Magnetoresistance in rf-sputtered(nife/cu/co/cu) spin-valve multilayers

• Autor(a) principal: Lottis, Daniel Kurt
• Data de Publicação: 1993
• Outros Autores: Fert, Albert R., Morel, Robert, Pereira, Luis Gustavo, Jacquet, J.C., Galtier, P., Coutellier, J.M., Valet, Tierry
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/95415
• topic: Física da matéria condensada; Magnetorresistência; Implantação de íons

A study of the vtiation of the magnetoresistancein (Ni80Fe20/Cu/Co/Cu) multilayers with the thicknesses tNiFe, tcO, and &;cu of each type of component layer has been performed. The magnetoresistance (MR), which at 4 .2 K is larger than 20% for many samples, has been measured for fields applied both parallel and perpendicular to the current. This allows a direct measurement of the anisotropic magnetorestistance as well as an estimate of the spin-valve contribution to the total MR. The dependence of the MR on tcu indicates the presence of an oscillatory interlayer exchange c.oupling through the Cu layers with a period of about 12 Å. The dependence of the MR on tNiFe and tcO was studied at tcu=50 Å, for which the coupling is negligible. In this limit, the variation of the MR is dominated by the thickness dependenceo f the NiFe and Co component layer coercivitie-s, which determine the degree of antiparallel alignement obtained during magnetization reversal.