Lift-off protocols for thin films for use in EXAFS experiments

• Autor(a) principal: Decoster, S.
• Data de Publicação: 2013
• Outros Autores: Glover, C. J., Johannessen, B., Giulian, Raquel, Sprouster, David J., Kluth, Patrick, Araújo, Leandro Langie, Hussain, Zohair S., Schnohr, Claudia S., Salama, H., Kremer, Felipe, Temst, Kristiaan, Vantomme, A., Ridgway, M.C.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/94424
• topic: Filmes finos dieletricos; Filmes finos semicondutores; Semicondutores amorfos; Crescimento de semicondutores; Estrutura fina estendida de absorção de raios x (EXAFS); Arseneto de galio; Compostos de indio; Compostos de silício; Thin film; Lift-off; Semiconductor; Dielectric

Lift-off protocols for thin films for improved extended X-ray absorption fine structure (EXAFS) measurements are presented. Using wet chemical etching of the substrate or the interlayer between the thin film and the substrate, standalone high-quality micrometer-thin films are obtained. Protocols for the singlecrystalline semiconductors GeSi, InGaAs, InGaP, InP and GaAs, the amorphous semiconductors GaAs, GeSi and InP and the dielectric materials SiO2 and Si3N4 are presented. The removal of the substrate and the ability to stack the thin films yield benefits for EXAFS experiments in transmission as well as in fluorescence mode. Several cases are presented where this improved sample preparation procedure results in higher-quality EXAFS data compared with conventional sample preparation methods. This lift-off procedure can also be advantageous for other experimental techniques (e.g. small-angle X-ray scattering) that benefit from removing undesired contributions from the substrate.