Magnetotunneling spectroscopy of a biased triple-barrier semiconductor heterostructure

• Autor(a) principal: Velásquez, Rober
• Data de Publicação: 2006
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: LOCUS Repositório Institucional da UFV
• Texto Completo: https://doi.org/10.1016/j.spmi.2005.12.002; http://www.locus.ufv.br/handle/123456789/22242
• topic: Magnetotunneling spectroscopy; Resonant tunneling; Superlattice

In this work we describe a magnetotunneling spectroscopy technique for probing the localization degree of two-dimensional states and mapping the subbands in the active region of a resonant-tunneling semiconductor heterostructure. The reported experimental data consist of the low-temperature tunneling current traces of an asymmetric triple-barrier structure measured by sweeping an in-plane magnetic field up to 10 T. According to our interpretation model, the main features observed in the tunnel current traces are due to the field-induced resonant transitions between two-dimensional states at the crossing region between dispersion curves. The data reveals the highly localized nature of the quantum states in an asymmetric double-quantum-well structure even for those with very narrow middle barriers.