Large resistivity change and phase transition in the antiferromagnetic semiconductors LiMnAs and LaOMnAs

• Autor(a) principal: Beleanu, Andreea
• Data de Publicação: 2013
• Outros Autores: Kiss, Janos, Kreiner, Guido, Köhler, Christian, Müchler, Lukas, Schnelle, Walter, Burkhardt, Ulrich, Chadov, Stanislav, Medvediev, Sergiy, Ebke, Daniel, Felser, Claudia, Cordier, Gerhard, Albert, Barbara, Hoser, Andreas, Bernardi, Fabiano, Larkin, Timofei I., Pröpper, Daniel, Boris, Alexander V., Keimer, Bernhard
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/104568
• topic: Semicondutores; Difração de nêutrons; Materiais magnéticos

Antiferromagnetic semiconductors are new alternative materials for spintronic applications and spin valves. In this work, we report a detailed investigation of two antiferromagnetic semiconductors AMnAs (A = Li, LaO), which are isostructural to the well-known LiFeAs and LaOFeAs superconductors. Here we present a comparison between the structural, magnetic, and electronic properties of LiMnAs, LaOMnAs, and related materials. Interestingly, both LiMnAs and LaOMnAs show a variation in resistivity with more than five orders of magnitude, making them particularly suitable for use in future electronic devices. Neutron and x-ray diffraction measurements on LiMnAs show a magnetic phase transition corresponding to the N´eel temperature of 373.8 K, and a structural transition from the tetragonal to the cubic phase at 768 K. These experimental results are supported by density functional theory calculations.