Crescimento e caracterização de pontos quânticos de CdMnTe

• Autor(a) principal: Lage, Marielle Hoalle Moreira Benevides
• Data de Publicação: 2013
• Tipo de documento: Dissertação
• Idioma: por
• Título da fonte: LOCUS Repositório Institucional da UFV
• Texto Completo: http://locus.ufv.br/handle/123456789/4269
• topic: Epitaxia; Semicondutores; Manganês; Silício; Microscopia de força atômica; Raios X - Difração; Epitaxy; Semiconductors; Manganese; Silicon; Atomic force microscopy; X - Rays; CNPQ::CIENCIAS EXATAS E DA TERRA::FISICA::FISICA DA MATERIA CONDENSADA

In the last decade, the growth of quantum dots has been studied with great interest in order to learn more about the basic physics of zero dimensional confinement and also due to their application in optoelectronic devices. The quantum dot energy levels can be controlled by changing the size, shape and material used, therefore its morphology plays an important role in determination of optical and electronic properties. In this study we used the molecular beam epitaxial technique (MBE) for producing CdMnTe quantum dots on silicon (111) substrates. To produce the samples, substrate temperature, growth time and manganese concentration were varied. The morphological and structural properties of the samples were analyzed by Atomic Force Microscopy (AFM) at the Laboratório Nacional de Nanotecnologia and by x- ray diffraction using the XRD2 beam line of the Laboratório Nacional de Luz Síncrontron (LNLS), in Campinas. The results showed that the substrate temperature influences the size dispersion of the islands, the growth time changes the size and the quality and the concentration of manganese affects mainly the quality of the quantum dots.