
title_full |
SiO2/SiC structures annealed in D2 18O : compositional and electrical effects |
title_fullStr |
SiO2/SiC structures annealed in D2 18O : compositional and electrical effects |
title_full_unstemmed |
SiO2/SiC structures annealed in D2 18O : compositional and electrical effects |
title_sort |
SiO2/SiC structures annealed in D2 18O : compositional and electrical effects |
author |
Pitthan Filho, Eduardo |
author_facet |
Pitthan Filho, Eduardo Corrêa, Silma Alberton Boudinov, Henri Ivanov Stedile, Fernanda Chiarello |
author_role |
author |
author2 |
Corrêa, Silma Alberton Boudinov, Henri Ivanov Stedile, Fernanda Chiarello |
author2_role |
author author author |
dc.contributor.author.fl_str_mv |
Pitthan Filho, Eduardo Corrêa, Silma Alberton Boudinov, Henri Ivanov Stedile, Fernanda Chiarello |
dc.subject.por.fl_str_mv |
Carbeto de silício Dióxido de silício |
topic |
Carbeto de silício Dióxido de silício |
description |
Effects of water vapor annealing on SiO2/4H-SiC structures formed following different routes were investigated using water isotopically enriched in 18O and 2H (D). Isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on 4H-SiC was observed in the whole depth of the films, differently from the behavior of SiO2 films thermally grown on 4H-SiC. The highest amount of D was obtained in the sample with the highest negative fixed charge concentration, suggesting that the D incorporation occurs in defects in the structure that exist prior to the annealing. As a consequence of the water annealing, a significant reduction in the negative effective charge in metal-oxide-semiconductor capacitors and the removal of the SiO2/SiC interfacial region was observed, attributed to the reduction of the amount of SiOxCy compounds in the interfacial region. |
publishDate |
2014 |
dc.date.accessioned.fl_str_mv |
2014-06-13T02:07:20Z |
dc.date.issued.fl_str_mv |
2014 |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10183/96550 |
dc.identifier.issn.pt_BR.fl_str_mv |
0003-6951 |
dc.identifier.nrb.pt_BR.fl_str_mv |
000915393 |
identifier_str_mv |
0003-6951 000915393 |
url |
http://hdl.handle.net/10183/96550 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Applied physics letters. New York. Vol. 104, no. 11 (Mar. 2014), 4 p. |
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openAccess |
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