Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon

Detalhes bibliográficos
Autor(a) principal: Frank, Martin M.
Data de Publicação: 2003
Outros Autores: Chabal, Yves Jean, Green, Martin L., Delabie, Annelies, Brijs, Bert, Wilk, Glen D., Ho, Mun-Yee, Rosa, Elisa Brod Oliveira da, Baumvol, Israel Jacob Rabin, Stedile, Fernanda Chiarello
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/141213
Resumo: A route is presented for activation of hydrogen-terminated Si(100) prior to atomic layer deposition. It is based on our discovery from in situ infrared spectroscopy that organometallic precursors can effectively initiate oxide growth. Narrow nuclear resonance profiling and Rutherford backscattering spectrometry show that surface functionalization by pre-exposure to 108 Langmuir trimethylaluminum at 300 °C leads to enhanced nucleation and to nearly linear growth kinetics of the high-permittivity gate dielectrics aluminum oxide and hafnium oxide.
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spelling Frank, Martin M.Chabal, Yves JeanGreen, Martin L.Delabie, AnneliesBrijs, BertWilk, Glen D.Ho, Mun-YeeRosa, Elisa Brod Oliveira daBaumvol, Israel Jacob RabinStedile, Fernanda Chiarello2016-05-17T02:07:24Z20030003-6951http://hdl.handle.net/10183/141213000376604A route is presented for activation of hydrogen-terminated Si(100) prior to atomic layer deposition. It is based on our discovery from in situ infrared spectroscopy that organometallic precursors can effectively initiate oxide growth. Narrow nuclear resonance profiling and Rutherford backscattering spectrometry show that surface functionalization by pre-exposure to 108 Langmuir trimethylaluminum at 300 °C leads to enhanced nucleation and to nearly linear growth kinetics of the high-permittivity gate dielectrics aluminum oxide and hafnium oxide.application/pdfengApplied physics letters. Melville. Vol. 83, no. 4 (July 2003), p. 740-742Físico-químicaEnhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated siliconEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000376604.pdf000376604.pdfTexto completo (inglês)application/pdf543812http://www.lume.ufrgs.br/bitstream/10183/141213/1/000376604.pdfbebf8ac6656788dcf2a5a1052aa5f843MD51TEXT000376604.pdf.txt000376604.pdf.txtExtracted Texttext/plain19075http://www.lume.ufrgs.br/bitstream/10183/141213/2/000376604.pdf.txt83ade94a6b82b4bd1dc5f9d9cddf2e64MD52THUMBNAIL000376604.pdf.jpg000376604.pdf.jpgGenerated Thumbnailimage/jpeg2304http://www.lume.ufrgs.br/bitstream/10183/141213/3/000376604.pdf.jpg93b73e93736a2f94a248520ba92c56c8MD5310183/1412132020-01-16 05:09:24.165007oai:www.lume.ufrgs.br:10183/141213Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2020-01-16T07:09:24Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon
title Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon
spellingShingle Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon
Frank, Martin M.
Físico-química
title_short Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon
title_full Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon
title_fullStr Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon
title_full_unstemmed Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon
title_sort Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon
author Frank, Martin M.
author_facet Frank, Martin M.
Chabal, Yves Jean
Green, Martin L.
Delabie, Annelies
Brijs, Bert
Wilk, Glen D.
Ho, Mun-Yee
Rosa, Elisa Brod Oliveira da
Baumvol, Israel Jacob Rabin
Stedile, Fernanda Chiarello
author_role author
author2 Chabal, Yves Jean
Green, Martin L.
Delabie, Annelies
Brijs, Bert
Wilk, Glen D.
Ho, Mun-Yee
Rosa, Elisa Brod Oliveira da
Baumvol, Israel Jacob Rabin
Stedile, Fernanda Chiarello
author2_role author
author
author
author
author
author
author
author
author
dc.contributor.author.fl_str_mv Frank, Martin M.
Chabal, Yves Jean
Green, Martin L.
Delabie, Annelies
Brijs, Bert
Wilk, Glen D.
Ho, Mun-Yee
Rosa, Elisa Brod Oliveira da
Baumvol, Israel Jacob Rabin
Stedile, Fernanda Chiarello
dc.subject.por.fl_str_mv Físico-química
topic Físico-química
description A route is presented for activation of hydrogen-terminated Si(100) prior to atomic layer deposition. It is based on our discovery from in situ infrared spectroscopy that organometallic precursors can effectively initiate oxide growth. Narrow nuclear resonance profiling and Rutherford backscattering spectrometry show that surface functionalization by pre-exposure to 108 Langmuir trimethylaluminum at 300 °C leads to enhanced nucleation and to nearly linear growth kinetics of the high-permittivity gate dielectrics aluminum oxide and hafnium oxide.
publishDate 2003
dc.date.issued.fl_str_mv 2003
dc.date.accessioned.fl_str_mv 2016-05-17T02:07:24Z
dc.type.driver.fl_str_mv Estrangeiro
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dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/141213
dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
dc.identifier.nrb.pt_BR.fl_str_mv 000376604
identifier_str_mv 0003-6951
000376604
url http://hdl.handle.net/10183/141213
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Applied physics letters. Melville. Vol. 83, no. 4 (July 2003), p. 740-742
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