Interdependence between training and magnetization reversal in granular Co-CoO exchange bias systems

• Autor(a) principal: Menéndez Dalmau, Enric
• Data de Publicação: 2014
• Outros Autores: Dias, Thiago, Geshev, Julian Penkov, López-Barberá Martín, José Francisco, Nogués Sanmiquel, Josep, Steitz, Roland, Kirby, Brian J., Borchers, Julie A., Pereira, Lino Miguel da Costa, Vantomme, A., Temst, Kristiaan
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/104580
• topic: Materiais granulares; Implantacao ionica; Filmes finos magneticos; Nucleação; Paredes de domínios magnéticos; Reversão de magnetização; Compostos de cobalto

The interdependence between training and magnetization reversal in granular Co-CoO exchange bias (EB) systems prepared byOion implantation inCo thin films is demonstrated by polarized neutron reflectometry. While high-fluence O-implanted thin films show reduced relative training values and no asymmetry in magnetization reversal (all reversals take place by domain wall nucleation and motion), low-fluence O ion implantation results in an increased relative training and a magnetization reversal asymmetry between the first descending and the first ascending branches. Whereas the untrained decreasing field reversal occurs mainly by domain wall nucleation and motion, traces of a domain rotation contribution are evidenced in the increasing field reversal. This is explained by the evolution of the CoO structure and the contribution of the out-of-plane magnetization with ion implantation. The amount of incorporated O, which determines the threshold between both behaviors, is around 20 at.%. This reveals that the interdependence between training and magnetization reversal is insensitive to the morphology of the constituents (i.e., granular or layered), indicating that this is an intrinsic EB effect, which can be conveniently tailored by the interplay between the intrinsic properties of the investigated materials and ion implantation.