Strain-inducing photochemical chlorination of graphene nanoribbons on SiC (0001)

Detalhes bibliográficos
Autor(a) principal: Copetti, Gabriela
Data de Publicação: 2021
Outros Autores: Nunes, Eduardo Horbach, Feijó, Tais Orestes, Galves, Lauren Aranha, Heilmann, Martin, Soares, Gabriel Vieira, Lopes, J. M. J., Radtke, Claudio
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/219698
Resumo: As different low-dimensional materials are sought to be incorporated into microelectronic devices, graphene integration is dependent on the development of band gap opening strategies. Amidst the different methods currently investigated, application of strain and use of electronic quantum confinement have shown promising results. In the present work, epitaxial graphene nanoribbons (GNR), formed by surface graphitization of SiC (0001) on crystalline step edges, were submitted to photochemical chlorination. The incorporation of Cl into the buffer layer underlying graphene increased the compressive uniaxial strain in the ribbons. Such method is a promising tool for tuning the band gap of GNRs.
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spelling Copetti, GabrielaNunes, Eduardo HorbachFeijó, Tais OrestesGalves, Lauren AranhaHeilmann, MartinSoares, Gabriel VieiraLopes, J. M. J.Radtke, Claudio2021-04-09T04:24:48Z20210957-4484http://hdl.handle.net/10183/219698001124020As different low-dimensional materials are sought to be incorporated into microelectronic devices, graphene integration is dependent on the development of band gap opening strategies. Amidst the different methods currently investigated, application of strain and use of electronic quantum confinement have shown promising results. In the present work, epitaxial graphene nanoribbons (GNR), formed by surface graphitization of SiC (0001) on crystalline step edges, were submitted to photochemical chlorination. The incorporation of Cl into the buffer layer underlying graphene increased the compressive uniaxial strain in the ribbons. Such method is a promising tool for tuning the band gap of GNRs.application/pdfengNanotechnology. Bristol. Vol. 32, no. 14 (Apr. 2021), 145707, 6 p.GrafenoCloração fotoquímicaNanofitasGrapheneNanoribbonsSiCStrainChlorineXPSRamanStrain-inducing photochemical chlorination of graphene nanoribbons on SiC (0001)Estrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSTEXT001124020.pdf.txt001124020.pdf.txtExtracted Texttext/plain24124http://www.lume.ufrgs.br/bitstream/10183/219698/2/001124020.pdf.txt270ca4f27fbee33e2114c3ee093a51c9MD52ORIGINAL001124020.pdfTexto completo (inglês)application/pdf1366693http://www.lume.ufrgs.br/bitstream/10183/219698/1/001124020.pdf3256dfac99067cd5dbb938007e2e3e0aMD5110183/2196982021-05-07 04:52:15.134957oai:www.lume.ufrgs.br:10183/219698Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2021-05-07T07:52:15Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Strain-inducing photochemical chlorination of graphene nanoribbons on SiC (0001)
title Strain-inducing photochemical chlorination of graphene nanoribbons on SiC (0001)
spellingShingle Strain-inducing photochemical chlorination of graphene nanoribbons on SiC (0001)
Copetti, Gabriela
Grafeno
Cloração fotoquímica
Nanofitas
Graphene
Nanoribbons
SiC
Strain
Chlorine
XPS
Raman
title_short Strain-inducing photochemical chlorination of graphene nanoribbons on SiC (0001)
title_full Strain-inducing photochemical chlorination of graphene nanoribbons on SiC (0001)
title_fullStr Strain-inducing photochemical chlorination of graphene nanoribbons on SiC (0001)
title_full_unstemmed Strain-inducing photochemical chlorination of graphene nanoribbons on SiC (0001)
title_sort Strain-inducing photochemical chlorination of graphene nanoribbons on SiC (0001)
author Copetti, Gabriela
author_facet Copetti, Gabriela
Nunes, Eduardo Horbach
Feijó, Tais Orestes
Galves, Lauren Aranha
Heilmann, Martin
Soares, Gabriel Vieira
Lopes, J. M. J.
Radtke, Claudio
author_role author
author2 Nunes, Eduardo Horbach
Feijó, Tais Orestes
Galves, Lauren Aranha
Heilmann, Martin
Soares, Gabriel Vieira
Lopes, J. M. J.
Radtke, Claudio
author2_role author
author
author
author
author
author
author
dc.contributor.author.fl_str_mv Copetti, Gabriela
Nunes, Eduardo Horbach
Feijó, Tais Orestes
Galves, Lauren Aranha
Heilmann, Martin
Soares, Gabriel Vieira
Lopes, J. M. J.
Radtke, Claudio
dc.subject.por.fl_str_mv Grafeno
Cloração fotoquímica
Nanofitas
topic Grafeno
Cloração fotoquímica
Nanofitas
Graphene
Nanoribbons
SiC
Strain
Chlorine
XPS
Raman
dc.subject.eng.fl_str_mv Graphene
Nanoribbons
SiC
Strain
Chlorine
XPS
Raman
description As different low-dimensional materials are sought to be incorporated into microelectronic devices, graphene integration is dependent on the development of band gap opening strategies. Amidst the different methods currently investigated, application of strain and use of electronic quantum confinement have shown promising results. In the present work, epitaxial graphene nanoribbons (GNR), formed by surface graphitization of SiC (0001) on crystalline step edges, were submitted to photochemical chlorination. The incorporation of Cl into the buffer layer underlying graphene increased the compressive uniaxial strain in the ribbons. Such method is a promising tool for tuning the band gap of GNRs.
publishDate 2021
dc.date.accessioned.fl_str_mv 2021-04-09T04:24:48Z
dc.date.issued.fl_str_mv 2021
dc.type.driver.fl_str_mv Estrangeiro
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/219698
dc.identifier.issn.pt_BR.fl_str_mv 0957-4484
dc.identifier.nrb.pt_BR.fl_str_mv 001124020
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url http://hdl.handle.net/10183/219698
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Nanotechnology. Bristol. Vol. 32, no. 14 (Apr. 2021), 145707, 6 p.
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