SiO2/SiC structures annealed in D2 18O : compositional and electrical effects

Detalhes bibliográficos
Autor(a) principal: Pitthan Filho, Eduardo
Data de Publicação: 2014
Outros Autores: Corrêa, Silma Alberton, Boudinov, Henri Ivanov, Stedile, Fernanda Chiarello
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/96550
Resumo: Effects of water vapor annealing on SiO2/4H-SiC structures formed following different routes were investigated using water isotopically enriched in 18O and 2H (D). Isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on 4H-SiC was observed in the whole depth of the films, differently from the behavior of SiO2 films thermally grown on 4H-SiC. The highest amount of D was obtained in the sample with the highest negative fixed charge concentration, suggesting that the D incorporation occurs in defects in the structure that exist prior to the annealing. As a consequence of the water annealing, a significant reduction in the negative effective charge in metal-oxide-semiconductor capacitors and the removal of the SiO2/SiC interfacial region was observed, attributed to the reduction of the amount of SiOxCy compounds in the interfacial region.
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spelling Pitthan Filho, EduardoCorrêa, Silma AlbertonBoudinov, Henri IvanovStedile, Fernanda Chiarello2014-06-13T02:07:20Z20140003-6951http://hdl.handle.net/10183/96550000915393Effects of water vapor annealing on SiO2/4H-SiC structures formed following different routes were investigated using water isotopically enriched in 18O and 2H (D). Isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on 4H-SiC was observed in the whole depth of the films, differently from the behavior of SiO2 films thermally grown on 4H-SiC. The highest amount of D was obtained in the sample with the highest negative fixed charge concentration, suggesting that the D incorporation occurs in defects in the structure that exist prior to the annealing. As a consequence of the water annealing, a significant reduction in the negative effective charge in metal-oxide-semiconductor capacitors and the removal of the SiO2/SiC interfacial region was observed, attributed to the reduction of the amount of SiOxCy compounds in the interfacial region.application/pdfengApplied physics letters. New York. Vol. 104, no. 11 (Mar. 2014), 4 p.Carbeto de silícioDióxido de silícioSiO2/SiC structures annealed in D2 18O : compositional and electrical effectsEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000915393.pdf000915393.pdfTexto completo (inglês)application/pdf824317http://www.lume.ufrgs.br/bitstream/10183/96550/1/000915393.pdf4ebc257b332163e12adee844f5017ce4MD51TEXT000915393.pdf.txt000915393.pdf.txtExtracted Texttext/plain22902http://www.lume.ufrgs.br/bitstream/10183/96550/2/000915393.pdf.txtf1b4a9e200dfacb14d03455d04b0cadfMD52THUMBNAIL000915393.pdf.jpg000915393.pdf.jpgGenerated Thumbnailimage/jpeg1845http://www.lume.ufrgs.br/bitstream/10183/96550/3/000915393.pdf.jpg08a6e9ee6afd440ef67e07bf0192bf8aMD5310183/965502018-10-18 08:12:36.162oai:www.lume.ufrgs.br:10183/96550Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2018-10-18T11:12:36Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv SiO2/SiC structures annealed in D2 18O : compositional and electrical effects
title SiO2/SiC structures annealed in D2 18O : compositional and electrical effects
spellingShingle SiO2/SiC structures annealed in D2 18O : compositional and electrical effects
Pitthan Filho, Eduardo
Carbeto de silício
Dióxido de silício
title_short SiO2/SiC structures annealed in D2 18O : compositional and electrical effects
title_full SiO2/SiC structures annealed in D2 18O : compositional and electrical effects
title_fullStr SiO2/SiC structures annealed in D2 18O : compositional and electrical effects
title_full_unstemmed SiO2/SiC structures annealed in D2 18O : compositional and electrical effects
title_sort SiO2/SiC structures annealed in D2 18O : compositional and electrical effects
author Pitthan Filho, Eduardo
author_facet Pitthan Filho, Eduardo
Corrêa, Silma Alberton
Boudinov, Henri Ivanov
Stedile, Fernanda Chiarello
author_role author
author2 Corrêa, Silma Alberton
Boudinov, Henri Ivanov
Stedile, Fernanda Chiarello
author2_role author
author
author
dc.contributor.author.fl_str_mv Pitthan Filho, Eduardo
Corrêa, Silma Alberton
Boudinov, Henri Ivanov
Stedile, Fernanda Chiarello
dc.subject.por.fl_str_mv Carbeto de silício
Dióxido de silício
topic Carbeto de silício
Dióxido de silício
description Effects of water vapor annealing on SiO2/4H-SiC structures formed following different routes were investigated using water isotopically enriched in 18O and 2H (D). Isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on 4H-SiC was observed in the whole depth of the films, differently from the behavior of SiO2 films thermally grown on 4H-SiC. The highest amount of D was obtained in the sample with the highest negative fixed charge concentration, suggesting that the D incorporation occurs in defects in the structure that exist prior to the annealing. As a consequence of the water annealing, a significant reduction in the negative effective charge in metal-oxide-semiconductor capacitors and the removal of the SiO2/SiC interfacial region was observed, attributed to the reduction of the amount of SiOxCy compounds in the interfacial region.
publishDate 2014
dc.date.accessioned.fl_str_mv 2014-06-13T02:07:20Z
dc.date.issued.fl_str_mv 2014
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/96550
dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
dc.identifier.nrb.pt_BR.fl_str_mv 000915393
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dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv Applied physics letters. New York. Vol. 104, no. 11 (Mar. 2014), 4 p.
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