MOSFET ZTC condition analysis for a self-biased current reference design

• Autor(a) principal: Toledo, Pedro Filipe Leite Correia de
• Data de Publicação: 2015
• Outros Autores: Klimach, Hamilton Duarte, Cordova Vivas, David Javier, Bampi, Sergio, Fabris, Eric Ericson
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/259654
• topic: Mosfet; Semicondutores; Simulação numérica; Método de Monte Carlo; MOSFET ZTC condition; Current reference source; Low temperature coefficient

In this paper a self-biased current reference based on Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Zero Temperature Coefficient (ZTC) condition is proposed. It can be imple mented in any Complementary Metal-Oxide-Semiconductor (CMOS) fabrication process and pro vides another alternative to design current references. In order to support the circuit design, ZTC condition is analyzed using a MOSFET model that is continuous from weak to strong inversion, show ing that this condition always occurs from moderate to strong inversion in any CMOS process. The proposed topology was designed in a 180 nm process, operates with a supply voltage from 1.4V to 1.8 V and occupies around 0.010mm2 of silicon area. From circuit simulations our reference showed a temperature coefficient (TC) of 15 ppm/o C from -40 to +85o C, and a fabrication process sensitivity of σ/μ = 4.5% for the current reference, including average process and local mismatch variability analysis. The simulated power supply sensitivity is estimated around 1%/V.