Theoretical study of the influence of vacancies in the magnetic stability of V-, Cr-, and Mn-doped SnO2
Autor(a) principal: | |
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Data de Publicação: | 2013 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | LOCUS Repositório Institucional da UFV |
Texto Completo: | https://doi.org/10.1016/j.apsusc.2012.08.096 http://www.locus.ufv.br/handle/123456789/21374 |
Resumo: | In this work we study, theoretically, the magnetic properties of transition metals (TMs)-doped SnO2 (with TM = V, Cr, and Mn) in a diluted magnetic oxide configuration, focusing in particular in the role played by the presence of O vacancies, VO, nearby the TM. We present the results of first-principles electronic structure calculations of Sn0.96TM0.04O2 and Sn0.96TM0.04O1.98(VO)0.02 alloys. The calculated total energy as a function of the total magnetic moment per cell shows a magnetic metastability, corresponding to a high-spin (HS) ground state, respectively, with 2 and 3 μB/cell, for Cr and Mn, and a metastable low-spin (LS) state, with 0 (Cr) and 1 (Mn) μB/cell. For vanadium, only a state with 1 μB/cell was found. The spin-crossover energy (ESCO) from the LS to the HS is 114 meV for Cr and 42 meV for Mn. By creating O vacancies close to the TM site, we show that the metastability and ESCO change. For chromium, a new HS state appears (4 μB/cell), with an energy barrier of 32 meV relative to the 2 μB/cell state. For manganese, the metastable LS state of 1 μB/cell disappears, while for vanadium the HS state of 1 μB/cell remains. In all cases, the ground state corresponds to the expected HS. These findings suggest that these materials may be used in applications that require different magnetization states. |
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Borges, Pablo D.Scolfaro, Luisa M.R.Alves, Horácio W. LeiteSilva Jr., Eronides F. daAssali, Lucy V.C.2018-08-23T12:27:44Z2018-08-23T12:27:44Z2013-02-1501694332https://doi.org/10.1016/j.apsusc.2012.08.096http://www.locus.ufv.br/handle/123456789/21374In this work we study, theoretically, the magnetic properties of transition metals (TMs)-doped SnO2 (with TM = V, Cr, and Mn) in a diluted magnetic oxide configuration, focusing in particular in the role played by the presence of O vacancies, VO, nearby the TM. We present the results of first-principles electronic structure calculations of Sn0.96TM0.04O2 and Sn0.96TM0.04O1.98(VO)0.02 alloys. The calculated total energy as a function of the total magnetic moment per cell shows a magnetic metastability, corresponding to a high-spin (HS) ground state, respectively, with 2 and 3 μB/cell, for Cr and Mn, and a metastable low-spin (LS) state, with 0 (Cr) and 1 (Mn) μB/cell. For vanadium, only a state with 1 μB/cell was found. The spin-crossover energy (ESCO) from the LS to the HS is 114 meV for Cr and 42 meV for Mn. By creating O vacancies close to the TM site, we show that the metastability and ESCO change. For chromium, a new HS state appears (4 μB/cell), with an energy barrier of 32 meV relative to the 2 μB/cell state. For manganese, the metastable LS state of 1 μB/cell disappears, while for vanadium the HS state of 1 μB/cell remains. In all cases, the ground state corresponds to the expected HS. These findings suggest that these materials may be used in applications that require different magnetization states.engApplied Surface Sciencev. 267, p. 115- 118, february 2013Elsevier B.V.info:eu-repo/semantics/openAccessDilute magnetic semiconductorMagnetic metastabilitySpintronicsTin dioxideSpin-crossoverTheoretical study of the influence of vacancies in the magnetic stability of V-, Cr-, and Mn-doped SnO2info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfreponame:LOCUS Repositório Institucional da UFVinstname:Universidade Federal de Viçosa (UFV)instacron:UFVORIGINALartigo.pdfartigo.pdfTexto completoapplication/pdf545861https://locus.ufv.br//bitstream/123456789/21374/1/artigo.pdfc1948768d9662b66538e2b4319b1dc80MD51LICENSElicense.txtlicense.txttext/plain; charset=utf-81748https://locus.ufv.br//bitstream/123456789/21374/2/license.txt8a4605be74aa9ea9d79846c1fba20a33MD52THUMBNAILartigo.pdf.jpgartigo.pdf.jpgIM Thumbnailimage/jpeg5166https://locus.ufv.br//bitstream/123456789/21374/3/artigo.pdf.jpgac975cd7dd5e2bd8d80cd04b5df81e5dMD53123456789/213742018-08-23 23:00:58.095oai:locus.ufv.br:123456789/21374Tk9URTogUExBQ0UgWU9VUiBPV04gTElDRU5TRSBIRVJFClRoaXMgc2FtcGxlIGxpY2Vuc2UgaXMgcHJvdmlkZWQgZm9yIGluZm9ybWF0aW9uYWwgcHVycG9zZXMgb25seS4KCk5PTi1FWENMVVNJVkUgRElTVFJJQlVUSU9OIExJQ0VOU0UKCkJ5IHNpZ25pbmcgYW5kIHN1Ym1pdHRpbmcgdGhpcyBsaWNlbnNlLCB5b3UgKHRoZSBhdXRob3Iocykgb3IgY29weXJpZ2h0Cm93bmVyKSBncmFudHMgdG8gRFNwYWNlIFVuaXZlcnNpdHkgKERTVSkgdGhlIG5vbi1leGNsdXNpdmUgcmlnaHQgdG8gcmVwcm9kdWNlLAp0cmFuc2xhdGUgKGFzIGRlZmluZWQgYmVsb3cpLCBhbmQvb3IgZGlzdHJpYnV0ZSB5b3VyIHN1Ym1pc3Npb24gKGluY2x1ZGluZwp0aGUgYWJzdHJhY3QpIHdvcmxkd2lkZSBpbiBwcmludCBhbmQgZWxlY3Ryb25pYyBmb3JtYXQgYW5kIGluIGFueSBtZWRpdW0sCmluY2x1ZGluZyBidXQgbm90IGxpbWl0ZWQgdG8gYXVkaW8gb3IgdmlkZW8uCgpZb3UgYWdyZWUgdGhhdCBEU1UgbWF5LCB3aXRob3V0IGNoYW5naW5nIHRoZSBjb250ZW50LCB0cmFuc2xhdGUgdGhlCnN1Ym1pc3Npb24gdG8gYW55IG1lZGl1bSBvciBmb3JtYXQgZm9yIHRoZSBwdXJwb3NlIG9mIHByZXNlcnZhdGlvbi4KCllvdSBhbHNvIGFncmVlIHRoYXQgRFNVIG1heSBrZWVwIG1vcmUgdGhhbiBvbmUgY29weSBvZiB0aGlzIHN1Ym1pc3Npb24gZm9yCnB1cnBvc2VzIG9mIHNlY3VyaXR5LCBiYWNrLXVwIGFuZCBwcmVzZXJ2YXRpb24uCgpZb3UgcmVwcmVzZW50IHRoYXQgdGhlIHN1Ym1pc3Npb24gaXMgeW91ciBvcmlnaW5hbCB3b3JrLCBhbmQgdGhhdCB5b3UgaGF2ZQp0aGUgcmlnaHQgdG8gZ3JhbnQgdGhlIHJpZ2h0cyBjb250YWluZWQgaW4gdGhpcyBsaWNlbnNlLiBZb3UgYWxzbyByZXByZXNlbnQKdGhhdCB5b3VyIHN1Ym1pc3Npb24gZG9lcyBub3QsIHRvIHRoZSBiZXN0IG9mIHlvdXIga25vd2xlZGdlLCBpbmZyaW5nZSB1cG9uCmFueW9uZSdzIGNvcHlyaWdodC4KCklmIHRoZSBzdWJtaXNzaW9uIGNvbnRhaW5zIG1hdGVyaWFsIGZvciB3aGljaCB5b3UgZG8gbm90IGhvbGQgY29weXJpZ2h0LAp5b3UgcmVwcmVzZW50IHRoYXQgeW91IGhhdmUgb2J0YWluZWQgdGhlIHVucmVzdHJpY3RlZCBwZXJtaXNzaW9uIG9mIHRoZQpjb3B5cmlnaHQgb3duZXIgdG8gZ3JhbnQgRFNVIHRoZSByaWdodHMgcmVxdWlyZWQgYnkgdGhpcyBsaWNlbnNlLCBhbmQgdGhhdApzdWNoIHRoaXJkLXBhcnR5IG93bmVkIG1hdGVyaWFsIGlzIGNsZWFybHkgaWRlbnRpZmllZCBhbmQgYWNrbm93bGVkZ2VkCndpdGhpbiB0aGUgdGV4dCBvciBjb250ZW50IG9mIHRoZSBzdWJtaXNzaW9uLgoKSUYgVEhFIFNVQk1JU1NJT04gSVMgQkFTRUQgVVBPTiBXT1JLIFRIQVQgSEFTIEJFRU4gU1BPTlNPUkVEIE9SIFNVUFBPUlRFRApCWSBBTiBBR0VOQ1kgT1IgT1JHQU5JWkFUSU9OIE9USEVSIFRIQU4gRFNVLCBZT1UgUkVQUkVTRU5UIFRIQVQgWU9VIEhBVkUKRlVMRklMTEVEIEFOWSBSSUdIVCBPRiBSRVZJRVcgT1IgT1RIRVIgT0JMSUdBVElPTlMgUkVRVUlSRUQgQlkgU1VDSApDT05UUkFDVCBPUiBBR1JFRU1FTlQuCgpEU1Ugd2lsbCBjbGVhcmx5IGlkZW50aWZ5IHlvdXIgbmFtZShzKSBhcyB0aGUgYXV0aG9yKHMpIG9yIG93bmVyKHMpIG9mIHRoZQpzdWJtaXNzaW9uLCBhbmQgd2lsbCBub3QgbWFrZSBhbnkgYWx0ZXJhdGlvbiwgb3RoZXIgdGhhbiBhcyBhbGxvd2VkIGJ5IHRoaXMKbGljZW5zZSwgdG8geW91ciBzdWJtaXNzaW9uLgo=Repositório InstitucionalPUBhttps://www.locus.ufv.br/oai/requestfabiojreis@ufv.bropendoar:21452018-08-24T02:00:58LOCUS Repositório Institucional da UFV - Universidade Federal de Viçosa (UFV)false |
dc.title.en.fl_str_mv |
Theoretical study of the influence of vacancies in the magnetic stability of V-, Cr-, and Mn-doped SnO2 |
title |
Theoretical study of the influence of vacancies in the magnetic stability of V-, Cr-, and Mn-doped SnO2 |
spellingShingle |
Theoretical study of the influence of vacancies in the magnetic stability of V-, Cr-, and Mn-doped SnO2 Borges, Pablo D. Dilute magnetic semiconductor Magnetic metastability Spintronics Tin dioxide Spin-crossover |
title_short |
Theoretical study of the influence of vacancies in the magnetic stability of V-, Cr-, and Mn-doped SnO2 |
title_full |
Theoretical study of the influence of vacancies in the magnetic stability of V-, Cr-, and Mn-doped SnO2 |
title_fullStr |
Theoretical study of the influence of vacancies in the magnetic stability of V-, Cr-, and Mn-doped SnO2 |
title_full_unstemmed |
Theoretical study of the influence of vacancies in the magnetic stability of V-, Cr-, and Mn-doped SnO2 |
title_sort |
Theoretical study of the influence of vacancies in the magnetic stability of V-, Cr-, and Mn-doped SnO2 |
author |
Borges, Pablo D. |
author_facet |
Borges, Pablo D. Scolfaro, Luisa M.R. Alves, Horácio W. Leite Silva Jr., Eronides F. da Assali, Lucy V.C. |
author_role |
author |
author2 |
Scolfaro, Luisa M.R. Alves, Horácio W. Leite Silva Jr., Eronides F. da Assali, Lucy V.C. |
author2_role |
author author author author |
dc.contributor.author.fl_str_mv |
Borges, Pablo D. Scolfaro, Luisa M.R. Alves, Horácio W. Leite Silva Jr., Eronides F. da Assali, Lucy V.C. |
dc.subject.pt-BR.fl_str_mv |
Dilute magnetic semiconductor Magnetic metastability Spintronics Tin dioxide Spin-crossover |
topic |
Dilute magnetic semiconductor Magnetic metastability Spintronics Tin dioxide Spin-crossover |
description |
In this work we study, theoretically, the magnetic properties of transition metals (TMs)-doped SnO2 (with TM = V, Cr, and Mn) in a diluted magnetic oxide configuration, focusing in particular in the role played by the presence of O vacancies, VO, nearby the TM. We present the results of first-principles electronic structure calculations of Sn0.96TM0.04O2 and Sn0.96TM0.04O1.98(VO)0.02 alloys. The calculated total energy as a function of the total magnetic moment per cell shows a magnetic metastability, corresponding to a high-spin (HS) ground state, respectively, with 2 and 3 μB/cell, for Cr and Mn, and a metastable low-spin (LS) state, with 0 (Cr) and 1 (Mn) μB/cell. For vanadium, only a state with 1 μB/cell was found. The spin-crossover energy (ESCO) from the LS to the HS is 114 meV for Cr and 42 meV for Mn. By creating O vacancies close to the TM site, we show that the metastability and ESCO change. For chromium, a new HS state appears (4 μB/cell), with an energy barrier of 32 meV relative to the 2 μB/cell state. For manganese, the metastable LS state of 1 μB/cell disappears, while for vanadium the HS state of 1 μB/cell remains. In all cases, the ground state corresponds to the expected HS. These findings suggest that these materials may be used in applications that require different magnetization states. |
publishDate |
2013 |
dc.date.issued.fl_str_mv |
2013-02-15 |
dc.date.accessioned.fl_str_mv |
2018-08-23T12:27:44Z |
dc.date.available.fl_str_mv |
2018-08-23T12:27:44Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
https://doi.org/10.1016/j.apsusc.2012.08.096 http://www.locus.ufv.br/handle/123456789/21374 |
dc.identifier.issn.none.fl_str_mv |
01694332 |
identifier_str_mv |
01694332 |
url |
https://doi.org/10.1016/j.apsusc.2012.08.096 http://www.locus.ufv.br/handle/123456789/21374 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartofseries.pt-BR.fl_str_mv |
v. 267, p. 115- 118, february 2013 |
dc.rights.driver.fl_str_mv |
Elsevier B.V. info:eu-repo/semantics/openAccess |
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Elsevier B.V. |
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openAccess |
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dc.publisher.none.fl_str_mv |
Applied Surface Science |
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Applied Surface Science |
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