Ion beam synthesis of cubic FeSi2

Detalhes bibliográficos
Autor(a) principal: Desimoni, Judith
Data de Publicação: 1993
Outros Autores: Bernas, H., Behar, Moni, Lin, X.W., Washburn, J., Liliental-Weber, Zuzanna
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/140585
Resumo: Cubic FeSi, precipitates were synthesized in Si ( 100) by room-temperature Fe ion implantation followed by Si 500 keV ion beam induced epitaxial crystallization at 320 “C!. High resolution electron microscopy and Rutherford backscattering/channeling techniques show that the cubic precipitates occur in both aligned (A) and twinned (B) types with a lattice parameter very similar to that of the Si (100) matrix.
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spelling Desimoni, JudithBernas, H.Behar, MoniLin, X.W.Washburn, J.Liliental-Weber, Zuzanna2016-05-10T02:06:59Z19930003-6951http://hdl.handle.net/10183/140585000056178Cubic FeSi, precipitates were synthesized in Si ( 100) by room-temperature Fe ion implantation followed by Si 500 keV ion beam induced epitaxial crystallization at 320 “C!. High resolution electron microscopy and Rutherford backscattering/channeling techniques show that the cubic precipitates occur in both aligned (A) and twinned (B) types with a lattice parameter very similar to that of the Si (100) matrix.application/pdfengApplied physics letters. New York. Vol. 62, no. 3 (Jan. 1993), p. 306-308Física da matéria condensadaImplantação de íonsIon beam synthesis of cubic FeSi2Estrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000056178.pdf000056178.pdfTexto completo (inglês)application/pdf756233http://www.lume.ufrgs.br/bitstream/10183/140585/1/000056178.pdf4cf3b004f0c6b1b2c31fe94390016242MD51TEXT000056178.pdf.txt000056178.pdf.txtExtracted Texttext/plain10867http://www.lume.ufrgs.br/bitstream/10183/140585/2/000056178.pdf.txt09d9b23a2545e9c246d2865b041a76bdMD5210183/1405852022-02-22 05:13:24.541608oai:www.lume.ufrgs.br:10183/140585Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-02-22T08:13:24Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Ion beam synthesis of cubic FeSi2
title Ion beam synthesis of cubic FeSi2
spellingShingle Ion beam synthesis of cubic FeSi2
Desimoni, Judith
Física da matéria condensada
Implantação de íons
title_short Ion beam synthesis of cubic FeSi2
title_full Ion beam synthesis of cubic FeSi2
title_fullStr Ion beam synthesis of cubic FeSi2
title_full_unstemmed Ion beam synthesis of cubic FeSi2
title_sort Ion beam synthesis of cubic FeSi2
author Desimoni, Judith
author_facet Desimoni, Judith
Bernas, H.
Behar, Moni
Lin, X.W.
Washburn, J.
Liliental-Weber, Zuzanna
author_role author
author2 Bernas, H.
Behar, Moni
Lin, X.W.
Washburn, J.
Liliental-Weber, Zuzanna
author2_role author
author
author
author
author
dc.contributor.author.fl_str_mv Desimoni, Judith
Bernas, H.
Behar, Moni
Lin, X.W.
Washburn, J.
Liliental-Weber, Zuzanna
dc.subject.por.fl_str_mv Física da matéria condensada
Implantação de íons
topic Física da matéria condensada
Implantação de íons
description Cubic FeSi, precipitates were synthesized in Si ( 100) by room-temperature Fe ion implantation followed by Si 500 keV ion beam induced epitaxial crystallization at 320 “C!. High resolution electron microscopy and Rutherford backscattering/channeling techniques show that the cubic precipitates occur in both aligned (A) and twinned (B) types with a lattice parameter very similar to that of the Si (100) matrix.
publishDate 1993
dc.date.issued.fl_str_mv 1993
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dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv Applied physics letters. New York. Vol. 62, no. 3 (Jan. 1993), p. 306-308
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