Estudo do tunelamento em junções túnel de CoFeB=MgO=CoFeB
Autor(a) principal: | |
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Data de Publicação: | 2011 |
Tipo de documento: | Dissertação |
Idioma: | por |
Título da fonte: | Repositório Institucional Manancial UFSM |
Texto Completo: | http://repositorio.ufsm.br/handle/1/9213 |
Resumo: | Magnetic tunnel junctions (MTJ) ofCoFeB=MgO=CoFeB and multilayers of (CoFeB=MgO)x3 were produced using the technique of magnetron sputtering, where the insulating film was grown in an atmosphere reactive Ar +O. Multilayers were produced on measures of X-ray difraction and magnetization. Junctions for transport measurements. All curves IxV, nonlinear, were measured at room temperature, and adjustments made using the Simmons model for symmetric barrier. Adjustments were made firt for the positive voltages and then to negative voltages, where the height and thickness of the barrier and the effective area of tunneling was always considered free parameters. Since the effective area of tunneling, much smaller than the area produced during deposition,thus indicating the existence of points where the current tunneling through the barrier,due to fluctuations in the thickness of the insulation. The post was seen exponential growth of the resistance multiplied by the effective area of tunneling as a function of thickness, using only the values calculated from the simulation curves IxV. We also observed the curve of conductance versus voltage, for the investigation of oxidation or not the interface between electrode and barrier, showing that almost 100% of samples of the tunnel junctions was low oxidation of the electrode (positive). |
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2011-10-072011-10-072011-02-25PACE, Rafael Domingues Della. Study of tunneling in Tunnel Junctions CoFeB=MgO=CoFeB. 2011. 68 f. Dissertação (Mestrado em Física) - Universidade Federal de Santa Maria, Santa Maria, 2011.http://repositorio.ufsm.br/handle/1/9213Magnetic tunnel junctions (MTJ) ofCoFeB=MgO=CoFeB and multilayers of (CoFeB=MgO)x3 were produced using the technique of magnetron sputtering, where the insulating film was grown in an atmosphere reactive Ar +O. Multilayers were produced on measures of X-ray difraction and magnetization. Junctions for transport measurements. All curves IxV, nonlinear, were measured at room temperature, and adjustments made using the Simmons model for symmetric barrier. Adjustments were made firt for the positive voltages and then to negative voltages, where the height and thickness of the barrier and the effective area of tunneling was always considered free parameters. Since the effective area of tunneling, much smaller than the area produced during deposition,thus indicating the existence of points where the current tunneling through the barrier,due to fluctuations in the thickness of the insulation. The post was seen exponential growth of the resistance multiplied by the effective area of tunneling as a function of thickness, using only the values calculated from the simulation curves IxV. We also observed the curve of conductance versus voltage, for the investigation of oxidation or not the interface between electrode and barrier, showing that almost 100% of samples of the tunnel junctions was low oxidation of the electrode (positive).Junções túnel magnéticas (MTJ) deCoFeB=MgO=CoFeB e multicamadas deCoFeB=MgO)x3 foram produzidas utilizando a técnica de magnetron sputtering, onde o filme isolante foi crescido em atmosfera reativas, Ar+O. As multicamadas foram produzidas visando medidas de difração de raio-X (XRD) e magnetização. As junções, para medidas de transporte. Todas as curvas IxV, não lineares, foram medidas a temperatura ambiente, e os ajustes realizados utilizando o modelo de Simmons para barreira simétrica. Os ajustes foram realizados primeiro para as tensões positivas e depois para tensões negativas, onde a altura e a espessura da barreira, e a área efetiva de tunelamento foram considerados parâmetros livres sempre. Sendo a área efetiva de tunelamento, muito menor, do que a área produzida durante a deposição, indicando assim a existência de pontos onde a corrente de tunelamento atravessa a barreira, devido a flutuações na espessura do isolante. A posteriori foi verificado o crescimento exponencial da resistência multiplicada pela área efetiva de tunelamento em função da espessura, utilizando somente valores calculados através das simulações das curvas IxV. Também foi verificada a curva de condutância versus a tensão, para a investigação da oxidação ou não da interfase entre eletrodo e barreira, mostrando que quase 100% das amostras das junções túnel ocorreu oxidação do eletrodo de baixo (positivo).Conselho Nacional de Desenvolvimento Científico e Tecnológicoapplication/pdfporUniversidade Federal de Santa MariaPrograma de Pós-Graduação em FísicaUFSMBRFísicaTunelamentoJunções túnel magnéticasSpinTunnellingMagnetic tunnel junctionsSpinCNPQ::CIENCIAS EXATAS E DA TERRA::FISICAEstudo do tunelamento em junções túnel de CoFeB=MgO=CoFeBStudy of tunneling in tunnel junctions CoFeB=MgO=CoFeBinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/masterThesisDorneles, Lucio Strazzaboscohttp://lattes.cnpq.br/7244173039310066Pereira, Luis Gustavohttp://lattes.cnpq.br/4501408216617173Zimmer, Fábio Mallmannhttp://lattes.cnpq.br/6328420212181284http://lattes.cnpq.br/7221188272784351Della Pace, Rafael Domingues100500000006400500500300500e5de4f50-b352-48fb-a699-ffab7b7d8f1d6900e0c4-9fae-4d5d-baa7-165aaeb44c56fc8dd103-77ba-41d7-bb3d-8972cad53654fc60b965-3894-4d02-9c1a-f5e23d827582info:eu-repo/semantics/openAccessreponame:Repositório Institucional Manancial UFSMinstname:Universidade Federal de Santa Maria (UFSM)instacron:UFSMORIGINALDELLA PACE, RAFAEL DOMINGUES.pdfapplication/pdf17530670http://repositorio.ufsm.br/bitstream/1/9213/1/DELLA%20PACE%2c%20RAFAEL%20DOMINGUES.pdff40c10b3b6dc46a8e1d3c2f9781b1d17MD51TEXTDELLA PACE, RAFAEL DOMINGUES.pdf.txtDELLA PACE, RAFAEL DOMINGUES.pdf.txtExtracted texttext/plain95628http://repositorio.ufsm.br/bitstream/1/9213/2/DELLA%20PACE%2c%20RAFAEL%20DOMINGUES.pdf.txta7b4f8a56ec62b2f4b9adf25b4eb164bMD52THUMBNAILDELLA PACE, RAFAEL DOMINGUES.pdf.jpgDELLA PACE, RAFAEL DOMINGUES.pdf.jpgIM Thumbnailimage/jpeg4568http://repositorio.ufsm.br/bitstream/1/9213/3/DELLA%20PACE%2c%20RAFAEL%20DOMINGUES.pdf.jpg9e1c3ee78e5ac7c55d1b6b727ae4ef15MD531/92132022-01-06 09:34:25.045oai:repositorio.ufsm.br:1/9213Repositório Institucionalhttp://repositorio.ufsm.br/PUBhttp://repositorio.ufsm.br/oai/requestouvidoria@ufsm.bropendoar:39132022-01-06T12:34:25Repositório Institucional Manancial UFSM - Universidade Federal de Santa Maria (UFSM)false |
dc.title.por.fl_str_mv |
Estudo do tunelamento em junções túnel de CoFeB=MgO=CoFeB |
dc.title.alternative.eng.fl_str_mv |
Study of tunneling in tunnel junctions CoFeB=MgO=CoFeB |
title |
Estudo do tunelamento em junções túnel de CoFeB=MgO=CoFeB |
spellingShingle |
Estudo do tunelamento em junções túnel de CoFeB=MgO=CoFeB Della Pace, Rafael Domingues Tunelamento Junções túnel magnéticas Spin Tunnelling Magnetic tunnel junctions Spin CNPQ::CIENCIAS EXATAS E DA TERRA::FISICA |
title_short |
Estudo do tunelamento em junções túnel de CoFeB=MgO=CoFeB |
title_full |
Estudo do tunelamento em junções túnel de CoFeB=MgO=CoFeB |
title_fullStr |
Estudo do tunelamento em junções túnel de CoFeB=MgO=CoFeB |
title_full_unstemmed |
Estudo do tunelamento em junções túnel de CoFeB=MgO=CoFeB |
title_sort |
Estudo do tunelamento em junções túnel de CoFeB=MgO=CoFeB |
author |
Della Pace, Rafael Domingues |
author_facet |
Della Pace, Rafael Domingues |
author_role |
author |
dc.contributor.advisor1.fl_str_mv |
Dorneles, Lucio Strazzabosco |
dc.contributor.advisor1Lattes.fl_str_mv |
http://lattes.cnpq.br/7244173039310066 |
dc.contributor.referee1.fl_str_mv |
Pereira, Luis Gustavo |
dc.contributor.referee1Lattes.fl_str_mv |
http://lattes.cnpq.br/4501408216617173 |
dc.contributor.referee2.fl_str_mv |
Zimmer, Fábio Mallmann |
dc.contributor.referee2Lattes.fl_str_mv |
http://lattes.cnpq.br/6328420212181284 |
dc.contributor.authorLattes.fl_str_mv |
http://lattes.cnpq.br/7221188272784351 |
dc.contributor.author.fl_str_mv |
Della Pace, Rafael Domingues |
contributor_str_mv |
Dorneles, Lucio Strazzabosco Pereira, Luis Gustavo Zimmer, Fábio Mallmann |
dc.subject.por.fl_str_mv |
Tunelamento Junções túnel magnéticas Spin |
topic |
Tunelamento Junções túnel magnéticas Spin Tunnelling Magnetic tunnel junctions Spin CNPQ::CIENCIAS EXATAS E DA TERRA::FISICA |
dc.subject.eng.fl_str_mv |
Tunnelling Magnetic tunnel junctions Spin |
dc.subject.cnpq.fl_str_mv |
CNPQ::CIENCIAS EXATAS E DA TERRA::FISICA |
description |
Magnetic tunnel junctions (MTJ) ofCoFeB=MgO=CoFeB and multilayers of (CoFeB=MgO)x3 were produced using the technique of magnetron sputtering, where the insulating film was grown in an atmosphere reactive Ar +O. Multilayers were produced on measures of X-ray difraction and magnetization. Junctions for transport measurements. All curves IxV, nonlinear, were measured at room temperature, and adjustments made using the Simmons model for symmetric barrier. Adjustments were made firt for the positive voltages and then to negative voltages, where the height and thickness of the barrier and the effective area of tunneling was always considered free parameters. Since the effective area of tunneling, much smaller than the area produced during deposition,thus indicating the existence of points where the current tunneling through the barrier,due to fluctuations in the thickness of the insulation. The post was seen exponential growth of the resistance multiplied by the effective area of tunneling as a function of thickness, using only the values calculated from the simulation curves IxV. We also observed the curve of conductance versus voltage, for the investigation of oxidation or not the interface between electrode and barrier, showing that almost 100% of samples of the tunnel junctions was low oxidation of the electrode (positive). |
publishDate |
2011 |
dc.date.accessioned.fl_str_mv |
2011-10-07 |
dc.date.available.fl_str_mv |
2011-10-07 |
dc.date.issued.fl_str_mv |
2011-02-25 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/masterThesis |
format |
masterThesis |
status_str |
publishedVersion |
dc.identifier.citation.fl_str_mv |
PACE, Rafael Domingues Della. Study of tunneling in Tunnel Junctions CoFeB=MgO=CoFeB. 2011. 68 f. Dissertação (Mestrado em Física) - Universidade Federal de Santa Maria, Santa Maria, 2011. |
dc.identifier.uri.fl_str_mv |
http://repositorio.ufsm.br/handle/1/9213 |
identifier_str_mv |
PACE, Rafael Domingues Della. Study of tunneling in Tunnel Junctions CoFeB=MgO=CoFeB. 2011. 68 f. Dissertação (Mestrado em Física) - Universidade Federal de Santa Maria, Santa Maria, 2011. |
url |
http://repositorio.ufsm.br/handle/1/9213 |
dc.language.iso.fl_str_mv |
por |
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por |
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100500000006 |
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info:eu-repo/semantics/openAccess |
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openAccess |
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dc.publisher.none.fl_str_mv |
Universidade Federal de Santa Maria |
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Programa de Pós-Graduação em Física |
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UFSM |
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BR |
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Física |
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Universidade Federal de Santa Maria |
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