Electronic Stopping Power of /Sup 10/B in Si in Random and <100> Channeling Directions

• Autor(a) principal: Santos, Jose Henrique Rodrigues dos
• Data de Publicação: 1997
• Outros Autores: Behar, Moni, Grande, Pedro Luis, Boudinov, Henri Ivanov, Stoll, Rainer, Klatt, Christopher, Kalbitzer, Siegfried
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/104222
• topic: Física da matéria condensada; Íons

We report measurements of 10B stopping powers in random and Si (100) directions. The measurements were carried out in the 500–9000 keV energy range for the channeling case and in the 300–800 keV for the random one. For the channeling measurements, the low energy data (500–800 keV) follow a vs regime with s50.906 0.06 whereas, for the random data, dE/dxαv5 with s=1.1±0.2. Both results are in good agreement with the prediction of current theories. On the other side, the experimental random 10B stopping power values (for energies up to 650 keV) are in fair agreement with the ones obtained from a scaling procedure by Ziegler, Biersack, and Littmark. However, for energies higher than 650 keV, slight but systematic differences are observed.