Modelling the raman spectrum of the amorphous- crystal Si system

Detalhes bibliográficos
Autor(a) principal: Carriço, Artur da Silva
Data de Publicação: 1986
Outros Autores: Barrio, R. A., Elliot, R. J.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRN
Texto Completo: https://repositorio.ufrn.br/jspui/handle/123456789/28673
https://doi.org/10.1088/0022-3719/19/8/010
Resumo: A model to calculate the Raman response of small Si crystallites immersed in an amorphous Si matrix is developed. The structure of the system is modelled by an infinite crystalline slab of varying width, in which the atoms on the (111) surfaces on both sides of the slab are attached to Bethe lattices. The Raman response is obtained from a simple polarisability model using the Green function technique. The results are compared with recent experiments. The model can be used for Si crystallites with free and hydrogenated (111) surfaces.
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spelling Carriço, Artur da SilvaBarrio, R. A.Elliot, R. J.2020-03-26T19:33:48Z2020-03-26T19:33:48Z1986ELLIOT, R J; BARRIO, R. A.; CARRIÇO, Artur da Silva. Modelling the Raman spectrum of the amorphous-crystal Si system. Journal of Physics C: Solid State Physics, v. 19, n. 8, p. 1113-1122, 1986. Disponível em: http://iopscience.iop.org/article/10.1088/0022-3719/19/8/010/meta Acesso em 26.fev. 2018.https://repositorio.ufrn.br/jspui/handle/123456789/28673https://doi.org/10.1088/0022-3719/19/8/010Institute of Physics (the “Institute”) and IOPscienceIOP PublishingModelagem do espectro Raman do sistema Si-cristal amorfoModelling the raman spectrum of the amorphous- crystal Si systeminfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleA model to calculate the Raman response of small Si crystallites immersed in an amorphous Si matrix is developed. The structure of the system is modelled by an infinite crystalline slab of varying width, in which the atoms on the (111) surfaces on both sides of the slab are attached to Bethe lattices. The Raman response is obtained from a simple polarisability model using the Green function technique. The results are compared with recent experiments. The model can be used for Si crystallites with free and hydrogenated (111) surfaces.engreponame:Repositório Institucional da UFRNinstname:Universidade Federal do Rio Grande do Norte (UFRN)instacron:UFRNinfo:eu-repo/semantics/openAccessLICENSElicense.txtlicense.txttext/plain; charset=utf-81484https://repositorio.ufrn.br/bitstream/123456789/28673/2/license.txte9597aa2854d128fd968be5edc8a28d9MD52TEXTModellingTheRamanSpectrumOfTheAmorphous_1986.pdf.txtModellingTheRamanSpectrumOfTheAmorphous_1986.pdf.txtExtracted texttext/plain23831https://repositorio.ufrn.br/bitstream/123456789/28673/3/ModellingTheRamanSpectrumOfTheAmorphous_1986.pdf.txt768081e15273fada7fa59ef77a24923cMD53THUMBNAILModellingTheRamanSpectrumOfTheAmorphous_1986.pdf.jpgModellingTheRamanSpectrumOfTheAmorphous_1986.pdf.jpgGenerated Thumbnailimage/jpeg1178https://repositorio.ufrn.br/bitstream/123456789/28673/4/ModellingTheRamanSpectrumOfTheAmorphous_1986.pdf.jpgde7c4f654efbad6b6dd8aedd59c145f2MD54123456789/286732022-10-19 19:12:58.281oai:https://repositorio.ufrn.br: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Repositório de PublicaçõesPUBhttp://repositorio.ufrn.br/oai/opendoar:2022-10-19T22:12:58Repositório Institucional da UFRN - Universidade Federal do Rio Grande do Norte (UFRN)false
dc.title.pt_BR.fl_str_mv Modelling the raman spectrum of the amorphous- crystal Si system
title Modelling the raman spectrum of the amorphous- crystal Si system
spellingShingle Modelling the raman spectrum of the amorphous- crystal Si system
Carriço, Artur da Silva
Modelagem do espectro Raman do sistema Si-cristal amorfo
title_short Modelling the raman spectrum of the amorphous- crystal Si system
title_full Modelling the raman spectrum of the amorphous- crystal Si system
title_fullStr Modelling the raman spectrum of the amorphous- crystal Si system
title_full_unstemmed Modelling the raman spectrum of the amorphous- crystal Si system
title_sort Modelling the raman spectrum of the amorphous- crystal Si system
author Carriço, Artur da Silva
author_facet Carriço, Artur da Silva
Barrio, R. A.
Elliot, R. J.
author_role author
author2 Barrio, R. A.
Elliot, R. J.
author2_role author
author
dc.contributor.author.fl_str_mv Carriço, Artur da Silva
Barrio, R. A.
Elliot, R. J.
dc.subject.por.fl_str_mv Modelagem do espectro Raman do sistema Si-cristal amorfo
topic Modelagem do espectro Raman do sistema Si-cristal amorfo
description A model to calculate the Raman response of small Si crystallites immersed in an amorphous Si matrix is developed. The structure of the system is modelled by an infinite crystalline slab of varying width, in which the atoms on the (111) surfaces on both sides of the slab are attached to Bethe lattices. The Raman response is obtained from a simple polarisability model using the Green function technique. The results are compared with recent experiments. The model can be used for Si crystallites with free and hydrogenated (111) surfaces.
publishDate 1986
dc.date.issued.fl_str_mv 1986
dc.date.accessioned.fl_str_mv 2020-03-26T19:33:48Z
dc.date.available.fl_str_mv 2020-03-26T19:33:48Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.citation.fl_str_mv ELLIOT, R J; BARRIO, R. A.; CARRIÇO, Artur da Silva. Modelling the Raman spectrum of the amorphous-crystal Si system. Journal of Physics C: Solid State Physics, v. 19, n. 8, p. 1113-1122, 1986. Disponível em: http://iopscience.iop.org/article/10.1088/0022-3719/19/8/010/meta Acesso em 26.fev. 2018.
dc.identifier.uri.fl_str_mv https://repositorio.ufrn.br/jspui/handle/123456789/28673
dc.identifier.doi.none.fl_str_mv https://doi.org/10.1088/0022-3719/19/8/010
identifier_str_mv ELLIOT, R J; BARRIO, R. A.; CARRIÇO, Artur da Silva. Modelling the Raman spectrum of the amorphous-crystal Si system. Journal of Physics C: Solid State Physics, v. 19, n. 8, p. 1113-1122, 1986. Disponível em: http://iopscience.iop.org/article/10.1088/0022-3719/19/8/010/meta Acesso em 26.fev. 2018.
url https://repositorio.ufrn.br/jspui/handle/123456789/28673
https://doi.org/10.1088/0022-3719/19/8/010
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dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
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dc.publisher.none.fl_str_mv Institute of Physics (the “Institute”) and IOPscience
IOP Publishing
publisher.none.fl_str_mv Institute of Physics (the “Institute”) and IOPscience
IOP Publishing
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