Carrier dynamics in stacked InP/GaAs quantum dots

Detalhes bibliográficos
Autor(a) principal: Veloso, A.B.
Data de Publicação: 2007
Outros Autores: Nakaema, Marcelo Kiyoshi Kian, Godoy, Marcio P.F. de, Lopes, João Marcelo Jordão, Likawa, Fernando, Brasil, Maria José Santos Pompeu, Bortoleto, José Roberto Ribeiro, Cotta, Mônica Alonso, Fichtner, Paulo Fernando Papaleo, Mörschbächer, Marcio José, Madureira, J.R.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/141716
Resumo: We investigated two stacked layers of InP/GaAs type-II quantum dots by transmission electron microscopy and optical spectroscopy. The results reveal that InP quantum dots formed in two quantum dot layers are more uniform than those from a single layer structure. The thermal activation energies as well as the photoluminescence decays are rather independent of the separation between quantum dot layers and the presence of the second layer. The quantum dot optical emission persists for thermal activation energy larger than the calculated exciton binding energy. The photoluminescence decay is relatively fast for type-II alignment.
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spelling Veloso, A.B.Nakaema, Marcelo Kiyoshi KianGodoy, Marcio P.F. deLopes, João Marcelo JordãoLikawa, FernandoBrasil, Maria José Santos PompeuBortoleto, José Roberto RibeiroCotta, Mônica AlonsoFichtner, Paulo Fernando PapaleoMörschbächer, Marcio JoséMadureira, J.R.2016-05-24T02:10:51Z20070003-6951http://hdl.handle.net/10183/141716000616855We investigated two stacked layers of InP/GaAs type-II quantum dots by transmission electron microscopy and optical spectroscopy. The results reveal that InP quantum dots formed in two quantum dot layers are more uniform than those from a single layer structure. The thermal activation energies as well as the photoluminescence decays are rather independent of the separation between quantum dot layers and the presence of the second layer. The quantum dot optical emission persists for thermal activation energy larger than the calculated exciton binding energy. The photoluminescence decay is relatively fast for type-II alignment.application/pdfengApplied physics letters. Vol. 91, no. 12 (Sept. 2007), 121917, 3 p.Arseneto de galioFosfeto de índioPontos quânticosEspectrometria de emissão ópticaCarrier dynamics in stacked InP/GaAs quantum dotsEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000616855.pdf000616855.pdfTexto completo (inglês)application/pdf679510http://www.lume.ufrgs.br/bitstream/10183/141716/1/000616855.pdf4698677d66ca571c82c7b3076a8f8101MD51TEXT000616855.pdf.txt000616855.pdf.txtExtracted Texttext/plain17161http://www.lume.ufrgs.br/bitstream/10183/141716/2/000616855.pdf.txt52f515f49ab69e6f3d3f84731572452aMD52THUMBNAIL000616855.pdf.jpg000616855.pdf.jpgGenerated Thumbnailimage/jpeg2243http://www.lume.ufrgs.br/bitstream/10183/141716/3/000616855.pdf.jpgeeaab743fc4f14149467b404bcfd44f3MD5310183/1417162021-06-13 04:32:09.331309oai:www.lume.ufrgs.br:10183/141716Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2021-06-13T07:32:09Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Carrier dynamics in stacked InP/GaAs quantum dots
title Carrier dynamics in stacked InP/GaAs quantum dots
spellingShingle Carrier dynamics in stacked InP/GaAs quantum dots
Veloso, A.B.
Arseneto de galio
Fosfeto de índio
Pontos quânticos
Espectrometria de emissão óptica
title_short Carrier dynamics in stacked InP/GaAs quantum dots
title_full Carrier dynamics in stacked InP/GaAs quantum dots
title_fullStr Carrier dynamics in stacked InP/GaAs quantum dots
title_full_unstemmed Carrier dynamics in stacked InP/GaAs quantum dots
title_sort Carrier dynamics in stacked InP/GaAs quantum dots
author Veloso, A.B.
author_facet Veloso, A.B.
Nakaema, Marcelo Kiyoshi Kian
Godoy, Marcio P.F. de
Lopes, João Marcelo Jordão
Likawa, Fernando
Brasil, Maria José Santos Pompeu
Bortoleto, José Roberto Ribeiro
Cotta, Mônica Alonso
Fichtner, Paulo Fernando Papaleo
Mörschbächer, Marcio José
Madureira, J.R.
author_role author
author2 Nakaema, Marcelo Kiyoshi Kian
Godoy, Marcio P.F. de
Lopes, João Marcelo Jordão
Likawa, Fernando
Brasil, Maria José Santos Pompeu
Bortoleto, José Roberto Ribeiro
Cotta, Mônica Alonso
Fichtner, Paulo Fernando Papaleo
Mörschbächer, Marcio José
Madureira, J.R.
author2_role author
author
author
author
author
author
author
author
author
author
dc.contributor.author.fl_str_mv Veloso, A.B.
Nakaema, Marcelo Kiyoshi Kian
Godoy, Marcio P.F. de
Lopes, João Marcelo Jordão
Likawa, Fernando
Brasil, Maria José Santos Pompeu
Bortoleto, José Roberto Ribeiro
Cotta, Mônica Alonso
Fichtner, Paulo Fernando Papaleo
Mörschbächer, Marcio José
Madureira, J.R.
dc.subject.por.fl_str_mv Arseneto de galio
Fosfeto de índio
Pontos quânticos
Espectrometria de emissão óptica
topic Arseneto de galio
Fosfeto de índio
Pontos quânticos
Espectrometria de emissão óptica
description We investigated two stacked layers of InP/GaAs type-II quantum dots by transmission electron microscopy and optical spectroscopy. The results reveal that InP quantum dots formed in two quantum dot layers are more uniform than those from a single layer structure. The thermal activation energies as well as the photoluminescence decays are rather independent of the separation between quantum dot layers and the presence of the second layer. The quantum dot optical emission persists for thermal activation energy larger than the calculated exciton binding energy. The photoluminescence decay is relatively fast for type-II alignment.
publishDate 2007
dc.date.issued.fl_str_mv 2007
dc.date.accessioned.fl_str_mv 2016-05-24T02:10:51Z
dc.type.driver.fl_str_mv Estrangeiro
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/141716
dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
dc.identifier.nrb.pt_BR.fl_str_mv 000616855
identifier_str_mv 0003-6951
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url http://hdl.handle.net/10183/141716
dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv Applied physics letters. Vol. 91, no. 12 (Sept. 2007), 121917, 3 p.
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