GeO2/Ge structure submitted to annealing in deuterium : incorporation pathways and associated oxide modifications

Detalhes bibliográficos
Autor(a) principal: Bom, Nicolau Molina
Data de Publicação: 2014
Outros Autores: Soares, Gabriel Vieira, Hartmann, Samuel, Bordin, Anderson, Radtke, Claudio
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/142396
Resumo: Deuterium (D) incorporation in GeO2/Ge structures following D2 annealing was investigated. Higher D concentrations were obtained for GeO2/Ge samples in comparison to their SiO2/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D2 constitute defect sites for D incorporation, analogous to defects at the SiO2/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D2 annealing, especially in the high temperature regime of the present study (>450 C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/ Ge structures with respect to SiO2/Si counterparts.
id UFRGS-2_be3490fc309609daff5ab91ebfa0239f
oai_identifier_str oai:www.lume.ufrgs.br:10183/142396
network_acronym_str UFRGS-2
network_name_str Repositório Institucional da UFRGS
repository_id_str
spelling Bom, Nicolau MolinaSoares, Gabriel VieiraHartmann, SamuelBordin, AndersonRadtke, Claudio2016-06-09T02:08:36Z20140003-6951http://hdl.handle.net/10183/142396000944139Deuterium (D) incorporation in GeO2/Ge structures following D2 annealing was investigated. Higher D concentrations were obtained for GeO2/Ge samples in comparison to their SiO2/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D2 constitute defect sites for D incorporation, analogous to defects at the SiO2/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D2 annealing, especially in the high temperature regime of the present study (>450 C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/ Ge structures with respect to SiO2/Si counterparts.application/pdfengApplied physics letters. New York. Vol. 105, no. 14 (Oct. 2014), 141605, 4 p.Semicondutores elementaresEstrutura químicaDopagem de semicondutoresEstequiometriaDeuterioGermânioGeO2/Ge structure submitted to annealing in deuterium : incorporation pathways and associated oxide modificationsEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000944139.pdf000944139.pdfTexto completo (inglês)application/pdf984487http://www.lume.ufrgs.br/bitstream/10183/142396/1/000944139.pdfdb91868c685dda48e14786ed3fbc4339MD51TEXT000944139.pdf.txt000944139.pdf.txtExtracted Texttext/plain24675http://www.lume.ufrgs.br/bitstream/10183/142396/2/000944139.pdf.txt26e1a0d7f86a5129d5abbb160366bcabMD52THUMBNAIL000944139.pdf.jpg000944139.pdf.jpgGenerated Thumbnailimage/jpeg2145http://www.lume.ufrgs.br/bitstream/10183/142396/3/000944139.pdf.jpg595b61c55be4a07cf71ded50de662730MD5310183/1423962021-09-18 04:40:59.407233oai:www.lume.ufrgs.br:10183/142396Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2021-09-18T07:40:59Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv GeO2/Ge structure submitted to annealing in deuterium : incorporation pathways and associated oxide modifications
title GeO2/Ge structure submitted to annealing in deuterium : incorporation pathways and associated oxide modifications
spellingShingle GeO2/Ge structure submitted to annealing in deuterium : incorporation pathways and associated oxide modifications
Bom, Nicolau Molina
Semicondutores elementares
Estrutura química
Dopagem de semicondutores
Estequiometria
Deuterio
Germânio
title_short GeO2/Ge structure submitted to annealing in deuterium : incorporation pathways and associated oxide modifications
title_full GeO2/Ge structure submitted to annealing in deuterium : incorporation pathways and associated oxide modifications
title_fullStr GeO2/Ge structure submitted to annealing in deuterium : incorporation pathways and associated oxide modifications
title_full_unstemmed GeO2/Ge structure submitted to annealing in deuterium : incorporation pathways and associated oxide modifications
title_sort GeO2/Ge structure submitted to annealing in deuterium : incorporation pathways and associated oxide modifications
author Bom, Nicolau Molina
author_facet Bom, Nicolau Molina
Soares, Gabriel Vieira
Hartmann, Samuel
Bordin, Anderson
Radtke, Claudio
author_role author
author2 Soares, Gabriel Vieira
Hartmann, Samuel
Bordin, Anderson
Radtke, Claudio
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Bom, Nicolau Molina
Soares, Gabriel Vieira
Hartmann, Samuel
Bordin, Anderson
Radtke, Claudio
dc.subject.por.fl_str_mv Semicondutores elementares
Estrutura química
Dopagem de semicondutores
Estequiometria
Deuterio
Germânio
topic Semicondutores elementares
Estrutura química
Dopagem de semicondutores
Estequiometria
Deuterio
Germânio
description Deuterium (D) incorporation in GeO2/Ge structures following D2 annealing was investigated. Higher D concentrations were obtained for GeO2/Ge samples in comparison to their SiO2/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D2 constitute defect sites for D incorporation, analogous to defects at the SiO2/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D2 annealing, especially in the high temperature regime of the present study (>450 C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/ Ge structures with respect to SiO2/Si counterparts.
publishDate 2014
dc.date.issued.fl_str_mv 2014
dc.date.accessioned.fl_str_mv 2016-06-09T02:08:36Z
dc.type.driver.fl_str_mv Estrangeiro
info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/142396
dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
dc.identifier.nrb.pt_BR.fl_str_mv 000944139
identifier_str_mv 0003-6951
000944139
url http://hdl.handle.net/10183/142396
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Applied physics letters. New York. Vol. 105, no. 14 (Oct. 2014), 141605, 4 p.
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFRGS
instname:Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
instname_str Universidade Federal do Rio Grande do Sul (UFRGS)
instacron_str UFRGS
institution UFRGS
reponame_str Repositório Institucional da UFRGS
collection Repositório Institucional da UFRGS
bitstream.url.fl_str_mv http://www.lume.ufrgs.br/bitstream/10183/142396/1/000944139.pdf
http://www.lume.ufrgs.br/bitstream/10183/142396/2/000944139.pdf.txt
http://www.lume.ufrgs.br/bitstream/10183/142396/3/000944139.pdf.jpg
bitstream.checksum.fl_str_mv db91868c685dda48e14786ed3fbc4339
26e1a0d7f86a5129d5abbb160366bcab
595b61c55be4a07cf71ded50de662730
bitstream.checksumAlgorithm.fl_str_mv MD5
MD5
MD5
repository.name.fl_str_mv Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)
repository.mail.fl_str_mv
_version_ 1801224902968082432

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